公开(公告)号：US08673673B2

公开(公告)日：2014-03-18

申请号：US13872961

申请日：2013-04-29

Applicant: Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

Inventor： Denis De Ceuster ,  Peter John Cousins ,  David D. Smith

IPC: H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

Abstract translation: 太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。 中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。 除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

公开(公告)号：US08586403B2

公开(公告)日：2013-11-19

申请号：US13028059

申请日：2011-02-15

Applicant: Gabriel Harley ,  David D. Smith ,  Tim Dennis ,  Ann Waldhauer ,  Taeseok Kim ,  Peter John Cousins

Inventor： Gabriel Harley ,  David D. Smith ,  Tim Dennis ,  Ann Waldhauer ,  Taeseok Kim ,  Peter John Cousins

IPC: H01L21/00

CPC classification number: H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Abstract translation: 通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。 通过用具有基本上均匀的厚度的膜代替在扩散区上形成的膜来促进使用激光来形成接触孔。 接触孔可以形成到深扩散区域，以增加激光烧蚀过程边缘。 可以调整激光器配置以通过不同厚度的介电膜形成接触孔。

公开(公告)号：US08580599B2

公开(公告)日：2013-11-12

申请号：US13371241

申请日：2012-02-10

Applicant: Seung Bum Rim ,  Taeseok Kim ,  David D. Smith ,  Peter J. Cousins

Inventor： Seung Bum Rim ,  Taeseok Kim ,  David D. Smith ,  Peter J. Cousins

IPC: H01L21/02

CPC classification number: H01L29/861 ,  H01L31/022441 ,  H01L31/0443 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Methods of fabricating bypass diodes for solar cells are described. In one embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

Abstract translation: 描述了制造用于太阳能电池的旁路二极管的方法。 在一个实施例中，一种方法包括在太阳能电池的衬底上形成第一导电类型的第一导电区域。 第二导电类型的第二导电区形成在第一导电区上。 在另一个实施例中，一种方法包括在太阳能电池的衬底上形成第一导电类型的第一导电区域。 第二导电类型的第二导电区域形成在第一导电区域的最上部并由第一导电区域的最上部包围，但不形成在第一导电区域的最下部。

公开(公告)号：US08399287B1

公开(公告)日：2013-03-19

申请号：US13013628

申请日：2011-01-25

Applicant: William P. Mulligan ,  Michael J. Cudzinovic ,  Thomas Pass ,  David D. Smith ,  Neil Kaminar ,  Keith McIntosh ,  Richard M. Swanson

Inventor： William P. Mulligan ,  Michael J. Cudzinovic ,  Thomas Pass ,  David D. Smith ,  Neil Kaminar ,  Keith McIntosh ,  Richard M. Swanson

IPC: H01L21/00

CPC classification number: H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an IR reflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.

Abstract translation: 使用比微电子电路处理便宜的处理技术容易地制造的太阳能电池。 在优选实施例中，打印技术用于选择性地形成用于蚀刻氧化硅和扩散掺杂剂以及形成向扩散区域的金属接触的掩模。 在优选实施例中，通过使用掩模和蚀刻技术，在晶片的表面中交替地形成p掺杂区域和n掺杂区域。 通过首先形成包含与硅接触的第一层（例如铝）并用作红外反射器的第二层，作为扩散阻挡的第二层这样的钛钨，首先形成种子层堆叠，从而对p区和n区进行金属接触，以及 第三层起镀层的作用。 然后将诸如铜的厚导电层电镀在种子层上，并且移除电镀线之间的种子层。 晶片的前表面优选通过蚀刻或机械磨蚀而被纹理化，其中IR反射层设置在纹理表面上。 可以在纹理化表面中提供场层，其组合效果是非常低的表面复合速度。

公开(公告)号：US20120266951A1

公开(公告)日：2012-10-25

申请号：US13372235

申请日：2012-02-13

Applicant: Bo Li ,  Peter J. Cousins ,  David D. Smith

Inventor： Bo Li ,  Peter J. Cousins ,  David D. Smith

IPC: H01L31/0236 ,  H01L31/04

CPC classification number: H01L31/1864 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.

Abstract translation: 描述了形成用于背接触太阳能电池的发射器的方法。 在一个实施例中，一种方法包括在衬底上形成第一固态掺杂剂源。 第一固态掺杂剂源包括由间隙分开的多个区域。 通过印刷在基板的上方形成第二固态掺杂剂源的区域。

公开(公告)号：US20110284986A1

公开(公告)日：2011-11-24

申请号：US12967976

申请日：2010-12-14

Applicant: Seung Bum Rim ,  Taeseok Kim ,  David D. Smith ,  Peter J. Cousins

Inventor： Seung Bum Rim ,  Taeseok Kim ,  David D. Smith ,  Peter J. Cousins

IPC: H01L29/861 ,  H01L21/329

CPC classification number: H01L29/861 ,  H01L31/022441 ,  H01L31/0443 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

