中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

105 records (took 0.039 seconds)

    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
    103.
    发明授权
    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
    使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法

    公开(公告)号：US5372973A

    公开(公告)日：1994-12-13

    申请号：US53794

    申请日：1993-04-27

    Applicant: Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    Inventor： Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    IPC: H01J1/304 ,  H01J9/02 ,  H01L21/3105 ,  H01L21/465

    CPC classification number: H01J9/025 ,  H01L21/31053 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

    Abstract: A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

    Abstract translation: 用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积 具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii） 化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料 。

    Field electron emission device
    104.
    发明授权
    Field electron emission device 失效
    场电子发射装置

    公开(公告)号：US5229682A

    公开(公告)日：1993-07-20

    申请号：US841194

    申请日：1992-02-21

    Applicant: Hiroshi Komatsu

    Inventor： Hiroshi Komatsu

    IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01L23/544

    CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J9/025 ,  H01L23/544 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473 ,  H01L2924/0002

    Abstract: A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.

    Abstract translation: 一种场致发射器件及其制造方法，其包括使用扩散掩模来保留用于阴极的硅衬底的面积，同时所述衬底周围的所述衬底全部被氧扩散以形成绝缘层。 并且还包括在所述绝缘层上沉积钼栅极层并蚀刻所述钼栅极层，使得所述扩散掩模脱落，并且所述绝缘层通过所述扩散掩模通过形成在所述栅电极层中的所述孔溶解在所述阴极周围 删除。 因此，栅电极开口自动且独立地与它们各自的阴极自对准。

    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
    105.
    发明授权
    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
    使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法

    公开(公告)号：US5229331A

    公开(公告)日：1993-07-20

    申请号：US837453

    申请日：1992-02-14

    Applicant: Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    Inventor： Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    IPC: H01J1/304 ,  H01J9/02 ,  H01L21/3105

    CPC classification number: H01J9/025 ,  H01L21/31053 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

    Abstract: A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

    Abstract translation: 用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积 具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii） 化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料 。

Patent Agency Ranking