公开(公告)号：US5572071A

公开(公告)日：1996-11-05

申请号：US476738

申请日：1995-06-07

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: H01L21/285 ,  H01L21/441 ,  H01L21/48 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41 ,  H01L29/43

CPC classification number: H01L21/76838 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

Abstract: The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.

公开(公告)号：US08871628B2

公开(公告)日：2014-10-28

申请号：US12689927

申请日：2010-01-19

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L29/22 ,  H01L21/02 ,  H01L31/0224 ,  H01L31/078 ,  H01L31/18 ,  H01L31/075

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1884 ,  Y02E10/50

Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor can be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

Abstract translation: 电极结构包括包含n型半导体层和p型半导体层的半导体结; p型半导体层上的空穴除外层; 以及在透孔层上的透明电极层。 所述电极结构还包括在所述孔除硅层和所述透明电极层之间的导电层。 在电极结构中，可以通过原子层沉积形成空穴除外层，导电层和透明电极层中的一个或多个。 在电极结构中，由退化的n型氧化物半导体形成的透明电极不与p型半导体直接接触，因此可以减少在p型半导体中产生的空穴的湮灭或复合，其中 提高载波生成效率。 此外，通过导电层增加透明电极的导电性，这改善了器件的电特性。

公开(公告)号：US08840958B2

公开(公告)日：2014-09-23

申请号：US13368265

申请日：2012-02-07

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/45548 ,  C23C16/403 ,  C23C16/4412

Abstract: Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.

Abstract translation: 使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。 源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。 然后将反应物前体经由与第一通道分开的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分开的第二排气部分排出。 在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

公开(公告)号：US08771791B2

公开(公告)日：2014-07-08

申请号：US13273076

申请日：2011-10-13

Applicant: Sang In Lee ,  Chang Wan Hwang

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/00 ,  C23C16/40

CPC classification number: C23C16/45551 ,  C23C16/403 ,  C23C16/45536

Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Abstract translation: 通过使感受器沿两个方向往复移动来进行原子层沉积，对基座上的基底进行两个不同的处理顺序。 通过对基座进行不同的工艺顺序，衬底经历不同的工艺，否则将需要额外的一组注射器或反应器。 减少注射器或反应器的数量使得能够实现更紧凑的沉积装置，并降低与沉积装置相关的成本。

公开(公告)号：US20140027777A1

公开(公告)日：2014-01-30

申请号：US13560881

申请日：2012-07-27

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/20 ,  C30B25/18 ,  C30B25/02

CPC classification number: C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/267

Abstract: Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer.

Abstract translation: 实施例涉及在多孔硅（Si）衬底上生长外延氮化镓（GaN）层。 与非多孔Si衬底相比，多孔Si衬底具有更大的表面积，以分配和适应由沉积在衬底上的材料引起的应力。 在多孔硅衬底上形成界面调整层（例如，过渡金属硅化物层），以促进缓冲层的生长。 然后可以在硅衬底上形成用于GaN层的缓冲层。 然后在缓冲层上形成用于GaN层外延生长的晶种层。

公开(公告)号：US20130023172A1

公开(公告)日：2013-01-24

申请号：US13536646

申请日：2012-06-28

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B32B5/02 ,  C23C16/56 ,  C23C16/50 ,  C23C16/44

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在含纤维或含纤维材料的一层或多层材料上沉积以提供或增强纤维或含纤维材料的功能性。 这样的功能包括例如较高的刚性，较高的强度，耐弯曲性，增加抗冲击性或增加抗纤维或含纤维材料的张力。 将一层材料沉积在纤维或含纤维材料上，然后材料的表面被氧化，硝化或碳化以增加材料的体积。 通过增加材料的体积，材料承受压应力。 压缩应力使纤维或含纤维材料更加坚固，更坚固，更抗弯曲力，冲击力或拉力。

公开(公告)号：US20130022658A1

公开(公告)日：2013-01-24

申请号：US13535155

申请日：2012-06-27

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50 ,  C23C16/02 ,  A01P1/00 ,  A01N25/08 ,  A01N59/16

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing a layer of antimicrobial material such as silver on a permeable substrate using atomic layer deposition (ALD). A deposition device includes two injectors that inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate that passes between the injectors. Part of the gas injected by an injector penetrates the permeable substrate and is discharged by the other injector. The remaining gas injected by the injector moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same injector. While penetrating the substrate or moving in parallel to the surface, the source precursor or the reactant precursor becomes absorbed on the substrate or react with precursor already present on the substrate to deposit the antimicrobial material on the substrate.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在可渗透基底上沉积诸如银的抗微生物材料层。 沉积装置包括将源前体，反应物前体，吹扫气体或其组合注入到在喷射器之间通过的可渗透基底上的两个喷射器。 由喷射器喷射的气体的一部分穿透可渗透基底并被另一个喷射器排出。 由喷射器喷射的剩余气体平行于可渗透基板的表面移动，并经由形成在同一喷射器上的排气部排出。 当穿透基底或平行于表面移动时，源前体或反应物前体被吸收到基底上或与已经存在于基底上的前体反应以将抗微生物材料沉积在基底上。

公开(公告)号：US08351858B2

公开(公告)日：2013-01-08

申请号：US12506387

申请日：2009-07-21

Applicant: Yong-Ho Lee ,  Sang-In Lee ,  Eun-Chul Kim ,  Kyoung-Han Lee

Inventor： Yong-Ho Lee ,  Sang-In Lee ,  Eun-Chul Kim ,  Kyoung-Han Lee

IPC: H04B7/00

CPC classification number: H04W8/005 ,  H04W84/18

Abstract: An apparatus and method for obtaining information on Bluetooth devices in a computing device using Bluetooth are provided. The method includes, if an Inquiry Response (IR) packet is received as a response to an inquiry packet, obtaining information on a first Bluetooth device transmitting the IR packet and determining whether a supplementary response indication field is enabled and, if the supplementary response indication field is enabled, receiving an Extended Inquiry Response (EIR) packet, and obtaining information on at least one Bluetooth device other than the first Bluetooth device through the EIR packet.

Abstract translation: 提供了一种使用蓝牙在计算设备中获取关于蓝牙设备的信息的设备和方法。 该方法包括如果接收到询问响应（IR）分组作为对查询分组的响应，则获取关于发送IR分组的第一蓝牙设备的信息，并确定辅助应答指示字段是否被启用，以及如果辅助响应指示 字段被启用，接收扩展查询响应（EIR）分组，以及通过EIR分组获得除了第一蓝牙设备之外的至少一个蓝牙设备的信息。

公开(公告)号：US20120207926A1

公开(公告)日：2012-08-16

申请号：US13368265

申请日：2012-02-07

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/40

CPC classification number: C23C16/45548 ,  C23C16/403 ,  C23C16/4412

Abstract: Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.

Abstract translation: 使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。 源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。 然后将反应物前体经由与第一通道分开的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分开的第二排气部分排出。 在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

公开(公告)号：US20100310771A1

公开(公告)日：2010-12-09

申请号：US12794209

申请日：2010-06-04

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  C23C16/00

CPC classification number: C23C16/45551 ,  C01B21/076 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括至少一个用于将反应材料注入到蒸镀反应器的第一部分中的凹部的第一注射部分。 第二部分连接到第一空间并且具有连接到第一部分的凹部的凹部。 第二部分的凹部被保持为具有低于第一空间中的压力的​​压力。 第三部分连接到第二空间，并且排气部分连接到第三空间。