公开(公告)号：US20160343866A1

公开(公告)日：2016-11-24

申请号：US15150755

申请日：2016-05-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/24 ,  H01L29/04 ,  H01L21/4757 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L29/49 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/465 ,  H01L21/47573 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2227/323

Abstract: The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

Abstract translation: 通过抑制电特性的变化，能够提高包含氧化物半导体的晶体管的可靠性。 包括在半导体器件中的晶体管包括第一绝缘膜上的第一氧化物半导体膜，第一氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的第二氧化物半导体膜，以及在第一氧化物上的第二绝缘膜 半导体膜和第二氧化物半导体膜。 第一氧化物半导体膜包括与栅极绝缘膜接触的沟道区域，与第二绝缘膜接触的源极区域和与第二绝缘膜接触的漏极区域。 第二氧化物半导体膜具有比第一氧化物半导体膜更高的载流子密度。

公开(公告)号：US20160322395A1

公开(公告)日：2016-11-03

申请号：US15137087

申请日：2016-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yoshiaki OIKAWA

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  G06F3/041 ,  G06F3/044

CPC classification number: H01L29/78648 ,  G02F1/13624 ,  G02F1/1368 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78687 ,  H01L29/7869

Abstract: To provide a novel semiconductor device including an oxide semiconductor film. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second transistor includes a third oxide semiconductor film including a channel region, a source region, and a drain region over the second insulating film, a fourth insulating film over the channel region, a third gate electrode over the fourth insulating film, and the third insulating film over the source region and the drain region.

Abstract translation: 提供一种包括氧化物半导体膜的新型半导体器件。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管包括第一栅电极，第一栅电极上的第一绝缘膜，第一绝缘膜上的第一氧化物半导体膜，与第一氧化物半导体膜电连接的源电极，与第一栅电极电连接的漏电极 氧化物半导体膜，第一氧化物半导体膜上的第二绝缘膜，用作第二栅电极的第二氧化物半导体膜，在第二绝缘膜上方，以及在第二氧化物半导体膜上的第三绝缘膜。 第二晶体管包括在第二绝缘膜上包括沟道区，源区和漏区的第三氧化物半导体膜，沟道区上的第四绝缘膜，第四绝缘膜上的第三栅电极，第三绝缘膜上的第三绝缘膜 在源极区域和漏极区域上的绝缘膜。

公开(公告)号：US20160155803A1

公开(公告)日：2016-06-02

申请号：US14952459

申请日：2015-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Daisuke KUROSAKI

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a channel region and n-type regions in contact with the pair of electrodes. The channel region has fewer oxygen vacancies than the n-type regions.

Abstract translation: 在包括氧化物半导体膜的半导体器件中，电特性的变化受到抑制，可靠性提高。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及氧化物半导体膜上的一对电极。 氧化物半导体膜包括与该对电极接触的沟道区和n型区。 通道区域具有比n型区域少的氧空位。

公开(公告)号：US20160049428A1

公开(公告)日：2016-02-18

申请号：US14926795

申请日：2015-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Masami JINTYOU ,  Takumi SHIGENOBU ,  Naoto GOTO

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

公开(公告)号：US20160042990A1

公开(公告)日：2016-02-11

申请号：US14922556

申请日：2015-10-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takahiro IGUCHI

IPC: H01L21/768 ,  H01L27/12

CPC classification number: H01L21/76829 ,  G02F1/133345 ,  G02F1/136204 ,  G02F2001/136295 ,  G02F2201/50 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/3272 ,  H01L29/458 ,  H01L29/786 ,  H01L29/7869 ,  H01L51/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed.

Abstract translation: 为了提高包括诸如铜，铝，金或银的低电阻材料的半导体器件作为布线的可靠性。 提供一种半导体器件，包括电连接到半导体层的一对电极，该半导体层具有层叠结构，该层叠层结构包括与半导体层接触的第一保护层和含有低电阻材料的导电层并且接触 与第一保护层。 导电层的顶表面覆盖有用作处理导电层的掩模的第二保护层。 导电层的侧表面被第三保护层覆盖。 通过这种结构，抑制了含有低电阻材料的一对导电层的构成元素进入或扩散到半导体层中。

公开(公告)号：US20160005873A1

公开(公告)日：2016-01-07

申请号：US14755886

申请日：2015-06-30

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Masami JINTYOU ,  Takahiro IGUCHI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78696

Abstract: A change in electrical characteristics can be suppressed and reliability can be improved in a semiconductor device including a transistor having an oxide semiconductor. A semiconductor device includes a transistor, and the transistor includes an oxide semiconductor film over a first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a conductive film in contact with a side surface of the gate electrode in a channel length direction, and a second insulating film over the oxide semiconductor film. The oxide semiconductor film includes a first region overlapping with the gate electrode, a second region overlapping with the conductive film, and a third region in contact with the second insulating film. The third region includes a region having higher impurity element concentration than the second region.

