公开(公告)号：US4956816A

公开(公告)日：1990-09-11

申请号：US358482

申请日：1989-05-30

申请人： Shigeru Atsumi ,  Sumio Tanaka ,  Shinji Saito ,  Nobuaki Otsuka

发明人： Shigeru Atsumi ,  Sumio Tanaka ,  Shinji Saito ,  Nobuaki Otsuka

IPC分类号： G11C17/00 ,  G11C16/34 ,  G11C29/00 ,  G11C29/06 ,  G11C29/50

CPC分类号： G11C29/50004 ,  G11C16/34 ,  G11C29/50 ,  G11C29/50016 ,  G06F2201/81 ,  G11C16/04

摘要： This invention provides a non-volatile semiconductor memory having a first node and a second node, the second node having a ground potential. The invention includes a plurality of non-volatile memory cells each having a drain and a threshold potential, the cells, for storing data written into the cells at a predetermined normal writing voltage. A plurality of bit lines, each memory cell being connected to one of the bit lines, transfer data to and from the memory cells. A circuit connected to the bit lines simultaneously tests the memory cells of all the bit lines at the normal writing voltage to detect changes in the threshold potential.

摘要翻译： 本发明提供一种具有第一节点和第二节点的非易失性半导体存储器，第二节点具有接地电位。 本发明包括多个具有漏极和阈值电位的非易失性存储单元，用于存储以预定的正常写入电压写入单元的数据。 多个位线，每个存储单元连接到一个位线，将数据传送到存储单元和从存储单元传送数据。 连接到位线的电路同时以正常写入电压测试所有位线的存储单元，以检测阈值电位的变化。

公开(公告)号：US4810908A

公开(公告)日：1989-03-07

申请号：US125648

申请日：1987-11-25

申请人： Hirokazu Suzuki ,  Akinori Tahara ,  Shinji Saito

发明人： Hirokazu Suzuki ,  Akinori Tahara ,  Shinji Saito

IPC分类号： H03K19/086 ,  H03K5/02 ,  H03K19/00 ,  H03K19/018 ,  H03K19/21

CPC分类号： H03K5/02 ,  H03K19/212

摘要： A semiconductor logic circuit comprises a clock driver circuit and a clocked circuit which carries out a clocked operation responsive to an output of the clock driver circuit, where an output logic amplitude of the clock driver circuit is set to a value which is greater than an internal logic amplitude of the clocked circuit and is less than or equal to four times the internal logic amplitude of the clocked circuit.

摘要翻译： 半导体逻辑电路包括时钟驱动器电路和时钟电路，其根据时钟驱动器电路的输出执行时钟操作，其中时钟驱动器电路的输出逻辑幅度被设置为大于内部 时钟电路的逻辑幅度小于或等于时钟电路的内部逻辑幅度的四倍。

公开(公告)号：US4806417A

公开(公告)日：1989-02-21

申请号：US110291

申请日：1987-10-20

申请人： Shinji Saito ,  Hiroaki Araki ,  Kiyomi Ejiri ,  Hiroshi Ogawa ,  Chiaki Mizuno

发明人： Shinji Saito ,  Hiroaki Araki ,  Kiyomi Ejiri ,  Hiroshi Ogawa ,  Chiaki Mizuno

IPC分类号： C09D5/23 ,  C09D127/04 ,  C09D127/06 ,  C09D175/06 ,  G11B5/702 ,  G11B5/708 ,  G11B5/70

CPC分类号： G11B5/7023 ,  G11B5/7021 ,  Y10S428/90 ,  Y10T428/25

摘要： An improvement of a magnetic recording medium comprising a nonmagnetic support and a magnetic recording layer provided on the support which comprises a binder and a ferromagnetic powder dispersed therein is disclosed. The binder contains a resin component having a metal sulfonate group and the ferromagnetic powder contains water in an amount corresponding to moles of 20-80 times as much as the number of moles of the metal sulfonate group contained in the binder.