Abstract translation: 描述了用于太阳能电池的旁路二极管。 在一个实施例中，用于太阳能电池的旁路二极管包括太阳能电池的衬底。 第一导电区域设置在衬底上方，第一导电类型的第一导电区域。 第二导电区域设置在第一导电区域上，第二导电区域具有与第一导电类型相反的第二导电类型。

公开(公告)号：US07812250B2

公开(公告)日：2010-10-12

申请号：US12431684

申请日：2009-04-28

Applicant: David D. Smith

Inventor： David D. Smith

IPC: H01L31/00

CPC classification number: H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

Abstract translation: 太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。 沟槽结构将P型掺杂区域与N型掺杂区域分离。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。 沟槽结构可以包括用于增加太阳辐射收集的纹理表面。 除了其它优点之外，所得到的结构通过在相邻的P型和N型掺杂区域之间提供隔离来提高效率，从而防止在掺杂区域将被触摸的空间电荷区域中的复合。

公开(公告)号：US07786375B2

公开(公告)日：2010-08-31

申请号：US12477796

申请日：2009-06-03

Applicant: Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

Inventor： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC: H03H5/10 ,  H01L31/00

CPC classification number: H02S40/32 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/18 ,  H02J3/383 ,  H02J3/46 ,  H02S30/10 ,  H02S40/36 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52 ,  Y02E10/547 ,  Y10T29/49117

Abstract: In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

Abstract translation: 在一个实施例中，通过提供将电荷从太阳能电池的正面向电池片散出的导电路径来防止或最小化有害的太阳能电池极化。 导电路径可以包括例如在抗反射涂层的顶表面或底表面上形成的电介质钝化层中的图案化孔，导电抗反射涂层或导电材料层。 也可以通过偏置太阳能电池正面上的太阳能电池模块的区域来防止有害的太阳能电池极化。

公开(公告)号：US07242487B2

公开(公告)日：2007-07-10

申请号：US08869244

申请日：1997-06-04

Applicant: Jeanne M. Lucivero ,  David D. Smith ,  Frank P. White ,  Robert G. Boyle

Inventor： Jeanne M. Lucivero ,  David D. Smith ,  Frank P. White ,  Robert G. Boyle

IPC: G06F13/00 ,  G06F3/12 ,  G06K15/02

CPC classification number: G06F3/1296 ,  B41B19/00 ,  H04N1/00236 ,  H04N1/00238 ,  H04N2201/0067

Abstract: A system and method for processing raster data including at least one input computer terminal for creating postscript data, at least one raster image processor (RIP), for processing the postscript data into raster data, and a PrintDrive system for managing and controlling the workflow of image files containing raster image data to a plurality of user selectable output devices.

Abstract translation: 一种用于处理包括用于创建后记数据的至少一个输入计算机终端的光栅数据的系统和方法，用于将后记数据处理为光栅数据的至少一个光栅图像处理器（RIP）以及用于管理和控制工作流的PrintDrive系统 包含光栅图像数据的图像文件到多个用户可选输出设备。

公开(公告)号：US5476979A

公开(公告)日：1995-12-19

申请号：US227806

申请日：1994-04-14

Applicant: Larry N. Ito ,  Craig B. Murchison ,  Michael T. Holbrook ,  A. Dale Harley ,  David D. Smith

Inventor： Larry N. Ito ,  Craig B. Murchison ,  Michael T. Holbrook ,  A. Dale Harley ,  David D. Smith

IPC: B01J23/89 ,  B01J23/52 ,  B01J27/18 ,  C07B61/00 ,  C07C1/26 ,  C07C1/30 ,  C07C17/23 ,  C07C17/25 ,  C07C21/02 ,  C07C21/10 ,  C07C21/04

CPC classification number: B01J23/52 ,  B01J23/8926 ,  C07C1/26 ,  C07C1/30 ,  C07C17/23 ,  C07C17/25 ,  C07C2521/18 ,  C07C2523/14 ,  C07C2523/18 ,  C07C2523/42 ,  C07C2523/44 ,  C07C2523/46 ,  C07C2523/50 ,  C07C2523/52 ,  C07C2523/72 ,  C07C2523/89 ,  Y02P20/52

Abstract: A process for converting a chlorinated alkene feedstock including two or more chlorines to reaction products including a less-chlorinated alkene in a commercially substantial proportion, comprising reacting the chlorinated alkene feedstock with hydrogen in the presence of a catalyst consisting essentially of a Group VIII metal other than rhodium, palladium or ruthenium and a Group IB metal on a support.

Abstract translation: 一种将包含两种或多种氯的氯化烯烃原料转化成包括较低氯化烯烃在内的市售重要比例的反应产物的方法，包括使氯代烯烃原料与氢在催化剂存在下反应，所述催化剂基本上由VIII族金属 比铑，钯或钌以及载体上的IB族金属。