摘要:
A connection method and connection apparatus for connecting long belt-shaped non-oriented resin films that are continuously advanced. A leading resin film and a trailing resin film can be connected while processing in a following step is continuously performed. The tip end of a trailing resin film (22) is joined and connected to a leading resin film {11), and then a portion, immediately after the connected position, of the leading resin film is heated to a predetermined temperature range and cut.
摘要:
When irradiating laser beam from the side face of the capillary array, an optical axis of the laser beam is inclined in vertical direction with respect to a plane face formed by the capillary array, thus, reflection light by the capillary array and returning light is prevented from entering into a laser beam source, thereby, instability of laser oscillation is eliminated.
摘要:
A nonvolatile semiconductor storage device includes a memory cell array and a reference cell providing a reference level with which data of the memory cell array is compared with so as to determine whether the data of the memory cell array is in an over-programmed state.
摘要:
First and second nodes are coupled together by a bus. The first node includes a detecting circuit for detecting the maximum data transfer capability of a connected node, at least two receiving circuits for receiving data from the bus, and a controlling circuit for selecting, based on an output signal from the detecting circuit and for optimizing the configuration of a receiving unit so as to bring the other of the receiving circuits to a stop. The second node includes a transmitting circuit for transmitting data to the bus and a notifying circuit for notifying the first node of its own maximum transfer capability.
摘要:
A semiconductor memory comprises a first cell (memory cell) including a charge storage layer, and a second cell including a charge storage layer and used with its set threshold value fixed. The threshold value of the second cell is generally apt to return to the initial state, i.e., initial threshold value, when damaged by baking. So, the initial threshold value is shifted to approach the threshold value to be set, as closely as possible. The data retention characteristic of the second cell (reference cell, redundancy memory cell, or OTP region cell) formed into the same construction in the same process as the first cell, can be considerably improved without unnecessarily increasing steps of manufacturing process.
摘要:
A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
摘要:
A flexible printed board is which has increased bonding strength, with which dispersion of the bonding strength can be prevented, the quality of which can be uniformed, with which curling can satisfactorily be prevented, which exhibits excellent dimensional stability and with which a precise circuit can satisfactorily be formed. A flexible printed board has a copper foil on which first and second polyimide-resin layers are sequentially laminated. The first polyimide layer made contact with the copper foil is formed by forming, turning into an imide, a polyimide precursor which contains polyamic acid components prepared owing to reactions of acid anhydride and amine and polyimide components prepared owing to reactions of acid anhydride and isocyanate.
摘要:
In order to realize notification of an incoming call at a client terminal utilizing an existing extension switch system, an exchange of the extension switch system is linked with a server of client terminals such that notification of an incoming call to an extension is made also at a client terminal. Further, whether an incoming call to a client terminal is permitted or not can be changed depending on whether the client terminal is in a log-in state or not. Still further, notification of an incoming call to a client terminal is made by reproducing an audio file or the like to realize a flexible extension call. Further, a response to an incoming call at a client terminal is managed by a timer such that, in case of time out, an ordinary extension rings. Still further, the server is made to have alternative recipient information such that notification of an incoming call is transferred via the server.
摘要:
A processing unit for carrying out specified data processing operations while performing read/write operations on data in an internal memory is coupled to a memory control unit for performing read/write operations on data in an external memory. Data exchange is carried out between the internal and external memories through the memory control unit. Data requiring a longer processing time or data frequently accessed is mapped into the internal memory in accordance with the data exchange, thereby improving overall memory system performance.
摘要:
A flexible printed circuit board that is intended to minimize curling is formed having a first polyimide-resin layer with a conductor pattern formed on one surface thereof and supporting that conductor pattern. A second polyimide-resin is formed on another surface of the conductor pattern and covers and protects the circuit of the conductor pattern. The polyimide-resin layers are chosen so that a difference between a coefficient of linear thermal expansion of the first polyimide-resin layer and the coefficient of linear thermal expansion of the second polyimide-resin layer is 3×10−6/K or smaller.