摘要翻译： 公开了一种磁性记录介质的改进，其包括设置在载体上的非磁性载体和磁记录层，该载体包含粘合剂和分散在其中的铁磁性粉末。 粘合剂含有具有金属磺酸盐基团的树脂组分，并且铁磁粉末含有相当于粘合剂中所含的金属磺酸盐基团摩尔数的20-80倍摩尔量的水。

公开(公告)号：US4802137A

公开(公告)日：1989-01-31

申请号：US7582

申请日：1987-01-28

申请人： Taizo Okuda ,  Shinji Saito ,  Nobuo Shishikura

发明人： Taizo Okuda ,  Shinji Saito ,  Nobuo Shishikura

IPC分类号： G11C29/00 ,  G11C16/04 ,  G11C17/00 ,  G11C29/06 ,  G11C29/24 ,  G11C29/50 ,  G11C7/00

CPC分类号： G11C29/24 ,  G11C29/50 ,  G11C16/04

摘要： A semiconductor memory device includes a plurality of memory cells arranged in rows and columns, a plurality of bit lines, each coupled to the memory cells forming one column, and a MOS transistor connected between a power supply terminal and one end of every bit line. The device further includes at least one test memory cell coupled in series with the MOS transistor, thus forming a series circuit connected between the power supply terminal and the ground.

摘要翻译： 半导体存储器件包括排列成行和列的多个存储器单元，多个位线，每个位线连接到形成一列的存储器单元，以及连接在电源端子和每个位线的一端之间的MOS晶体管。 该装置还包括与MOS晶体管串联耦合的至少一个测试存储单元，从而形成连接在电源端子和地之间的串联电路。

公开(公告)号：US4788663A

公开(公告)日：1988-11-29

申请号：US42877

申请日：1987-04-24

申请人： Sumio Tanaka ,  Shinji Saito ,  Shigeru Atsumi ,  Nobuaki Ohtsuka

发明人： Sumio Tanaka ,  Shinji Saito ,  Shigeru Atsumi ,  Nobuaki Ohtsuka

IPC分类号： G11C16/04 ,  G11C11/34 ,  G11C7/00 ,  H01L29/78

CPC分类号： G11C16/0441

摘要： Each memory cell in an EPROM includes two memory cell transistors which share a common floating gate and have two separated drains, one of which is connected to a read bit line and the other of which is connected to write bit line. In this EPROM, the read memory cell transistor of the read bit line has a lower hot electron injection rate than the hot electron injection rate of the write memory cell transistor of the write bit line. A bit line voltage booster is connected to the read bit line.

摘要翻译： EPROM中的每个存储单元包括两个存储单元晶体管，共享一个公共浮动栅极并具有两个分离的漏极，其中一个连接到读取位线，另一个连接到写入位线。 在该EPROM中，读取位线的读取存储单元晶体管的热电子注入速率低于写入位线的写入存储单元晶体管的热电子注入速率。 位线电压升压器连接到读位线。

公开(公告)号：US4743487A

公开(公告)日：1988-05-10

申请号：US816872

申请日：1986-01-07

申请人： Shinji Saito ,  Chiaki Mizuno ,  Hiroshi Ogawa ,  Noburo Hibino ,  Yasuo Tamai

发明人： Shinji Saito ,  Chiaki Mizuno ,  Hiroshi Ogawa ,  Noburo Hibino ,  Yasuo Tamai

IPC分类号： G11B5/708 ,  C09D5/23 ,  C09D7/12 ,  C09D167/00 ,  C09D169/00 ,  C09D177/00 ,  G11B5/70 ,  G11B5/73 ,  G11B5/704

CPC分类号： G11B5/7305 ,  Y10S428/90 ,  Y10T428/24355

摘要： A magnetic recording medium such as an audio cassette tape or a video cassette tape comprising a flexible nonmagnetic support and a magnetic recording layer which contains a ferromagnetic cobalt-containing iron oxide, in which the nonmagnetic support has a surface of a center line average height in the range of 0.01 to 0.1 .mu.m on both sides and the magnetic recording medium has a heat shrinkage ratio of not higher than 1%, the heat shrinkage ratio being determined after allowing to stand at 110.degree. C. for 4 hours.

