公开(公告)号：US08395305B2

公开(公告)日：2013-03-12

申请号：US12410298

申请日：2009-03-24

申请人： Akira Fujimoto ,  Koji Asakawa

发明人： Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L51/00 ,  H01L51/50 ,  H01L51/52

CPC分类号： H01J11/10 ,  G02F1/133502 ,  G02F1/133512 ,  G02F2001/133562 ,  G02F2001/133565 ,  H01J9/205 ,  H01L51/52 ,  H01L51/5262

摘要： A display device comprises a substrate and a laminate structure formed on the substrate and comprising a plurality of layers including a display region. The laminate structure has a recessed/projected portions at least one of an outermost surface of display side and an interface between the layers. The projected portions of the recessed/projected portions have a mean circle-equivalent diameter ranging from 50 nm to 250 nm with the standard deviation of circle-equivalent diameter of the projected portions being within the range of 10 to 50% of the mean circle-equivalent diameter, and a mean height ranging from 100 nm to 500 nm with the standard deviation of height being within the range of 10 to 50% of the mean height. The projected portions have a circularity coefficient ranging from 0.6 to 1, and an area ratio ranging from 20 to 75%.

公开(公告)号：US20130057138A1

公开(公告)日：2013-03-07

申请号：US13669793

申请日：2012-11-06

申请人： Eishi TSUTSUMI ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi TSUTSUMI ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01J1/54

CPC分类号： H01L31/022491 ,  G02F1/13439 ,  H01J2211/225 ,  H01L51/5234

摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

摘要翻译： 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。 这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。

公开(公告)号：US08355204B2

公开(公告)日：2013-01-15

申请号：US12346937

申请日：2008-12-31

申请人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Shigeru Matake ,  Koji Asakawa

发明人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Shigeru Matake ,  Koji Asakawa

IPC分类号： G02B5/18 ,  G02B27/42

CPC分类号： H01L51/5262 ,  H01L51/5271 ,  H01L2251/5315

摘要： The present invention provides a highly efficient light-extraction layer and an organic electroluminescence element excellent in light-extraction efficiency. The light-extraction layer of the present invention comprises a reflecting layer and a three-dimensional diffraction layer formed thereon. The diffraction layer comprises fine particles having a variation coefficient of the particle diameter of 10% or less and of a matrix having a refractive index different from that of the fine particles. The particles have a volume fraction of 50% or more based on the volume of the diffraction layer. The particles are arranged to form first areas having short-distance periodicity, and the first areas are disposed and adjacent to each other in random directions to form second areas. The organic electroluminescence element of the present invention comprises the above light-extraction layer.

摘要翻译： 本发明提供了光提取效率优异的高效率的光提取层和有机电致发光元件。 本发明的光提取层包括反射层和在其上形成的三维衍射层。 衍射层包括具有10％以下的粒径变化系数的微粒和具有与微粒的折射率不同的折射率的基质。 基于衍射层的体积，粒子的体积分数为50％以上。 颗粒被布置成形成具有短距离周期的第一区域，并且第一区域在随机方向上彼此设置和相邻，以形成第二区域。 本发明的有机电致发光元件包含上述光提取层。

公开(公告)号：US08334547B2

公开(公告)日：2012-12-18

申请号：US12187653

申请日：2008-08-07

申请人： Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa

发明人： Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa

IPC分类号： H01L33/00

CPC分类号： H01L31/022491 ,  G02F1/13439 ,  H01J2211/225 ,  H01L51/5234

摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

摘要翻译： 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续，90％以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用，在380nm至780nm中使用。 这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内，并且开口中心之间的间距不小于平均直径，不大于平均直径的1/2 入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。

公开(公告)号：US20120238109A1

公开(公告)日：2012-09-20

申请号：US13429901

申请日：2012-03-26

申请人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L21/312

CPC分类号： G03F7/165 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/0755 ,  G03F7/265 ,  H01L21/0337 ,  H01L21/306

摘要： According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.

摘要翻译： 根据一个实施例，形成图案的方法包括在衬底上形成单层，选择性地将单层暴露于能量束并选择性地修改曝光部分以形成暴露部分和未曝光部分的图案，形成嵌段共聚物层包括第一和 基于单层的暴露部分和未曝光部分的图案，使嵌段共聚物层相分离以形成嵌段共聚物层的第一和第二嵌段链的图案。

公开(公告)号：US20120228654A1

公开(公告)日：2012-09-13

申请号：US13221326

申请日：2011-08-30

申请人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US20120112171A1

公开(公告)日：2012-05-10

申请号：US13234657

申请日：2011-09-16

申请人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

发明人： Shigeki Hattori ,  Reika Ichihara ,  Masaya Terai ,  Hideyuki Nishizawa ,  Tsukasa Tada ,  Koji Asakawa ,  Hiroyuki Fuke ,  Satoshi Mikoshiba ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

IPC分类号： H01L51/54 ,  H01L51/40

CPC分类号： H01L29/513 ,  H01L21/02118 ,  H01L21/02227 ,  H01L21/28282 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L51/0591

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。

公开(公告)号：US20120061712A1

公开(公告)日：2012-03-15

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US20120056232A1

公开(公告)日：2012-03-08

申请号：US13037937

申请日：2011-03-01

申请人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/38 ,  H01L33/42 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括结构体，第一电极层，中间层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。 第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。 中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。 第二电极层电连接到第一半导体层。

公开(公告)号：US20110049556A1

公开(公告)日：2011-03-03

申请号：US12712693

申请日：2010-02-25

申请人： Akira FUJIMOTO ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Akira FUJIMOTO ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0083

摘要： The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and they penetrate through the metal electrode layer. That metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.

摘要翻译： 本发明提供即使电力增加也能够保持高亮度强度的半导体发光装置，因此该装置适用于照明装置如灯和灯。 该半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。 开口的平均直径为10nm〜2μm，穿过金属电极层。 该金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。