METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    104.
    发明申请

    公开(公告)号:US20180197975A1

    公开(公告)日:2018-07-12

    申请号:US15860001

    申请日:2018-01-02

    Inventor: Yasuhiro JINBO

    Abstract: A manufacturing method of a semiconductor device including a step of forming a silicon layer over a formation substrate, a step of forming a resin layer over the silicon layer, a step of forming a transistor over the resin layer, a step of forming a conductive layer over the silicon layer and the resin layer, and a step of separating the formation substrate and the transistor. The resin layer has an opening over the silicon layer. The conductive layer is in contact with the silicon layer through the opening in the resin layer. In the step of separating the formation substrate and the transistor, the silicon layer is irradiated with light, so that silicon contained in the silicon layer reacts with a metal contained in the conductive layer, and a metal silicide layer is formed.

    METHOD FOR MANUFACTURING DISPLAY DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
    109.
    发明申请
    METHOD FOR MANUFACTURING DISPLAY DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权
    用于制造显示器件的方法和用于制造电子器件的方法

    公开(公告)号:US20160351641A1

    公开(公告)日:2016-12-01

    申请号:US15163072

    申请日:2016-05-24

    Abstract: A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

    Abstract translation: 提供一种制造不容易损坏电极的显示装置的方法。 在第一步骤中,在第一基板上设置端子电极,布线和功能层; 端子电极,布线和功能层彼此电连接; 绝缘层设置在端子电极上; 在端子电极和绝缘层上设置第一层; 粘合剂层夹在第一基板和第二基板之间; 第二基板和粘合剂层包括与第一层的一部分重叠的第一开口; 并且所述绝缘层在顶视图中包括在所述第一开口内的第二开口。 在第二步骤中,通过向第一层发射具有高升华性质的颗粒来去除第一层的一部分,从而露出端子电极。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    110.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20160329531A1

    公开(公告)日:2016-11-10

    申请号:US15214989

    申请日:2016-07-20

    Abstract: A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

    Abstract translation: 一种制造半导体器件的方法包括:在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后,将元件形成层与具有透光性的基板分离。

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