公开(公告)号：US20050152880A1

公开(公告)日：2005-07-14

申请号：US10754310

申请日：2004-01-09

Applicant: C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

Inventor： C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

IPC: A61K38/17 ,  A61K45/00 ,  A61L27/36 ,  A61L27/48 ,  C12N5/08

CPC classification number: A61L27/3683 ,  A61L27/3604 ,  A61L27/3608 ,  A61L27/48

Abstract: The present invention is directed to an intermediate composition for producing a muscle tissue matrix suitable for implantation in humans, comprising shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier, preferably a biocompatible acid solution, to form a muscle tissue slurry having a viscosity within the range of 1 centistoke to 20,000 centistokes measured at 25° C. In another aspect, the present invention is directed to a tissue implant comprising a human muscle tissue matrix.

Abstract translation: 本发明涉及一种用于生产适合于植入人体的肌肉组织基质的中间组合物，其包含与含水载体（优选生物相容性酸溶液）组合的切碎的同种异体人肌肉组织，以形成具有 在25℃下测量的粘度范围为1厘沲至20,000厘沲。另一方面，本发明涉及包含人肌肉组织基质的组织植入物。

公开(公告)号：US20050059264A1

公开(公告)日：2005-03-17

申请号：US10958772

申请日：2004-10-05

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert Mandal

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

公开(公告)号：US06800571B2

公开(公告)日：2004-10-05

申请号：US10322212

申请日：2002-12-17

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC: H01L2131

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

公开(公告)号：US06770556B2

公开(公告)日：2004-08-03

申请号：US10301019

申请日：2002-11-21

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L214763

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

公开(公告)号：US06689226B1

公开(公告)日：2004-02-10

申请号：US10088071

申请日：2002-03-20

Applicant: David Cheung ,  Philippe Rigal ,  Stéphane Bargues ,  Frédéric Favier ,  Jean-Louis Pascal

Inventor： David Cheung ,  Philippe Rigal ,  Stéphane Bargues ,  Frédéric Favier ,  Jean-Louis Pascal

IPC: C11D172

CPC classification number: G21F9/004 ,  C23G1/025 ,  C23G1/14

Abstract: The decontamination gel consists of one solution including: a) a thickening agent; b) an active agent of decontamination; in which the thickening agent (a), is an agent exclusively organic, chosen among water-soluble organic polymers. This gel is usable for radioactive decontamination of surfaces, especially metallic surfaces.

Abstract translation: 净化凝胶由一种溶液组成，包括：a）增稠剂; b）净化活性剂;其中增稠剂（a）是专门为有机的试剂，选自水溶性有机聚合物。 该凝胶可用于表面，特别是金属表面的放射性去污。

公开(公告)号：US06660663B1

公开(公告)日：2003-12-09

申请号：US09579819

申请日：2000-05-25

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC: H01L2131

CPC classification number: H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1031

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

Abstract translation: 一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫 或盖层邻近其它电介质层。 氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

公开(公告)号：US06660656B2

公开(公告)日：2003-12-09

申请号：US09957551

申请日：2001-09-19

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: C23C1640

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L2221/1031 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

Abstract translation: 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3，二甲基硅烷，（CH 3）2 SiH 2，1,1,3,3-四甲基 - 二硅氧烷，（CH 3）2 -SiH-O-SiH-（CH 3）2， 和一氧化二氮，N2O，在约10W至约150W的恒定RF功率水平，或占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

公开(公告)号：US06517913B1

公开(公告)日：2003-02-11

申请号：US09632502

申请日：2000-08-03

Applicant: David Cheung ,  Sebastien Raoux ,  Judy H. Huang ,  William N. Taylor, Jr. ,  Mark Fodor ,  Kevin Fairbairn

Inventor： David Cheung ,  Sebastien Raoux ,  Judy H. Huang ,  William N. Taylor, Jr. ,  Mark Fodor ,  Kevin Fairbairn

IPC: C23C1644

CPC classification number: H01J37/32844 ,  B01D45/06 ,  B01D53/32 ,  B01D53/46 ,  B01D2257/206 ,  B01D2259/818 ,  B01J19/08 ,  B01J19/088 ,  B01J19/126 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  H01J37/3244 ,  H01J2237/022 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/4667 ,  H05H2245/1215 ,  Y02C20/30 ,  Y02P70/605

Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.

Abstract translation: 用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。 该装置的一个实施例包括硅滤波器和等离子体产生系统。 等离子体发生系统从流出的PFC气体形成等离子体。 来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。 另一实施例包括等离子体产生系统和颗粒捕集和收集系统。 颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。 来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

公开(公告)号：US06511903B1

公开(公告)日：2003-01-28

申请号：US09465233

申请日：1999-12-16

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L214763

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

公开(公告)号：US06348725B1

公开(公告)日：2002-02-19

申请号：US09247381

申请日：1999-02-10

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: H01L2358

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.