公开(公告)号：US20110258840A1

公开(公告)日：2011-10-27

申请号：US13133548

申请日：2009-10-06

申请人： Hiroaki Urano ,  Eiji Yamada ,  Kazutaka Tatematsu ,  Yasuhiro Endo ,  Yasuaki Tahara ,  Akihiro Tanaka ,  Kenji Honda

发明人： Hiroaki Urano ,  Eiji Yamada ,  Kazutaka Tatematsu ,  Yasuhiro Endo ,  Yasuaki Tahara ,  Akihiro Tanaka ,  Kenji Honda

IPC分类号： H02K15/02

CPC分类号： H02K1/148 ,  H02K1/04 ,  H02K15/022

摘要： A stator provided with an annular stator core formed by annularly arranging split stator cores, and also with coils mounted to the stator core. The split stator cores each includes a yoke portion extending in a circumferential direction of the stator core and a stator tooth protruding from the yoke portion. On at least part of side surfaces of the stator tooth that are arranged in a circumferential direction of the stator core, a radial end surface of the stator tooth that is located radially inward of the stator core, and, of radial end surfaces of the yoke portion that are arranged in a radial direction of the stator core, the radial end surface at which the stator tooth is formed, a rough surface portion is formed having surface roughness greater than that of circumferential end surfaces of the yoke portion that are located in a circumferential direction of the stator core.

摘要翻译： 定子，其设置有环形定子芯，其通过环形布置分开的定子芯，以及安装到定子芯的线圈形成。 分体定子铁心各自包括在定子铁心的周向延伸的轭部和从轭部突出的定子齿。 在沿着定子铁芯的圆周方向配置的定子齿的至少一部分侧表面上，定子齿的位于定子铁芯径向内侧的径向端面和轭的径向端面 所述定子铁心的径向方向配置在所述定子齿的径向端面上，形成表面粗糙度大于所述轭部的周向端面的粗糙面部， 定子铁心圆周方向。

公开(公告)号：US20110136276A1

公开(公告)日：2011-06-09

申请号：US12979059

申请日：2010-12-27

申请人： Takeshi KAMIKAWA ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

发明人： Takeshi KAMIKAWA ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

IPC分类号： H01L21/306

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

摘要翻译： 氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。 在缺陷密度低至106cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。 在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。 利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。 此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

公开(公告)号：US07903708B2

公开(公告)日：2011-03-08

申请号：US10902481

申请日：2004-07-30

申请人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

发明人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki ,  Yoshika Kaneko

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01S5/0213 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is formed by etching. On this substrate (10), a nitride semiconductor film (11) is grown, and a laser stripe (12) is formed off the area right above the depressed portion (16). With this structure, the laser stripe (12) is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film (11) develops reduced cracks, resulting in a greatly increased yield rate.

摘要翻译： 氮化物半导体激光器件使用具有低缺陷密度的衬底，在氮化物半导体膜内包含减少的应变，从而提供令人满意的长使用寿命。 在缺陷密度低至106cm -2以下的GaN衬底（10）上，通过蚀刻形成条形凹部（16）。 在该基板（10）上生长氮化物半导体膜（11），在凹部（16）正上方的区域形成激光条纹（12）。 利用这种结构，激光条纹（12）没有应变，半导体激光器件使用寿命长。 此外，氮化物半导体膜（11）产生减少的裂纹，导致大大提高的屈服率。

公开(公告)号：US20100259136A1

公开(公告)日：2010-10-14

申请号：US12740044

申请日：2008-10-17

申请人： Kenji Hiramoto ,  Hideo Nakai ,  Eiji Yamada ,  Norimoto Minoshima ,  Masahiro Seguchi

发明人： Kenji Hiramoto ,  Hideo Nakai ,  Eiji Yamada ,  Norimoto Minoshima ,  Masahiro Seguchi

IPC分类号： H02K3/28 ,  H02K11/04 ,  H02P23/00

CPC分类号： H02K19/12 ,  H02K1/223 ,  H02K19/28 ,  H02K21/042

摘要： A plurality of salient poles projecting toward a stator are arranged on a rotor core along the circumferential direction while being spaced apart from each other, and rotor windings are wound around these salient poles. The rotor windings are short-circuited through diodes, respectively; and when currents rectified by the diodes flow through the rotor windings, the salient poles are magnetized to produce a magnet where the magnetic pole is fixed. The width θ of each salient pole in the circumferential direction is smaller than a width corresponding to an electric angle of 180° of the rotor, and the rotor windings are wound around each salient pole by short-pitch winding.

