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    METHOD FOR PRODUCING HEAT CONDUCTIVE MEMBER AND HEAT EXCHANGER
    122.
    发明公开
    METHOD FOR PRODUCING HEAT CONDUCTIVE MEMBER AND HEAT EXCHANGER 审中-公开

    公开(公告)号：US20230302524A1

    公开(公告)日：2023-09-28

    申请号：US18156569

    申请日：2023-01-19

    Applicant: NGK Insulators, Ltd.

    Inventor： Makoto YOSHIHARA ,  Tatsuo KAWAGUCHI

    IPC: B21D53/06 ,  F28F1/40 ,  F28F9/00

    CPC classification number: B21D53/06 ,  F28F1/40 ,  F28F9/005

    Abstract: A method for producing a heat conductive member includes the steps of: preparing a hollow type heat recovery member having: an inner peripheral surface and an outer peripheral surface in an axial direction; and a first end face and a second end face in a direction orthogonal to the axial direction; inserting an inner cylindrical member into a hollow portion formed in an inner region of the inner peripheral surface; and subjecting the inner cylindrical member to plastic working, and fitting at least a part of the inner cylindrical member to at least a part of one or more selected from the inner peripheral surface, the first end face, and the second end face of the heat recovery member.

    METHOD AND DEVICE FOR PRODUCING SHRINK-FITTED MEMBER
    123.
    发明公开
    METHOD AND DEVICE FOR PRODUCING SHRINK-FITTED MEMBER 审中-公开

    公开(公告)号：US20230302523A1

    公开(公告)日：2023-09-28

    申请号：US18151642

    申请日：2023-01-09

    Applicant: NGK Insulators, Ltd.

    Inventor： Fumitaka TAKEUCHI ,  Shuhei KUNO ,  Seiya SAWADA

    IPC: B21D53/06 ,  F28F21/04 ,  F28F21/08

    CPC classification number: B21D53/06 ,  F28F21/04 ,  F28F21/081 ,  F28F2275/00

    Abstract: A method for producing a shrink-fitted member by arranging a hollow type pillar shaped ceramic body inside a metal pipe and shrink-fitting them, the hollow type pillar shaped ceramic body including: an outer peripheral surface and an inner peripheral surface in a direction substantially parallel to an axial direction; and a first end face and a second end face in a direction substantially perpendicular to the axial direction. The method includes arranging the hollow type pillar shaped ceramic body inside the metal pipe while gripping the hollow type pillar shaped ceramic body using a chuck mechanism.

    METHOD OF MANUFACTURING Si-SiC-BASED COMPOSITE STRUCTURE
    126.
    发明公开
    METHOD OF MANUFACTURING Si-SiC-BASED COMPOSITE STRUCTURE 审中-公开

    公开(公告)号：US20230298882A1

    公开(公告)日：2023-09-21

    申请号：US18166049

    申请日：2023-02-08

    Applicant: NGK Insulators, Ltd. ,  NGKADREC Company

    Inventor： Sora GOTO ,  Shuhei KUNO ,  Daisuke KIMURA ,  Hiroomi MATSUBA

    IPC: H01L21/02

    CPC classification number: H01L21/02167 ,  H01L21/02255

    Abstract: Provided is a method of manufacturing a Si—SiC-based composite structure capable of improving the manufacturing efficiency of the Si—SiC-based composite structure. The method of manufacturing a Si—SiC-based composite structure includes a step of impregnating a molten metal containing Si into a molded body containing SiC by heating a supply body containing Si under a state in which the supply body is in contact with the molded body, wherein a contact portion of the supply body with the molded body is a part of a surface of the supply body facing the molded body.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
    127.
    发明公开
    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开

    公开(公告)号：US20230290622A1

    公开(公告)日：2023-09-14

    申请号：US18158021

    申请日：2023-01-23

    Applicant: NGK Insulators, Ltd.

    Inventor： Hiroshi TAKEBAYASHI ,  Tatsuya KUNO ,  Seiya INOUE

    IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

    CPC classification number: H01J37/32724 ,  H01J37/32642 ,  H01L21/6833 ,  H01L21/68721 ,  H01J2237/002 ,  H01J2237/334 ,  H01J2237/2007

    Abstract: A member for a semiconductor manufacturing apparatus, includes: a base substrate that has a wafer-placement-table support and a focus-ring-placement-table support; a focus-ring placement table that is joined to the focus-ring-placement-table support; a wafer placement table that is separate from the focus-ring placement table, that overlaps an inner peripheral portion of the focus-ring placement table in plan view, and that is joined to the inner peripheral portion of the focus-ring placement table and to the wafer-placement-table support; an internal space that is surrounded by a lower surface of the wafer placement table, an outer peripheral surface of the wafer-placement-table support, an inner peripheral surface of the focus-ring placement table, and an upper surface of the focus-ring-placement-table support; and a communication path that is provided at the base substrate and that causes the internal space and an outside of the base substrate to communicate with each other.

    Beryllium copper alloy ring and method for producing same
    129.
    发明授权
    Beryllium copper alloy ring and method for producing same 有权

    公开(公告)号：US11746404B2

    公开(公告)日：2023-09-05

    申请号：US17203965

    申请日：2021-03-17

    Applicant: NGK INSULATORS, LTD.

    Inventor： Kensuke Ishii

    IPC: C22F1/08 ,  B21K1/76 ,  C22C9/00

    CPC classification number: C22F1/08 ,  B21K1/761 ,  C22C9/00

    Abstract: Provided is a method for producing a beryllium copper alloy ring including: providing a columnar forged material made of a beryllium copper alloy, opening a hole from a center of an upper surface of the columnar forged material in a direction parallel to a central axis of the columnar forged material to make a ring intermediate product, performing ring forging on the ring intermediate product, thereby expanding the hole such that a reduction ratio of 63% or more is achieved to make a ring-forged product, wherein the reduction ratio is specified by the following expression: P=100×(T−t)/T, wherein P represents the reduction ratio (%), T represents a thickness (mm) of the ring intermediate product, and t represents a thickness (mm) of the ring-forged product, and performing a solution annealing and a precipitation hardening on the ring-forged product to make the beryllium copper alloy ring.

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