Abstract:
Correcting light intensity for photolithography may include irradiating light having a first light intensity distribution through a photo mask having a mask pattern to a photosensitive layer on a wafer to form a first pattern corresponding to the mask pattern. A distribution of critical dimensions of the first pattern corresponding to the mask pattern may be determined, and a second light intensity distribution may be determined based on a relation between the first light intensity distribution and the distribution of critical dimensions of the first pattern. Then, light having the second light intensity distribution may be irradiated. Related systems are also discussed.
Abstract:
An apparatus and method for providing controlled heating, cooling and motion, in a device such as an active robotic automobile seat, are disclosed. A shape memory alloy (SMA) element, which changes shape upon application of a temperature change to the SMA element, is coupled to a thermoelectric device. Heat flows through the TED upon application of an electrical current through the TED. The apparatus is operable in one of a plurality of modes. In a first mode, a current is applied through the TED to cause a temperature change in the SMA element to change the shape of the SMA element. In a second mode, a current is applied to the TED to cause heat flow in a space adjacent to the apparatus. By controlling application of current to the TED, controlled motion, heating and cooling are achieved in the seat.
Abstract:
A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one particular example embodiment of the present invention, a semiconductor device includes a thyristor-based memory device that uses a shunt that effects a leakage current in the thyristor. The thyristor includes a capacitively-coupled control port and anode and cathode end portions. Each of the end portions has an emitter region and an adjacent base region. In one implementation, the current shunt is located between the emitter and base region of one of the end portions of the thyristor and is configured and arranged to shunt low-level current therebetween. In connection with an example embodiment, it has been discovered that shunting current in this manner improves the ability of the device to operate under adverse conditions that would, absent the shunt, result in inadvertent turn on, while keeping the standby current of the memory device to an acceptably low level.
Abstract:
A field effect transistor on an active region of a semiconductor substrate includes a vertically protruding thin-body portion of the semiconductor substrate and a vertically oriented gate electrode at least partially inside a cavity defined by opposing sidewalls of the vertically protruding portion of the substrate. The transistor further includes an insulating layer surrounding an upper portion of the vertically oriented gate electrode and a laterally oriented gate electrode on the insulating layer and connected to a top portion of the vertically oriented gate electrode. Accordingly, a T-shaped gate electrode is defined having a lateral portion on a top surface of a semiconductor substrate and having a vertical portion at least partially inside a cavity defined by opposing sidewalls of a vertically protruding portion of the substrate.
Abstract:
A circuit for detecting the amount of radio frequency power provided by an amplifier. The circuit contains an array of coupled transistors in two power amplifiers, and a log-detector circuit, all resident on a single semiconductor die. The main power amplifier contains the larger array of transistors to amplify the radio frequency signal for feeding to an antenna, and a secondary power amplifier contains a smaller array of transistors to provide a scaled output that is proportional to the amplified radio frequency signal and is used to control the main power amplifier. The log-detector circuit converts the signal from the secondary power amplifier to a full-wave rectified log-linear DC signal that is logarithmically proportional to the controlling signal. The DC signal output from the log-detector circuit is fed to the main power amp to control it.
Abstract:
A finite impulse response filter of 1:4 interpolation with 108 taps for outputting filter output data of 8 bits with respect to filter input data of 4 bits includes four shifting and storing unit of 27 bits for unifying bits of filter input data of 4 bits, which is 2's complement to shift and store the bi-unified input data, first selection unit for selecting any one of the input data stored in the four shifting and storing unit of 27 bits, address generating unit for generating addresses of lookup tables corresponding to each of a plurality of filter coefficients groups, first to fourth lookup table groups for generating filter outputs of each filter coefficients group, four accumulating unit for shifting the filter outputs of the filter coefficients groups respectively outputted in parallel from the first to the fourth lookup table groups, and second selection unit for serially converting the outputs from each of the four accumulators in accordance with filter coefficients groups.
Abstract:
Disclosed is a deflection yoke comprising: a fastening band of a ring shape assembled on an outer periphery of a neck portion in a coil separator by a fixing manner, provided for being extended and contracted; a pair of flanges bent and extended from both ends of the fastening band, on which a through hole is formed; a yoke clamp for generating fastening force by tightening of a bolt for passing through a pair of through holes, then being tightened by a nut; a bending portion projected on an outer side along the periphery of the fastening band, whose object contact plane for coming in contact with an outer periphery of the neck portion is divided into at least two or more.
Abstract:
A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to included at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.
Abstract:
A method of bypassing vocoders in a digital mobile communication system, comprising the step of appending bypass mode data to data transmitted from a plurality of mobile stations, the bypass mode data instructing the vocoders not to perform encoding/decoding operations, and the step of transmitting the resultant data. According to the present invention, the unnecessary encoding/decoding operations are omitted for a mobile to mobile communication. Therefore, the present invention has the effect of removing the delay time and enhancing the voice quality.
Abstract:
An apparatus for motion estimation with control part implemented by state transition diagram without adding delay circuits to processing elements, and capable of maintaining a regular data flow and easily implementing hardware to improve a power consume and speed is disclosed. The apparatus comprises a first and second storage parts for storing data; a measurement part for finding an absolute difference between the data; a step decision part for determining a minimum value; and a control part implemented by state transition diagram.