公开(公告)号：US20070293029A1

公开(公告)日：2007-12-20

申请号：US11594856

申请日：2006-11-09

申请人： Hiroyuki Ogawa ,  Hideyuki Kojima

发明人： Hiroyuki Ogawa ,  Hideyuki Kojima

IPC分类号： H01L21/8234

CPC分类号： H01L21/823462 ,  H01L21/823857 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546

摘要： The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20, a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 having a first to a third region; removing an insulating film 24, the conductive film 22 and an insulating film 20 formed in the second region and the third region; forming an insulating film 38 in the second region and the third region; removing the insulating film 24 in the first region and the insulating film 38 in the third region; forming an insulating film 44 in the third region; after a conductive film 52 has been formed, patterning the conductive films 22, 52 in the first region to form a gate electrode 58; and patterning the conductive film 52 to form gate electrodes 62 in the second region and the third region while removing the conductive film 52 over the gate electrode 58.

摘要翻译： 制造半导体器件的方法包括以下步骤：在具有第一至第三区域的半导体衬底10上形成绝缘膜20，导电膜22和绝缘膜24; 去除绝缘膜24，导电膜22和形成在第二区域和第三区域中的绝缘膜20; 在第二区域和第三区域中形成绝缘膜38; 去除第一区域中的绝缘膜24和第三区域中的绝缘膜38; 在第三区域中形成绝缘膜44; 在形成导电膜52之后，在第一区域中图案化导电膜22,52以形成栅电极58; 以及图案化导电膜52以在第二区域和第三区域中形成栅极电极62，同时在栅极电极58上移除导电膜52。

公开(公告)号：US20070141815A1

公开(公告)日：2007-06-21

申请号：US11679724

申请日：2007-02-27

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测， 并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

公开(公告)号：US20070096103A1

公开(公告)日：2007-05-03

申请号：US11612768

申请日：2006-12-19

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L29/04

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US07186602B2

公开(公告)日：2007-03-06

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/84 ,  H01L21/324

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US20060284175A1

公开(公告)日：2006-12-21

申请号：US11509605

申请日：2006-08-25

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L31/00

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

公开(公告)号：US07105419B2

公开(公告)日：2006-09-12

申请号：US10879165

申请日：2004-06-30

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/30 ,  H01L21/76 ,  H01L21/46

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

公开(公告)号：US20060124971A1

公开(公告)日：2006-06-15

申请号：US11335470

申请日：2006-01-20

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

IPC分类号： H01L29/768

CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.

摘要翻译： 半导体器件包括非单晶半导体膜，支撑非单晶半导体膜的支撑衬底和具有部分非单晶半导体膜作为沟道区的有源器件。 特别地，沟道区的氧浓度不高于1×10 18原子/ cm 3，碳浓度不高于1×10 18原子 / cm 3。

公开(公告)号：US20060089234A1

公开(公告)日：2006-04-27

申请号：US11223968

申请日：2005-09-13

申请人： Hiroyuki Ogawa

发明人： Hiroyuki Ogawa

IPC分类号： B60K41/04

CPC分类号： B60W30/18054 ,  B60W30/1884 ,  F02D11/105 ,  Y10T477/675 ,  Y10T477/679

摘要： An ECT_ECU executes a program including the step of identifying the drive mode, the step of determining whether the engine is in an idling state or not, the step of detecting the speed of an automatic transmission when not in an idling state, the step of detecting an accelerator press-down rate of change, the step of detecting vehicle speed, the step of calculating a target acceleration rate of change of the vehicle based on the drive mode, speed of the automatic transmission, accelerator press-down rate of change, and vehicle speed, and the step of calculating the target acceleration by integrating the calculated target acceleration rate of change with respect to time.

摘要翻译： ECT_ECU执行包括识别驱动模式的步骤，确定发动机是否处于怠速状态的步骤的程序，在不处于怠速状态时检测自动变速器的速度的步骤，检测步骤 加速器按压变化率，车速检测步骤，基于驾驶模式，自动变速器的速度，加速器按压变化率等计算车辆的目标加速度变化的步骤，以及 以及通过将计算出的目标加速变化率相对于时间积分来计算目标加速度的步骤。

公开(公告)号：US07019366B1

公开(公告)日：2006-03-28

申请号：US10758173

申请日：2004-01-14

申请人： Nian Yang ,  Hiroyuki Ogawa ,  Yider Wu ,  Kuo-Tung Chang ,  Yu Sun

发明人： Nian Yang ,  Hiroyuki Ogawa ,  Yider Wu ,  Kuo-Tung Chang ,  Yu Sun

IPC分类号： H01L23/62

CPC分类号： H01L27/0251

摘要： More efficient use of silicon area is achieved by incorporating an electrostatic discharge protective (ESDP) device beneath a pad area of a semiconductor structure. The pad area includes a substrate having a first metal layer above it. A second metal layer is above the first metal layer. The ESDP device resides in the substrate below the first metal layer. A layer of dielectric separates the first and second metal layers. A via within the dielectric layer electrically couples the first and second metal layers. A via connects to the ESDP component. Subsequent metal layers can be arranged between the first and second metal layers. The Ohmic value of the resistance component of the ESDP device can be set during fabrication by fixing a number of individual via components, arranged electrically in parallel, by fixing the cross sectional area of the via components, and/or by fixing the length of the via components.

摘要翻译： 通过在半导体结构的焊盘区域的下方并入静电放电保护（ESDP）器件来实现硅面积的更有效的使用。 焊盘区域包括在其上方具有第一金属层的基板。 第二金属层位于第一金属层之上。 ESDP设备位于第一金属层下方的基板中。 电介质层分离第一和第二金属层。 电介质层内的通孔电耦合第一和第二金属层。 A通道连接到ESDP组件。 随后的金属层可以布置在第一和第二金属层之间。 ESDP装置的电阻部件的欧姆值可以在制造期间通过固定多个单独的通孔部件，通过固定通孔部件的横截面面积和/或固定长度 通过组件。

公开(公告)号：US07016523B1

公开(公告)日：2006-03-21

申请号：US09556824

申请日：2000-04-21

申请人： Hiroyuki Ogawa

发明人： Hiroyuki Ogawa

IPC分类号： G06K9/00

CPC分类号： C12Q1/04 ,  G01N15/1463 ,  G01N2015/1486 ,  G06K9/00154

摘要： Fast microbial detection is accomplished by identifying quantities of microorganisms accurately and easily.A cell 5 is placed on a loading portion. A coherent laser beam source 2 emits laser beam to a cell 5. A CCD area image sensor 4 is an array of light sensitive detectors. An image sensor 4 receives light projection image that passes through a cell 5 illuminated by the beam from a laser beam source 2, generating projection image signals on each light sensitive detectors. The projection image data is fed into a computer and analyzed.

摘要翻译： 快速的微生物检测是通过准确，容易地识别微生物量来实现的。 电池5放置在装载部分上。 相干激光束源2向单元5发射激光束。 CCD区域图像传感器4是光敏检测器的阵列。 图像传感器4接收通过来自激光束源2的光束照射的单元5的光投影图像，在每个感光检测器上产生投影图像信号。 将投影图像数据馈送到计算机中并进行分析。