摘要翻译： 在定子上突出的多个凸极相互间隔地配置在转子铁心上，并且转子绕组缠绕在这些凸极上。 转子绕组分别通过二极管短路; 并且当由二极管整流的电流流过转子绕组时，凸极被磁化以产生固定磁极的磁体。 宽度和长度 每个凸极在圆周方向上的距离小于对应于转子180°的电角度的宽度，并且转子绕组通过短间距绕组缠绕在每个凸极上。

公开(公告)号：US20100075218A1

公开(公告)日：2010-03-25

申请号：US12513284

申请日：2008-03-07

申请人： Kazutaka Tatematsu ,  Ryoji Mizutani ,  Eiji Yamada ,  Yasuhiro Endo

发明人： Kazutaka Tatematsu ,  Ryoji Mizutani ,  Eiji Yamada ,  Yasuhiro Endo

IPC分类号： H01M6/42 ,  H01M10/18

CPC分类号： H01M10/0418 ,  H01M2/0207 ,  H01M2/202 ,  H01M2/307

摘要： A battery unit includes a casing, bipolar batteries as a plurality of stacked type batteries housed in the casing, and a plug. The bipolar battery is formed by stacking a plurality of battery elements each having sheet electrodes on opposite sides of an electrolyte, and has collectors. The plug is detachably inserted between the bipolar batteries, and electrically connects bipolar batteries.

摘要翻译： 电池单元包括壳体，作为容纳在壳体中的多个堆叠型电池的双极电池和插头。 双极电池通过在电解质的相对侧上堆叠多个具有片状电极的电池元件而形成，并具有集电体。 插头可拆卸地插入在双极电池之间，并且电连接双极电池。

公开(公告)号：US20070066029A1

公开(公告)日：2007-03-22

申请号：US11601795

申请日：2006-11-20

申请人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki

发明人： Takeshi Kamikawa ,  Eiji Yamada ,  Masahiro Araki

IPC分类号： H01L21/76 ,  H01L21/8242

CPC分类号： H01S5/32341 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2231 ,  H01S2304/12

摘要： On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.

公开(公告)号：US20060057824A1

公开(公告)日：2006-03-16

申请号：US11221951

申请日：2005-09-09

申请人： Masahiro Araki ,  Eiji Yamada ,  Takayuki Yuasa ,  Yuhzoh Tsuda ,  Nakao Akutsu

发明人： Masahiro Araki ,  Eiji Yamada ,  Takayuki Yuasa ,  Yuhzoh Tsuda ,  Nakao Akutsu

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： C23C16/303 ,  B82Y20/00 ,  C23C16/45504 ,  C23C16/45563 ,  C23C16/45574 ,  C30B25/14 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/34333 ,  H01S2304/04

摘要： The present invention relates to an apparatus for producing a nitride semiconductor by crystal-growing the nitride semiconductor on a substrate by diffusing a gas containing a source gas of group III element and a source gas of group V element. The gas is diffused in parallel with the substrate and from upstream to downstream. The apparatus has the substrate housed in the apparatus and a flow channel for allowing the gas to flow in the flow channel. The apparatus also has a plurality of protrusions provided on an inner wall of the flow channel. A partition for causing the source gas of group III element and the source gas of group V element to be introduced separately into the flow channel is provided on the upstream portion of the flow channel and in a horizontal direction. The protrusions are formed on the upper and lower surfaces of the partition. With this structure, the source gas of group III element and the source gas of group V element are more uniformly mixed before the source gases are supplied.

