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    Adaptive enhanced corrective read based on write and read temperature
    111.
    发明授权
    Adaptive enhanced corrective read based on write and read temperature 有权

    公开(公告)号：US12242755B2

    公开(公告)日：2025-03-04

    申请号：US18434616

    申请日：2024-02-06

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Zhenming Zhou ,  Murong Lang ,  Ching-Huang Lu ,  Nagendra Prasad Ganesh Rao

    IPC: G06F3/06

    Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining whether a temperature offset value of the segment satisfies a threshold criterion associated with a program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.

    ENHANCING READ WINDOW BUDGET USING READ VERIFY
    112.
    发明申请
    ENHANCING READ WINDOW BUDGET USING READ VERIFY 有权

    公开(公告)号：US20250069675A1

    公开(公告)日：2025-02-27

    申请号：US18774642

    申请日：2024-07-16

    Applicant: Micron Technology, Inc.

    Inventor： Daniel Zhang ,  Yu-Chung Lien ,  Peng Zhang ,  Murong Lang ,  Zhenming Zhou

    IPC: G11C16/34 ,  G11C16/10 ,  G11C16/32

    Abstract: The disclosure configures a memory sub-system controller to use prior read verify operations to selectively apply enhancements to read window budgets (RWB). The controller receives a request to perform a memory operation on data stored in an individual memory component of a set of memory components. The controller accesses RWB tracking information associated with the individual memory component and determines that the tracking information associated with the individual memory component indicates a need for enhancing a RWB associated with the memory operation. The controller applies one or more enhancement processes to the individual memory component in response to determining that the tracking information associated with the individual memory component indicates the need for enhancing the RWB associated with the memory operation.

    REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS
    115.
    发明公开
    REFRESH OF NEIGHBORING MEMORY CELLS BASED ON READ STATUS 审中-公开

    公开(公告)号：US20240321350A1

    公开(公告)日：2024-09-26

    申请号：US18734724

    申请日：2024-06-05

    Applicant: Micron Technology, Inc.

    Inventor： Li-Te Chang ,  Murong Lang ,  Zhenming Zhou

    IPC: G11C13/00 ,  G11C11/56

    CPC classification number: G11C13/0033 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C11/5678

    Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a cross-point memory array includes memory cells. A media controller reads one or more first memory cells and determines a read status. The read status indicates an error when reading the first memory cells. In response to this error, the controller refreshes the first memory cells. The controller uses the read status to determine zero-to-one failures associated with the first memory cells. If a number of these failures exceeds a threshold, then a refresh is applied to neighboring memory cells of the first memory cells. The physical addresses for the neighboring memory cells are determined by the controller from the physical addresses for the first memory cells.

    ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR RESPECTIVE GROUPS OF WORDLINES IN A MEMORY SUB-SYSTEM
    116.
    发明公开
    ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR RESPECTIVE GROUPS OF WORDLINES IN A MEMORY SUB-SYSTEM 审中-公开

    公开(公告)号：US20240319881A1

    公开(公告)日：2024-09-26

    申请号：US18662940

    申请日：2024-05-13

    Applicant: Micron Technology, Inc.

    Inventor： Zhenming Zhou ,  Ching-Huang Lu ,  Murong Lang

    IPC: G06F3/06

    CPC classification number: G06F3/0611 ,  G06F3/0629 ,  G06F3/0679

    Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that the wordline is disposed on a first deck of the memory deck; responsive to determining that the wordline is disposed on the first deck, determining that the wordline is associated with a first group of wordlines associated with the first deck; and responsive to determining that the wordline is associated with the first group of wordlines associated with the first deck, performing the memory access operation on the set of cells connected to the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the first group of wordlines associated with the first deck.

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