公开(公告)号：US07723218B2

公开(公告)日：2010-05-25

申请号：US11102727

申请日：2005-04-11

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32477 ,  C23C16/4401 ,  C23C16/5096 ,  Y10S438/905

摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

摘要翻译： 在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

公开(公告)号：US07719014B2

公开(公告)日：2010-05-18

申请号：US12182236

申请日：2008-07-30

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L29/18

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

摘要翻译： 提供了具有高清晰度，高开口率和高可靠性的发光器件。 本发明通过有意形成层叠部分，利用红色，绿色和蓝色发光的全色平板显示器实现了高清晰度和高开口率，其中相邻发光元件的不同有机化合物层的部分彼此重叠 ，而不依赖于形成有机化合物层的方法或成膜精度。

公开(公告)号：US07629617B2

公开(公告)日：2009-12-08

申请号：US11585954

申请日：2006-10-25

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L27/15

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5284 ,  H01L2227/323

摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

摘要翻译： 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。

公开(公告)号：US07465647B2

公开(公告)日：2008-12-16

申请号：US11896509

申请日：2007-09-04

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Yohei Kanno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Yohei Kanno

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L21/6835 ,  G06K19/0704 ,  G06K19/0723 ,  G06K19/07703 ,  G06K19/07718 ,  G06K19/07745 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07758 ,  G06K19/07779 ,  G06K19/07781 ,  G06K19/07783 ,  H01L23/49855 ,  H01L2221/68318 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/45147 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/00011

摘要： With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip.A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.

公开(公告)号：US07423293B2

公开(公告)日：2008-09-09

申请号：US10810675

申请日：2004-03-29

申请人： Hirokazu Yamagata ,  Shunpei Yamazaki ,  Toru Takayama

发明人： Hirokazu Yamagata ,  Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/20

CPC分类号： H01L27/3246 ,  H01L27/3258 ,  H01L51/50 ,  H01L51/5206 ,  H01L51/524 ,  H01L51/56 ,  H01L2251/55

摘要： A method of manufacturing a high quality light emitting device is provided, in which light emitting elements having long life are manufactured by using light emitting elements having a structure that deteriorates less easily than conventional structures. After forming a bank, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous medium, performing leveling and removal of debris. An insulating film is formed covering the bank and the anode, unevenness on the anode surface is covered, and the balance between the amount of holes and electrons injected into an organic compound layer can be regulated.

摘要翻译： 提供了一种制造高质量发光器件的方法，其中通过使用具有比常规结构更不易劣化的结构的发光元件来制造具有长寿命的发光元件。 在形成堤之后，使用基于PVA（聚乙烯醇）的多孔介质擦拭暴露的阳极表面，进行平整和去除碎屑。 形成覆盖堤和阳极的绝缘膜，阳极表面上的凹凸被覆盖，并且可以调节注入到有机化合物层中的空穴和电子的量之间的平衡。

公开(公告)号：US07422934B2

公开(公告)日：2008-09-09

申请号：US11465360

申请日：2006-08-17

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/32 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L51/5284 ,  H01L2029/7863

摘要： There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.

摘要翻译： 提供了廉价的发光装置和使用它的电子仪器。 在本发明中，与晶体管的制造有关的光刻步骤减少，从而提高了发光器件的产量，并缩短了其制造周期。 特征在于，栅电极由多层导电膜形成，通过使用蚀刻时的选择比，调节在有源层中形成的杂质区域的浓度。

公开(公告)号：US07411259B2

公开(公告)日：2008-08-12

申请号：US11710897

申请日：2007-02-26

申请人： Shunpei Yamazaki ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L23/52 ,  H01L29/786

CPC分类号： H01L29/4908 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.

摘要翻译： 本发明的目的是实现具有高TFT特性的半导体器件。 在制造有源矩阵显示装置时，通过在掺杂杂质离子时防止氧离子渗透到电极中，使电极材料的电阻率保持较低。 可以获得具有低电阻率的显示装置。

公开(公告)号：US20080014666A1

公开(公告)日：2008-01-17

申请号：US11825678

申请日：2007-07-09

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa，薄膜的薄膜应力由-1×10 10 /秒±2至1×10 10 dyn / cm 2进行， / SUP>。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US20070298555A1

公开(公告)日：2007-12-27

申请号：US11882907

申请日：2007-08-07

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78678

摘要： An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing an inert gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.

摘要翻译： 目的是减少高温（等于或高于600℃）的热处理工艺步骤，达到较低的温度（等于或小于600℃）的工艺，并简化工艺步骤并增加 在制造半导体器件的方法中的吞吐量。 利用本发明，在具有晶体结构的第一半导体膜上形成阻挡层，第二半导体膜和含有惰性气体元件的第三半导体膜。 进行吸气，并且包含在第一半导体膜中的金属元素通过热处理工艺通过阻挡层和第二半导体膜，并移动到第三半导体膜。 然后去除第二半导体膜和第三半导体膜，其中阻挡层用作蚀刻停止层。

公开(公告)号：US20070290219A1

公开(公告)日：2007-12-20

申请号：US11890494

申请日：2007-08-07

申请人： Hirokazu Yamagata ,  Shunpei Yamazaki ,  Toru Takayama

发明人： Hirokazu Yamagata ,  Shunpei Yamazaki ,  Toru Takayama

IPC分类号： H01L29/12 ,  H01L21/02

CPC分类号： H01L51/524 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/0003 ,  H01L51/5056 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5253 ,  H01L51/56 ,  Y10S438/976

摘要： A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.

摘要翻译： 提供了一种高品质的发光装置，其具有不含常规问题的持久发光元件，因为能够降低劣化的结构，并且提供了制造发光器件的方法。 在形成堤之后，使用基于PVA（聚乙烯醇）的多孔物质等将暴露的阳极表面擦拭以使表面平整并从表面除去灰尘。 在TFT的层间绝缘膜和阳极之间形成绝缘膜。 或者，在表面改性用TFT上的层间绝缘膜的表面进行等离子体处理。