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    Methods for forming high-K crystalline films and related devices
    112.
    发明授权
    Methods for forming high-K crystalline films and related devices 有权
    用于形成高K晶体膜和相关器件的方法

    公开(公告)号：US08809160B2

    公开(公告)日：2014-08-19

    申请号：US13334618

    申请日：2011-12-22

    Applicant: Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra G Malhotra ,  Xiangxin Rui

    Inventor： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra G Malhotra ,  Xiangxin Rui

    IPC: H01L21/20 ,  H01L21/31 ,  H01L21/02 ,  H01L49/02

    CPC classification number: H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    Abstract translation: 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

    Resistive-Switching Memory Elements Having Improved Switching Characteristics
    113.
    发明申请
    Resistive-Switching Memory Elements Having Improved Switching Characteristics 审中-公开
    具有改进的开关特性的电阻式开关存储元件

    公开(公告)号：US20140225056A1

    公开(公告)日：2014-08-14

    申请号：US14255749

    申请日：2014-04-17

    Applicant: Intermolecular, Inc.

    Inventor： Ronald J. Kuse ,  Tony P. Chiang ,  Imran Hashim

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/1616 ,  H01L45/1641

    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

    Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。

    No-contact wet processing tool with site isolation
    116.
    发明授权
    No-contact wet processing tool with site isolation 失效
    无接触式湿式加工工具，具有现场隔离

    公开(公告)号：US08783273B2

    公开(公告)日：2014-07-22

    申请号：US13081914

    申请日：2011-04-07

    Applicant: Rajesh Kelekar

    Inventor： Rajesh Kelekar

    IPC: B08B3/00

    CPC classification number: H01L21/67051 ,  H01L21/6708

    Abstract: Embodiments of the current invention describe a substrate processing tool. The substrate processing tool includes a housing defining a chamber, a substrate support, a container, and an impelling mechanism. The substrate support is coupled to the housing and configured to support a substrate within the chamber. The container is coupled to the housing within the chamber and configured to hold a liquid. The container is below and spaced apart from the substrate. The impelling mechanism is coupled to the housing and configured to apply a force to the liquid within the container such that an impelled portion of the liquid contacts a lower surface of the substrate.

    Abstract translation: 本发明的实施例描述了一种基板处理工具。 衬底处理工具包括限定腔室的壳体，衬底支撑件，容器和推进机构。 衬底支撑件联接到壳体并且构造成支撑腔室内的衬底。 容器联接到腔室内的壳体并且构造成保持液体。 容器位于底部并与衬底间隔开。 推动机构联接到壳体并且构造成向容器内的液体施加力，使得液体的推动部分接触基底的下表面。

    Methods to Improve Leakage for ZrO2 Based High K MIM Capacitor
    117.
    发明申请
    Methods to Improve Leakage for ZrO2 Based High K MIM Capacitor 审中-公开
    改善ZrO2基高K MIM电容漏电的方法

    公开(公告)号：US20140183696A1

    公开(公告)日：2014-07-03

    申请号：US13737138

    申请日：2013-01-09

    Applicant: INTERMOLECULAR INC.

    Inventor： Xiangxin Rui ,  Mitsuhiro Horikawa ,  Hiroyuki Ode ,  Karthik Ramani

    IPC: H01L49/02

    CPC classification number: H01L28/40 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

    Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive base layer and conductive metal oxide layer. A second electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the second electrode layer contains a conductive base layer and conductive metal oxide layer. In some embodiments, both the first electrode layer and the second electrode layer contain a conductive base layer and conductive metal oxide layer.

    Abstract translation: 形成金属绝缘体金属（MIM）DRAM电容器的第一电极层，其中第一电极层包含导电基底层和导电金属氧化物层。 形成金属绝缘体金属（MIM）DRAM电容器的第二电极层，其中第二电极层包含导电基底层和导电金属氧化物层。 在一些实施例中，第一电极层和第二电极层都包含导电基底层和导电金属氧化物层。

    Flourine-Stabilized Interface
    118.
    发明申请
    Flourine-Stabilized Interface 有权
    面粉稳定界面

    公开(公告)号：US20140183666A1

    公开(公告)日：2014-07-03

    申请号：US13728957

    申请日：2012-12-27

    Applicant: INTERMOLECULAR, INC.