摘要翻译： 本发明涉及通过使含有III族元素的源气体和V族元素源气体的气体扩散而在衬底上晶体生长氮化物半导体来制造氮化物半导体的装置。 气体与底物平行扩散，从上游到下游扩散。 该装置具有容纳在装置中的基板和用于允许气体在流动通道中流动的流动通道。 设备还具有设置在流动通道的内壁上的多个突起。 在流路的上游部分和水平方向上设置用于将III族元素的源气体和V族元素的源气体分开引入流路的分隔。 突起形成在隔板的上表面和下表面上。 利用这种结构，在供应源气体之前，III族元素的源气体和V族元素的源气体更均匀地混合。

公开(公告)号：US20060038331A1

公开(公告)日：2006-02-23

申请号：US11199788

申请日：2005-08-09

申请人： Tsutomu Ogawa ,  Kunihiko Kimura ,  Shuichi Ono ,  Eiji Yamada

发明人： Tsutomu Ogawa ,  Kunihiko Kimura ,  Shuichi Ono ,  Eiji Yamada

IPC分类号： F16F15/00

CPC分类号： F16F13/149

摘要： An engine mount system includes multiple liquid-filled engine mounts switchable to provide different mount characteristics by selectively introducing negative pressure or atmospheric pressure. On one of pipelines connected to the respective engine mounts for introducing the negative or atmospheric pressure into the respective engine mounts, a check valve and an orifice portion are provided in parallel. The orifice portion restricts an amount of air flowing therethrough, so that the mount characteristic of the engine mount connected to the one pipeline equipped with the check valve and the orifice portion does not undergo an abrupt change when the pressure introduced in the engine mount is switched from the negative pressure to the atmospheric pressure.

公开(公告)号：US06996764B2

公开(公告)日：2006-02-07

申请号：US10125037

申请日：2002-04-18

申请人： Eiji Yamada

发明人： Eiji Yamada

IPC分类号： G11B20/18 ,  H03M13/45

CPC分类号： H03M13/6343 ,  H03M5/145 ,  H03M13/23 ,  H03M13/2957 ,  H03M13/45

摘要： At a preceding stage of a PR-channel APP decoder out of two APP decoders constituting a turbo decoder is disposed a logarithmic-likelihood computing circuit that computes logarithmic likelihoods L(y′i|yi) of a reproduced signal y′i, which is soft information. At a succeeding stage of the PR-channel APP decoder, on the other hand, a likelihood-transform RLL demodulator and a likelihood-transform RLL modulator capable of treating logarithmic likelihood ratios, which are soft information, are disposed between this APP decoder and a convolutional-code APP decoder. Thus, both RLL demodulation and turbo decoding can be fulfilled, and a turbo decoding of high error-correcting capability can be used to reproduce channel data ai recorded on a recording medium. As a result, the recording density of the recording medium is enhanced.

摘要翻译： 在构成turbo解码器的两个APP解码器中的PR信道APP解码器的前一级设置有对数似然计算电路，其计算对数似然度L（y'i i | y i ）作为软信息。 另一方面，在PR通道APP解码器的后续阶段，将能够处理作为软信息的对数似然比的似然变换RLL解调器和似然变换RLL调制器配置在该APP解码器和 卷积码APP解码器。 因此，可以实现RLL解调和turbo解码，并且可以使用高纠错能力的turbo解码来再现记录在记录介质上的信道数据。 结果，提高了记录介质的记录密度。

公开(公告)号：US20050179804A1

公开(公告)日：2005-08-18

申请号：US11107243

申请日：2005-04-14

申请人： Ikuo Nakano ,  Eiji Yamada

发明人： Ikuo Nakano ,  Eiji Yamada

IPC分类号： G11B7/00 ,  G11B7/09 ,  G11B7/135 ,  H04N5/225

CPC分类号： G11B7/13925 ,  G11B7/1374 ,  G11B7/1376 ,  G11B2007/0013 ,  G11B2007/13727

摘要： An optical recording/reproducing apparatus is arranged so that, upon recording or reproducing a recording medium having a plurality of recording layers, the gap of the lens groups at the time of forming a converged light spot on this first recording layer is DIS (1), the gap of the lens groups at the time of forming the converged light spot on the N-th layer (the farthest layer from the surface of the recording medium) is DIS (N) and the neutral point of the spherical-aberration correcting mechanism is set at a position satisfying the following expression: lens group gap dst (3)=((DIS (1)+DIS (N))/2.

摘要翻译： 光记录/再现装置被布置成使得在记录或再现具有多个记录层的记录介质时，在该第一记录层上形成会聚光点时的透镜组的间隙为DIS（1） 在形成第N层（与记录介质表面最远的层）上的会聚光点时的透镜组的间隙为DIS（N），球面像差校正机构的中性点 设置在满足以下表达式的位置：透镜组间隙dst（3）=（（DIS（1）+ DIS（N））/ 2。