Abstract translation: 在包括具有氧化物半导体的晶体管的半导体器件中，可以抑制电特性的改变并且可以提高可靠性。 半导体器件包括晶体管，并且晶体管包括在第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的栅电极，与侧绝缘膜的侧表面接触的导电膜 沟道长度方向上的栅极电极和氧化物半导体膜上的第二绝缘膜。 氧化物半导体膜包括与栅电极重叠的第一区域，与导电膜重叠的第二区域和与第二绝缘膜接触的第三区域。 第三区域包括杂质元素浓度高于第二区域的区域。

公开(公告)号：US20150263141A1

公开(公告)日：2015-09-17

申请号：US14645781

申请日：2015-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/66 ,  H01L21/385 ,  H01L21/441 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L21/4757 ,  H01L29/786 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78621 ,  H01L29/7869

Abstract: Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

Abstract translation: 本发明提供一种半导体装置的制造方法，其防止电特性变化，提高其可靠性。 在该方法中，在氧化物半导体膜上形成绝缘膜，在绝缘膜上形成缓冲膜，向缓冲膜和绝缘膜添加氧，在氧气的缓冲膜上形成导电膜 并且使用导电膜作为掩模将杂质元素添加到氧化物半导体膜。 可以在将杂质元素添加到氧化物半导体膜之后形成含有氢并与氧化物半导体膜重叠的绝缘膜。

公开(公告)号：US20150214343A1

公开(公告)日：2015-07-30

申请号：US14682376

申请日：2015-04-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Yamato AIHARA ,  Katsuaki TOCHIBAYASHI ,  Toru ARAKAWA

IPC: H01L29/66 ,  H01L21/4757 ,  H01L29/786 ,  H01L29/45 ,  H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  H01L21/441

CPC classification number: H01L29/66969 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/441 ,  H01L21/47573 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

Abstract: An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

Abstract translation: 本发明的目的是提供一种制造包括高性能和高可靠性晶体管的半导体器件的技术。 在氧化物半导体层和导电层之间形成由导电层形成布线层时保护氧化物半导体层的保护导电膜，并且进行具有两个步骤的蚀刻工艺。 在第一蚀刻步骤中，在保护导电膜比导电层蚀刻少的条件下进行蚀刻，并且导电层对保护导电膜的蚀刻选择性高。 在第二蚀刻步骤中，在保护导电膜比氧化物半导体层更容易蚀刻的条件下进行蚀刻，并且保护性导电膜对氧化物半导体层的蚀刻选择性高。

公开(公告)号：US20150084043A1

公开(公告)日：2015-03-26

申请号：US14486089

申请日：2014-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

Abstract translation: 在包括氧化物半导体膜的半导体器件中，氧化物半导体膜中的缺陷减少。 提高了包括氧化物半导体膜的半导体器件的电特性。 提高了包括氧化物半导体膜的半导体器件的可靠性。 一种包括氧化物半导体层的半导体器件; 与氧化物半导体层接触的金属氧化物层，所述金属氧化物层包含In-M氧化物（M为Ti，Ga，Y，Zr，La，Ce，Nd或Hf）; 和与金属氧化物层接触的导电层，提供包括铜，铝，金或银的导电层。 在半导体器件中，y /（x + y）大于或等于0.75且小于1，其中包含在金属氧化物层中的In与M的原子比为In：M = x：y。

公开(公告)号：US20150014680A1

公开(公告)日：2015-01-15

申请号：US14323341

申请日：2014-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Takahiro SATO ,  Masami JINTYOU

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G06F3/041 ,  G06F2203/04103 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Abstract translation: 提供了包括晶体管和连接部分的半导体器件。 晶体管包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜和与栅电极重叠的位置，电连接到氧化物半导体膜的源极和漏极; 连接部包括与形成有栅电极的表面相同的表面上的第一布线，与形成有源极和漏极的表面相同的表面上的第二布线，以及连接第一布线的第一布线 接线和第二个接线。 第二配线的上端部和下端部之间的距离比源电极和漏电极的上端部与下端部的距离长。