公开(公告)号：US11915929B2

公开(公告)日：2024-02-27

申请号：US17873369

申请日：2022-07-26

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Shaoren Deng ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/3213

CPC classification number: H01L21/02636 ,  H01L21/0262 ,  H01L21/0273 ,  H01L21/32136 ,  H01L21/32139

Abstract: Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface are disclosed. The methods may include: contacting the substrate with a plasma generated from a hydrogen containing gas, selectively forming a passivation film from vapor phase reactants on the first dielectric surface while leaving the second metallic surface free from the passivation film, and selectively depositing the target film from vapor phase reactants on the second metallic surface relative to the passivation film.

公开(公告)号：US20240063053A1

公开(公告)日：2024-02-22

申请号：US18235013

申请日：2023-08-17

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim

IPC: H01L21/764 ,  H01J37/32 ,  H01L21/762 ,  H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/04

CPC classification number: H01L21/764 ,  H01J37/32137 ,  H01L21/76224 ,  H01L21/02274 ,  C23C16/345 ,  C23C16/505 ,  C23C16/045 ,  H01J2237/332

Abstract: A method of processing a substrate is disclosed, the method including: providing the substrate where a gap is formed on a surface thereof to a reaction space, performing a deposition step of depositing a flowable film in the gap of the substrate while supplying a precursor and a reactant gas to the reaction space, performing a plasma treatment step to the flowable film so that the flowability of the flowable film in an upper region of the gap decreases compared to a lower region of the gap, and repeating the deposition step of depositing the flowable film and the plasma treatment step to the flowable film, to form an air-gap within the gap.

公开(公告)号：US20240063014A1

公开(公告)日：2024-02-22

申请号：US18232990

申请日：2023-08-11

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  JuHyuk Park ,  SungHa Choi ,  KiHun Kim

IPC: H01L21/02

CPC classification number: H01L21/02252 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02326

Abstract: Provided is a method of efficiently forming a dense and solid silicon oxide film on a substrate and a method of manufacturing a semiconductor device by using the same. The formation method comprises: providing a substrate to a reaction chamber; forming a flowable silicon nitride film on the substrate; converting the flowable silicon nitride film into a flowable silicon oxide film; densifying the flowable silicon oxide film; and post-treating the densified silicon oxide film with an inert gas plasma to increase a density of the silicon oxide film.

公开(公告)号：US20240060174A1

公开(公告)日：2024-02-22

申请号：US18234549

申请日：2023-08-16

Applicant: ASM IP Holding B.V.

Inventor： Makoto Igarashi ,  Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Ling Chi Hwang

IPC: C23C16/04

CPC classification number: C23C16/045

Abstract: Methods and systems of forming material within a recess are disclosed. Exemplary methods include forming a flowable material at a first temperature (T1) within a reaction chamber, the flowable material forming deposited material within the recess, treating the deposited material to form treated material, and heating the substrate including the treated material at a second temperature (T2) to remove a portion of the deposited material.

公开(公告)号：US20240055279A1

公开(公告)日：2024-02-15

申请号：US18496081

申请日：2023-10-27

Applicant: ASM IP Holding B.V.

Inventor： Shiva K.T. Rajavelu Muralidhar ,  Sam Kim

IPC: H01L21/67 ,  H01L21/324 ,  H01K1/14 ,  H05B3/00 ,  F27B17/00 ,  H01K7/00

CPC classification number: H01L21/67115 ,  H01L21/324 ,  H01K1/14 ,  H05B3/0047 ,  F27B17/0025 ,  H01K7/00 ,  F27D5/0037

Abstract: An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the arrays includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the arrays includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the arrays has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

公开(公告)号：US11901179B2

公开(公告)日：2024-02-13

申请号：US17509290

申请日：2021-10-25

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Robert Vyne

IPC: H01L21/306 ,  H01L21/02 ,  H01J37/32 ,  C23C16/24 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/02532 ,  C23C16/0245 ,  C23C16/24 ,  C23C16/455 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/0262 ,  H01L21/02576 ,  H01L21/02579 ,  H01J37/32357 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described.

公开(公告)号：US20240019879A1

公开(公告)日：2024-01-18

申请号：US18351150

申请日：2023-07-12

Applicant: ASM IP Holding, B.V.

Inventor： Glenn Holbrook

IPC: G05D7/06

CPC classification number: G05D7/0647

Abstract: A flow control arrangement is provided including a housing seating inlet and outlet conduits is provided. An isolation valve is arranged within the housing and is fluidly coupled to the inlet conduit. A first flow switch with a first shutoff trigger is arranged within the housing and fluidly couples the isolation valve to the outlet conduit. A second flow switch with a second shutoff trigger is arranged outside of the housing and is fluidly separated from the first flow switch. A controller operably connects the first and second flow switches to the isolation valve to close the isolation valve when (a) flow rate of a first fluid traversing the first flow switch is greater than the first shutoff trigger, or (b) flow rate of a second fluid traversing the second flow switch is less than the second shutoff trigger. Semiconductor processing systems and flow control methods are also described.

公开(公告)号：US20240014033A1

公开(公告)日：2024-01-11

申请号：US18218221

申请日：2023-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hiroshi Kou ,  Hideaki Fukuda

IPC: H01L21/02 ,  C23C16/34

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/345 ,  H01L21/0228 ,  H01L21/02274

Abstract: Methods of depositing material onto a surface of a substrate. Exemplary methods include flowing a gas-phase precursor within the reaction chamber, condensing the precursor onto the surface of the substrate to form condensed material, and curing the condensed material to transform the condensed material to cured material. The step of curing can be a plasma process and can include use of a reactant.

公开(公告)号：US20240003009A1

公开(公告)日：2024-01-04

申请号：US18346608

申请日：2023-07-03

Applicant: ASM IP Holding, B.V

Inventor： Ivo Raaijmakers ,  Theodorus G.M. Oosterlaken

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67

CPC classification number: C23C16/45553 ,  C23C16/4412 ,  H01L21/67017 ,  C23C16/45544 ,  C23C16/45591

Abstract: A semiconductor processing apparatus for processing a plurality of substrates is provided. In a preferred embodiment, the apparatus comprises a reaction chamber. The reaction chamber comprises a reaction space for receiving a substrate boat constructed and arranged for holding the plurality of substrates. The rection chamber further comprise a gas distributor for providing gas into the reaction space and a gas exhaust for removing gas from the reaction space. The boat, the gas distributor and the gas exhaust are constructed and arranged to at least partially enclose the substrates in the boat and to form a gas flow path, in use, from the gas distributor to the gas exhaust, wherein the gas flow path is substantially being directed in between the substrates.

公开(公告)号：US20230420227A1

公开(公告)日：2023-12-28

申请号：US18367200

申请日：2023-09-12

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  H01J37/32577 ,  H01J37/32935 ,  H01J37/32724 ,  H01J37/32082

Abstract: A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.