公开(公告)号：US11075324B2

公开(公告)日：2021-07-27

申请号：US16334411

申请日：2017-09-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Georg Dirscherl ,  Marcus Adam ,  Guido Kickelbick

IPC: H01L21/00 ,  H01L33/50 ,  C09K11/02 ,  C09K11/70 ,  C08L83/04 ,  C09K11/62 ,  C08G77/00 ,  B82Y20/00

Abstract: A method of producing an outcoupling element for an optoelectronic component includes A) providing quantum dots each having a core made of a semiconductor material, B) applying an inorganic or a phosphonate-containing ligand shell on a respective core of the quantum dots, and C) introducing the quantum dots with the ligand shell into a matrix material, wherein introducibility of the quantum dots with the ligand shell is facilitated compared to the quantum dots produced in step A), and the outcoupling element is transparent for radiation from the red and/or IR region.

公开(公告)号：US11069663B2

公开(公告)日：2021-07-20

申请号：US16468085

申请日：2018-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plößl ,  Siegfried Herrmann ,  Martin Rudolf Behringer ,  Frank Singer ,  Thomas Schwarz ,  Alexander F. Pfeuffer

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/00

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

公开(公告)号：US11056045B2

公开(公告)日：2021-07-06

申请号：US16487623

申请日：2018-03-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten Frank Baumheinrich

IPC: G09G3/32

Abstract: An arrangement for operating radiation emitting devices includes a plurality of radiation emitting devices each having a first capacitance, a driver circuit that supplies the devices with electrical energy, and a compensation structure having a variable second capacitance corresponding to each device and means for adjusting the respective second capacitance, the compensation structure being connected to the device such that a total capacitance assigned to a device and dependent on the first capacitance can be adjusted by the second capacitance.

公开(公告)号：US11043791B2

公开(公告)日：2021-06-22

申请号：US16612857

申请日：2018-06-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Fuchs

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/323 ,  H01S5/40 ,  H01S5/30

Abstract: An edge emitting semiconductor laser and a method for operating an edge emitting semiconductor laser are disclosed. In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having an active zone configured to generate laser radiation from the material system AlInGaAs, a facet on the semiconductor layer sequence configured to couple-out and/or reflect the laser radiation and a protective layer sequence directly on the facet protecting the facet from damage, the protective layer sequence including a monocrystalline starting layer of a group 12 group 16 material, an intermediate layer of Si and at least one finishing layer consisting essentially of Al, Si and/or Ta and of O and optionally of N, so that the finishing layer is of a different material system than the starting layer and the intermediate layer, wherein the intermediate layer is oxidized on a side facing the finishing layer, and wherein the protective layer is arranged in a direction away from the semiconductor layer sequence in the indicated order.

公开(公告)号：US11031534B2

公开(公告)日：2021-06-08

申请号：US16471249

申请日：2018-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Christian Müller

IPC: H01L33/62 ,  H01L29/06 ,  H01L33/02

Abstract: A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.

公开(公告)号：US11018281B2

公开(公告)日：2021-05-25

申请号：US16313945

申请日：2017-06-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Werner Bergbauer ,  Joachim Hertkorn ,  Alexander Walter

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/14 ,  H01L33/00

Abstract: An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.

公开(公告)号：US11018278B2

公开(公告)日：2021-05-25

申请号：US16488540

申请日：2018-02-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Hertkorn ,  Marcus Eichfelder

IPC: H01L33/14 ,  H01L31/0352 ,  H01L31/0304 ,  H01L33/32

Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.

公开(公告)号：US11011887B2

公开(公告)日：2021-05-18

申请号：US16471330

申请日：2017-12-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/028 ,  H01S5/20

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.

公开(公告)号：US11011504B2

公开(公告)日：2021-05-18

申请号：US16253921

申请日：2019-01-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Oszinda ,  Ban Loong Chris Ng

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L25/16 ,  H01L33/20

Abstract: An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region and a second semiconductor region, a recess extending through the first semiconductor region, the recess having a bottom surface, where the second semiconductor region is exposed, and a blocking element arranged on the bottom surface, wherein the at least one recess has a first width and a second width parallel to the main extension plane of the semiconductor body, and the first width is smaller than the second width.

公开(公告)号：US11004834B2

公开(公告)日：2021-05-11

申请号：US16484459

申请日：2018-02-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Farhang Ghasemi Afshar ,  Ralph Wirth

IPC: H01L25/075 ,  H01L27/15 ,  H01L33/50 ,  H01L33/52 ,  H01L33/60

Abstract: An LED unit comprises a substrate and a first LED chip. The first LED chip may include a first light-emitting surface arranged on the substrate in such a way that light emitted from the first LED chip radiates in a direction of radiation of the LED unit. The LED unit includes a second LED chip comprising a second light-emitting surface and arranged above the first LED chip in such a way that the second LED chip at least partially covers the first LED chip and radiates light emitted from the second LED chip in the direction of radiation of the LED unit. The LED unit comprises a first conversion layer at least partially covering the first light-emitting surface and/or at least partially laterally surrounding the first LED chip. A second conversion layer at least partially covers the second LED chip.