    Inventor： Dipankar Pramanik

    IPC: H01L29/40 ,  H01L29/423

    CPC classification number: H01L29/401 ,  H01L21/28176 ,  H01L21/28202 ,  H01L29/42372 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/785 ,  H01L29/7866

    Abstract: Methods for forming an electronic device having a fluorine-stabilized semiconductor substrate surface are disclosed. In an exemplary embodiment, a layer of a high-κ dielectric material is formed together with a layer containing fluorine on a semiconductor substrate. Subsequent annealing causes the fluorine to migrate to the surface of the semiconductor (for example, silicon, germanium, or silicon-germanium). A thin interlayer of a semiconductor oxide may also be present at the semiconductor surface. The fluorine-containing layer can comprise F-containing WSix formed by ALD from WF6 and SiH4 precursor gases. A precise amount of F can be provided, sufficient to bind to substantially all of the dangling semiconductor atoms at the surface of the semiconductor substrate and sufficient to displace substantially all of the hydrogen atoms present at the surface of the semiconductor substrate.

    Abstract translation: 公开了一种形成具有氟稳定的半导体衬底表面的电子器件的方法。 在一个示例性实施例中， 介电材料与半导体衬底上含氟层一起形成。 随后的退火使氟迁移到半导体的表面（例如，硅，锗或硅 - 锗）。 半导体氧化物的薄中间层也可以存在于半导体表面。 含氟层可以包含由WF6的ALD和SiH 4前体气体形成的含F的WSix。 可以提供精确量的F，其足以与半导体衬底的表面上的基本上所有的悬空半导体原子结合，并且足以使基本上位于半导体衬底的表面处的所有氢原子置换。

    MoOx-Based Resistance Switching Materials
    119.
    发明申请
    MoOx-Based Resistance Switching Materials 有权
    基于MoOx的电阻开关材料

    公开(公告)号：US20140183432A1

    公开(公告)日：2014-07-03

    申请号：US13727958

    申请日：2012-12-27

    Applicant: INTERMOLECULAR, INC.

    Inventor： Sergey Barabash ,  Tony P. Chiang ,  Dipankar Pramanik

    IPC: H01L45/00

    CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1641

    Abstract: Molybdenum oxide can be used to form switching elements in a resistive memory device. The atomic ratio of oxygen to molybdenum can be between 2 and 3. The molybdenum oxide exists in various Magneli phases, such as Mo13O33, Mo4O11, Mo17O47, Mo8O23, or Mo9O26. An electric field can be established across the switching layers, for example, by applying a set or reset voltage. The electric field can cause movement of the oxygen charges, e.g., O2− ions, changing the composition profile of the switching layers, forming bistable states, including a high resistance state with MoO3 and a low resistance state with MoOx (x

    Abstract translation: 氧化钼可用于在电阻式存储器件中形成开关元件。 氧与钼的原子比可以在2和3之间。氧化钼存在于各种Magneli相中，例如Mo13O33，Mo4O11，Mo17O47，Mo8O23或Mo9O26。 可以跨开关层建立电场，例如通过施加置位或复位电压。 电场可导致氧电荷的移动，例如O 2离子，改变开关层的组成分布，形成双稳态，包括具有MoO 3的高电阻状态和具有MoO x（x <3）的低电阻状态）。

    Methods to improve leakage of high K materials
    120.
    发明授权
    Methods to improve leakage of high K materials 有权
    改善高K材料泄漏的方法

    公开(公告)号：US08766346B1

    公开(公告)日：2014-07-01

    申请号：US13720289

    申请日：2012-12-19

    Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc.

    Inventor： Xiangxin Rui ,  Sergey Barabash

    IPC: H01L29/92 ,  H01L49/02

    CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/56 ,  H01L28/60

    Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.

    Abstract translation: 降低DRAM金属 - 绝缘体 - 金属电容器中的漏电流的方法包括形成电容器堆叠，该电容器堆叠包括介于介电层和两个电极层中的至少一个之间的供氧体层。 在一些实施例中，介电层可以掺杂有氧供体掺杂剂。 氧供体材料为介电层提供氧气并降低氧空位的浓度，从而减少漏电流。

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