公开(公告)号：US3959038A

公开(公告)日：1976-05-25

申请号：US573288

申请日：1975-04-30

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01L7/36 ,  H01L7/38 ,  H01L7/54

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes and techniques for the fabrication thereof, utilizing multilayers of GaAs and gallium alluminum arsenide (GaAlAs) wherein the GaAs layer serves as the emitting layer and the GaAlAs serves as an intermediate construction layer and/or as an integral part of the component.

Abstract translation: 透射模式负电子亲和势砷化镓（GaAs）光电阴极及其制造方法，利用GaAs和镓铝砷化镓（GaAlAs）的多层，其中GaAs层用作发光层，GaAlAs用作中间构造层， /或作为组件的组成部分。

公开(公告)号：US3953880A

公开(公告)日：1976-04-27

申请号：US455231

申请日：1974-03-27

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01L27/14 ,  H01L29/161 ,  H01L31/00

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J9/12 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract translation: 半导体光电子发射器件包括两个或多个不同半导体的混合晶体，形成具有直接跃迁类型的异质结，该直接跃迁类型限定可被光电子激发的第一区域，以及限定禁带宽度大于第二区域的第二区域的间接跃迁类型 第一区域，其表面是光电子发射表面。

公开(公告)号：US3932883A

公开(公告)日：1976-01-13

申请号：US482700

申请日：1974-06-24

Applicant: Michael Charles Rowland ,  David Robert Wight

Inventor： Michael Charles Rowland ,  David Robert Wight

IPC: H01J1/34 ,  H01L29/161 ,  H01L27/14 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/005 ,  Y10S148/066 ,  Y10S148/067 ,  Y10S148/072

Abstract: A transmission photocathode comprising a crystal substrate transparent to the radiation to be detected, at least one epitaxial crystalline intermediate layer having a lattice constant close to that of the detector layer and transparent to the radiation to be detected, and a p-type group III-V compound detector layer. Preferably the intermediate layer is p-type.

Abstract translation: 一种透射光电阴极，包括对待检测的辐射透明的晶体衬底，至少一个晶格常数接近检测器层的晶格常数并对被检测的辐射透明的外延晶体中间层，以及p型III- V复合检测器层。 优选地，中间层是p型。

公开(公告)号：US3931633A

公开(公告)日：1976-01-06

申请号：US555604

申请日：1975-03-05

Applicant: John Martin Shannon ,  John Ernest Ralph

Inventor： John Martin Shannon ,  John Ernest Ralph

IPC: H01J40/02 ,  H01J1/34 ,  H01J43/08 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L31/112 ,  H01L31/153 ,  H01L27/14

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1126 ,  H01J2201/3423

Abstract: A semiconductor photocathode is described in which the electron emission is obtained from a P-type semiconductor into which free electrons are injected from the source or drain of an FET whose channel is normally blocked. Incident photons absorbed in the channel region unblock the FET causing electron emission. Preferably, the device comprises an imaging array of FET's and associated electron emitters.

Abstract translation: 描述了一种半导体光电阴极，其中从其通道正常被阻挡的FET的源极或漏极注入自由电子的P型半导体获得电子发射。 在通道区域中吸收的入射光子阻止FET引起电子发射。 优选地，该器件包括FET和相关电子发射器的成像阵列。

公开(公告)号：US3914136A

公开(公告)日：1975-10-21

申请号：US30975672

申请日：1972-11-27

Applicant: RCA CORP

Inventor： KRESSEL HENRY

IPC: H01J1/34 ,  H01J9/12 ,  H01L7/36 ,  H01L7/38

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/107 ,  Y10S148/12

Abstract: A transmission photocathode device of the negative-electronaffinity type is disclosed. The device comprises epitaxially grown P type semiconductor layers and an alkali metal or alkali metal-oxygen work-function-reducing activation layer. Also disclosed is a novel method for making a negative-electronaffinity transmission photocathode device. The method enables a photocathode device to be made by the serial epitaxial growth of p type layers of a II-VI or III-V semiconductor on a semiconductor substrate. The method provides for a virtually perfect lattice match between the semiconductor layers thereby increasing the efficiency of the photocathode by eliminating lattice defects which would otherwise exist at the interface between the transmitting material and the absorbing material.

Abstract translation: 公开了一种负电子亲和型透射型光电阴极器件。 该装置包括外延生长的P型半导体层和碱金属或碱金属 - 氧功能减少活化层。

公开(公告)号：US3900865A

公开(公告)日：1975-08-19

申请号：US20694771

申请日：1971-12-10

Applicant: GEN ELECTRIC

Inventor： SCHAEFER DONALD L

IPC: H01J1/34 ,  H01L27/14 ,  H01L29/161 ,  H01L31/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/049 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/119 ,  Y10S148/15 ,  Y10S148/169

Abstract: A photoemitter having a high quantum efficiency and a low work function for photoemission, i.e. photoelectric threshold, is formed by depositing a 10-100A film of a wide bandgap Group III-V compound, e.g. gallium phosphide, atop a 0.5-10 micron thick layer of a second Group III-V compound, e.g. gallium antimonide, having a bandgap matching the desired photoelectric threshold. The film surface then is treated with cesium (or cesium and oxygen) to reduce the surface work function of the composite structure to the desired photoelectric threshold. When the Group III-V layer forming the photoemitter is epitaxially grown atop an oriented substrate of a semiconductive material such as gallium arsenide having a bandgap wider than the bandgap of the overlying layer, the resulting photoemitter is transparent only in a range between the bandgap of the substrate and the bandgap of the overlying layer.

