公开(公告)号：US11629402B2

公开(公告)日：2023-04-18

申请号：US17184085

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Jinrui Guo ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40 ,  C23C16/24 ,  C23C16/32

Abstract: Embodiments of the present disclosure generally relate to processing an optical workpiece containing grating structures on a substrate by deposition processes, such as atomic layer deposition (ALD). In one or more embodiments, a method for processing an optical workpiece includes positioning a substrate containing a first layer within a processing chamber, where the first layer contains grating structures separated by trenches formed in the first layer, and each of the grating structures has an initial critical dimension, and depositing a second layer on at least the sidewalls of the grating structures by ALD to produce corrected grating structures separated by the trenches, where each of the corrected grating structures has a corrected critical dimension greater than the initial critical dimension.

公开(公告)号：US11608558B2

公开(公告)日：2023-03-21

申请号：US16843347

申请日：2020-04-08

Applicant: Applied Materials, Inc.

Inventor： Karl J. Armstrong ,  Ludovic Godet ,  Brian Alexander Cohen ,  Wayne McMillan ,  James D. Strassner ,  Benjamin Riordon

IPC: C23C16/40 ,  C23C14/04 ,  C23C16/04 ,  C23C16/455 ,  C23C14/08 ,  C23C14/06 ,  C23C14/14 ,  C23C16/24 ,  C23C16/34 ,  H01L21/677 ,  C23C16/56 ,  G02B6/132

Abstract: Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

公开(公告)号：US11372149B2

公开(公告)日：2022-06-28

申请号：US16662086

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Ludovic Godet

IPC: G02B6/00 ,  F21V8/00

Abstract: An apparatus with a grating structure and a method for forming the same are disclosed. The grating structure includes forming a wedge-shaped structure in a grating layer using a grayscale resist and photo lithography. A plurality of channels is formed in the grating layer to define slanted grating structures therein. The wedge-shaped structure and the slanted grating structures are formed using a selective etch process.

公开(公告)号：US11262662B2

公开(公告)日：2022-03-01

申请号：US17062326

申请日：2020-10-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Ludovic Godet ,  Kyle M. Hanson ,  Robert B. Moore

IPC: G03F7/20 ,  G03F7/38 ,  H01L21/67

Abstract: Implementations described herein relate to a platform apparatus for post exposure processing. In one implementation, a platform apparatus includes a plumbing module and a process module. The process module further includes a central region having a robot disposed therein, and a plurality of process stations disposed about the central region and sharing the plumbing module. Each process station includes a process chamber and a post process chamber in a stacked arrangement. The process chamber includes a chamber body defining a process volume, a door coupled to the chamber body, a first electrode coupled to the door, and a power source communicatively coupled to the first electrode.

公开(公告)号：US11237485B2

公开(公告)日：2022-02-01

申请号：US16748202

申请日：2020-01-21

Applicant: Applied Materials, Inc.

Inventor： Yongan Xu ,  Christopher Dennis Bencher ,  Robert Jan Visser ,  Ludovic Godet

IPC: G03F7/20 ,  G03F7/00

Abstract: Embodiments of the present disclosure relate to methods for positioning masks in a propagation direction of a light source. The masks correspond to a pattern to be written into a photoresist layer of a substrate. The masks are positioned by stitching a first mask and a second mask. The first mask includes a set of first features having first feature extensions extending therefrom at first feature interfaces. The second mask includes a set of second features having second feature extensions extending therefrom at second feature interfaces. Each first feature extension stitches with each corresponding second feature extension to form each stitched portion of a first stitched portion of the first pair of masks. The stitched portion of the first pair of masks defines a portion of the pattern to be written into the photoresist layer.

公开(公告)号：US11193198B2

公开(公告)日：2021-12-07

申请号：US16706113

申请日：2019-12-06

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Morgan Evans ,  Jinxin Fu

IPC: G03F7/20 ,  C23C14/22 ,  G02B5/18 ,  G03F7/00 ,  G03F7/16 ,  F21V8/00

Abstract: Embodiments of the disclosure relate to systems and methods for forming devices on a substrate. For example, a method for forming devices on a substrate can include projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate and projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate. In these embodiments, the first surface and the second surface are on opposite sides of the substrate. Therefore, the ion beams can form the devices on both sides of the substrate.

公开(公告)号：US11187836B2

公开(公告)日：2021-11-30

申请号：US16293354

申请日：2019-03-05

Applicant: Applied Materials, Inc.

Inventor： Michael Yu-tak Young ,  Ludovic Godet ,  Robert Jan Visser ,  Naamah Argaman ,  Christopher Dennis Bencher ,  Wayne McMillan

IPC: G02B26/08 ,  G02B5/18 ,  G02B30/26 ,  G03F7/00

Abstract: Embodiments herein describe a sub-micron 3D diffractive optics element and a method for forming the sub-micron 3D diffractive optics element. In a first embodiment, a method is provided for forming a sub-micron 3D diffractive optics element on a substrate without planarization. The method includes depositing a material stack to be patterned on a substrate, depositing and patterning a thick mask material on a portion of the material stack, etching the material stack down one level, trimming a side portion of the thick mask material, etching the material stack down one more level, repeating trim and etch steps above ‘n’ times, and stripping the thick mask material from the material stack.

公开(公告)号：US11112697B2

公开(公告)日：2021-09-07

申请号：US16272962

申请日：2019-02-11

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: H01L21/67 ,  H01L21/687 ,  G03F7/20 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US11066747B2

公开(公告)日：2021-07-20

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Adib Khan ,  Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  B05D1/00 ,  B05D1/18

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

公开(公告)号：US10943779B2

公开(公告)日：2021-03-09

申请号：US15356475

申请日：2016-11-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ellie Yieh ,  Ludovic Godet ,  Srinivas Nemani ,  Er-Xuan Ping ,  Gary Dickerson

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/67 ,  C23C14/02 ,  C23C14/04 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213

Abstract: Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.