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    Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication
    102.
    发明授权
    Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication 有权
    具有氧掺杂的SiC抗反射涂层的互连结构和制造方法

    公开(公告)号：US08373271B2

    公开(公告)日：2013-02-12

    申请号：US12788912

    申请日：2010-05-27

    申请人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    发明人： Dario L. Goldfarb ,  Ranee W. Kwong ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Hosadurga Shobha

    IPC分类号： H01L23/532

    CPC分类号： H01L21/76802 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material. Also, the oxygen-doped SiC ARC can withstand current BEOL processing conditions.

    摘要翻译： 提供了一种互连结构，其包括位于图案化和固化的氧掺杂的SiC抗反射涂层（ARC）的表面上的至少一个图案化和固化的可光图案化的低k材料。 导电填充区域位于至少一个图案化和固化的可光图案化低k材料和图案化和固化的氧掺杂SiC ARC内。 作为薄层（即，小于400埃）的氧掺杂SiC ARC不产生可能降解扩散阻挡层和嵌入图案化和固化的可光图案化低k内的导电特征的驻波 介电材料，因此，维持结构完整性。 此外，由于采用薄的氧掺杂SiC ARC，所以可以减少用于打开ARC /电介质盖的材料堆叠的等离子体蚀刻处理时间，从而减少图案化和固化的可光图案化的低k材料的潜在的等离子体损伤 。 此外，氧掺杂的SiC ARC可以承受当前的BEOL加工条件。

    Methods to form self-aligned permanent on-chip interconnect structures
    103.
    发明授权
    Methods to form self-aligned permanent on-chip interconnect structures 有权
    形成自对准永久性片上互连结构的方法

    公开(公告)号：US08354339B2

    公开(公告)日：2013-01-15

    申请号：US12839697

    申请日：2010-07-20

    申请人： Qinghuang Lin

    发明人： Qinghuang Lin

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76802 ,  H01L21/76808 ,  H01L2221/1031

    摘要： Methods of fabricating a self-aligned permanent on-chip interconnect structure are provided. In one embodiment, the method includes forming a patterned photoresist having at least one opening on a surface of a substrate. A dielectric sidewall structure is then formed on each sidewall of the patterned photoresist and within the at least one opening. A narrowed width opening is present between neighboring dielectric sidewall structures. The patterned photoresist is then removed and thereafter each dielectric sidewall structure is converted into a permanent patterned dielectric structure which is self-aligned and double patterned. At least an electrically conductive material is formed within the narrowed width openings.

    摘要翻译： 提供了制造自对准的永久性片上互连结构的方法。 在一个实施例中，该方法包括形成具有在基底表面上的至少一个开口的图案化光致抗蚀剂。 然后在图案化的光致抗蚀剂的每个侧壁上并且在至少一个开口内形成电介质侧壁结构。 相邻电介质侧壁结构之间存在狭窄的宽度开口。 然后去除图案化的光致抗蚀剂，然后将每个电介质侧壁结构转换成自对准和双重图案化的永久图案化电介质结构。 至少在狭窄的​​宽度开口内形成导电材料。

    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING
    104.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FABRICATING 有权
    互连结构和制作方法

    公开(公告)号：US20130009323A1

    公开(公告)日：2013-01-10

    申请号：US13613890

    申请日：2012-09-13

    申请人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    发明人： Qinghuang Lin ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran

    IPC分类号： H01L23/48

    CPC分类号： H01L23/5329 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/743 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material.

    摘要翻译： 提供一种互连结构，其包括半导体衬底; 图案化和固化的光致抗蚀剂，其中光致抗蚀剂含有低k电介质替代物，并且在其顶部和侧壁表面上包含形成通孔或沟槽的强化层; 以及通孔或沟槽中的导电填充材料。 还提供了一种用于制造互连结构的方法，其包括在半导体衬底上沉积光致抗蚀剂，其中光致抗蚀剂含有低k电介质成分; 将光刻胶成像曝光于光化辐射; 然后在光致抗蚀剂中形成通孔或沟槽的图案; 表面强化通孔或沟槽的图案，证明通孔或沟槽的顶部和侧壁上的强化层; 固化通孔或沟槽的图案，从而将光致抗蚀剂转化为电介质; 并用导电填充材料填充通孔和沟槽。

    MECHANICALLY ROBUST METAL/LOW-k INTERCONNECTS
    108.
    发明申请
    MECHANICALLY ROBUST METAL/LOW-k INTERCONNECTS 有权
    机械稳定的金属/低k互连

    公开(公告)号：US20110318942A1

    公开(公告)日：2011-12-29

    申请号：US13229250

    申请日：2011-09-09

    申请人： Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

    发明人： Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

    IPC分类号： H01L21/31

    CPC分类号： H01L21/3105 ,  H01L21/76805 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834

    摘要： A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.

    摘要翻译： 提供了具有改善的低k电介质层和含电介质衬底之间的粘附强度的机械稳固的半导体结构。 特别地，本发明提供了一种结构，其包括含电介质的衬底，其具有包括化学和物理上不同于衬底的经处理的表面层的上部区域; 以及位于所述基板的经处理的表面层上的低k电介质材料。 经处理的表面层和低k电介质材料形成界面，该界面的粘合强度大于界面两侧的较弱材料的内聚强度的60％。 经处理的表面通过在形成低k电介质材料之前用光化辐射，等离子体和电子束辐射中的至少一种来处理衬底的表面而形成。