Abstract translation: 通过沉积宽带隙III-V族化合物的10-100A膜，形成具有高光子发射的高量子效率和低功函数的光电发射器，即光电阈值。 磷化镓，位于0.5-10微米厚的第二组III-V族化合物之上。 镓锑，具有与期望的光电阈值相匹配的带隙。 然后用铯（或铯和氧）处理膜表面，以将复合结构的表面功函数降低到期望的光电阈值。 当形成光电发射体的III-V族层在诸如砷化镓的半导体材料的取向衬底的顶层上外延生长时，其具有比上覆层的带隙宽的带隙，所得到的发光体仅在透光性的带隙 衬底和上覆层的带隙。

公开(公告)号：US3889143A

公开(公告)日：1975-06-10

申请号：US41829573

申请日：1973-11-23

Applicant: PHILIPS CORP

Inventor： GOWERS JONATHAN PAUL

IPC: H01J1/34 ,  H01J9/12 ,  H01J39/16 ,  H01J39/06

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/135

Abstract: A photocathode structure containing a photocathode material, comprising a plate of single crystal gallium indium phosphide having major surfaces and relative proportions of gallium and indium such that the lattice parameter thereof is substantially the same as that of said photocathode material, and, an epitaxial layer of photocathode material located on a first said major surface of said crystal, the thickness of said layer of photocathode material being of the order of the diffusion length of electrons therein and at least part of a second said major surface of the gallium indium phosphide plate being substantially free from contact by solid material.

公开(公告)号：US3867662A

公开(公告)日：1975-02-18

申请号：US40618373

申请日：1973-10-15

Applicant: RCA CORP

Inventor： ENDRIZ JOHN GUIRY

IPC: H01J1/34 ,  H01J39/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  H01J2201/3425

Abstract: A nonthermionic photoemissive material is provided on a major surface of a metal-like grating upon which light impinges.

Abstract translation: 非热电子发光材料设置在光入射的金属状光栅的主表面上。

公开(公告)号：US3814996A

公开(公告)日：1974-06-04

申请号：US35703773

申请日：1973-05-03

Applicant: US AIR FORCE

Inventor： ENSTROM R ,  FISHER D

IPC: H01J1/34 ,  H01L15/00

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode comprising a ternary alloy having the general formula:

Abstract translation: 包含具有以下通式的三元合金的光电阴极：Ga 1-x In x As WHEREIN X为0.15至0.21的整数。 阴极选择性地响应红外辐射，特别是在1.06微米波长水平。

公开(公告)号：US3696262A

公开(公告)日：1972-10-03

申请号：US3696262D

申请日：1970-01-19

Applicant: VARIAN ASSOCIATES

Inventor： ANTYPAS GEORGE A

IPC: B23K1/00 ,  H01J1/34 ,  H01J39/16 ,  H01J39/06

CPC classification number: B23K1/00 ,  H01J1/34 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S438/938

Abstract: A thin III-V photoemitter crystal having a thickness ranging from 1 micron to 5 microns as grown on a III-V substrate. The bandgap was determined in advance by proportioning the constituents of the crystal causing the peak of the response curve to occur at a predetermined energy and absorb incident photons of the desired wavelength. Due to the high quality of the crystal, the electron diffusion length thereof was comparable to the thickness allowing transmission optics to be employed. Lattice mismatch between the active crystal and the base was minimized by a transition layer, or a progression of transition layers, of intermediate composition. The presence of this strain relieving structure permitted the growth of the thin, high quality single crystals having a relatively long electron diffusion length. As a specific example, a 20 micron transition layer of GaAs.90Sb.10 was epitaxially grown on a GaAs substrate. A three micron active layer of GaAs.85Sb.15 was grown over the transition layers. This composition of the active layer exhibited a bandgap energy of 1.17 ev corresponding to an absorption wavelength of 1.06 microns.

Abstract translation: 在III-V基底上生长的厚度范围为1微米至5微米的薄III-V光发射体晶体。 通过使晶体的成分配比，使得响应曲线的峰值以预定能量发生并吸收所需波长的入射光子，预先确定带隙。 由于晶体的高质量，其电子扩散长度与允许使用透射光学器件的厚度相当。 通过中间组合物的过渡层或过渡层的进展使活性晶体和碱之间的晶格失配最小化。 该应变消除结构的存在允许具有相对长的电子扩散长度的薄的高质量单晶的生长。 作为具体实例，在GaAs衬底上外延生长GaAs.90Sb.10的20微米过渡层。 在过渡层上生长GaAs.85Sb.15的三微米有源层。 活性层的这种组成显示对应于1.06微米的吸收波长的1.17埃的带隙能。