摘要翻译： 一种诸如音频盒式磁带或盒式磁带的磁记录介质，包括柔性非磁性载体和含有铁磁性钴的氧化铁的磁记录层，其中非磁性载体具有中心线平均高度的表面 两侧的0.01〜0.1μm的范围和磁记录介质的热收缩率不高于1％，热收缩率是在110℃下放置4小时后测定的。

公开(公告)号：US4710421A

公开(公告)日：1987-12-01

申请号：US29557

申请日：1987-03-24

申请人： Toshio Ono ,  Yasuo Tamai ,  Chiaki Mizuno ,  Hiroshi Ogawa ,  Shinji Saito

发明人： Toshio Ono ,  Yasuo Tamai ,  Chiaki Mizuno ,  Hiroshi Ogawa ,  Shinji Saito

IPC分类号： G11B5/70 ,  C09D5/23 ,  C09D7/12 ,  G11B5/73

CPC分类号： G11B5/7305 ,  Y10S428/90 ,  Y10T428/2495 ,  Y10T428/24975 ,  Y10T428/31786

摘要： A magnetic recording medium having a heat shrinkage ratio of not higher than 1% and comprising a nonmagnetic support in the form of a tape which has a heat shrinkage ratio of not higher than 1.8%, a Young's modulus of 450 to 650 kg/mm.sup.2 in the longitudinal direction and a Young's modulus of 450 to 550 kg/mm.sup.2 in the width direction, and a magnetic recording layer provided on the support which comprises a binder and a ferromagnetic powder dispersed therein and has a squareness ratio of not less than 0.89. All the heat shrinkage ratios are values determined after being allowed to stand at 110.degree. C. for 4 hours.

摘要翻译： 具有不高于1％的热收缩率的磁记录介质，其包含热收缩率不高于1.8％的带状非磁性载体，杨氏模量为450至650kg / mm2， 长度方向和宽度方向的杨氏模量为450〜550kg / mm2，以及设置在载体上的磁记录层，其包含粘合剂和分散在其中的铁磁性粉末，并且具有不小于0.89的矩形比。 所有的热收缩率都是在110℃下放置4小时后确定的值。

公开(公告)号：US09413003B2

公开(公告)日：2016-08-09

申请号：US13574996

申请日：2011-07-07

申请人： Takehiko Sawai ,  Shinji Saito ,  Kazunori Urao ,  Takashi Kawasaki

发明人： Takehiko Sawai ,  Shinji Saito ,  Kazunori Urao ,  Takashi Kawasaki

IPC分类号： H01M4/583 ,  H01M4/00 ,  H01M4/48 ,  H01M4/13 ,  H01M4/58 ,  H01M4/62 ,  H01M4/587 ,  H01M4/36 ,  H01M4/38 ,  H01M4/1393 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/139 ,  H01M4/1395 ,  H01M4/133 ,  H01M4/134 ,  H01M10/052

CPC分类号： H01M4/483 ,  H01M4/13 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/1391 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/366 ,  H01M4/38 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/5825 ,  H01M4/583 ,  H01M4/587 ,  H01M4/625 ,  H01M10/052 ,  Y02E60/122

摘要： The present invention provides a negative-electrode material for a lithium secondary battery which has a very low resistance, allows the lithium secondary battery to be charged and discharged (high output) at a high current and have a high capacity, and achieve a cycle life to such an extent that the lithium secondary battery can be mounted on a vehicle. The electrode material is composed of (a) at least one active substance (4) selected from among a metal oxide containing metal therein and an alloy material each of which is coated with a carbon material and has a graphene phase or an amorphous phase (8) on at least a surface thereof, (b) a graphite-based carbon material (5) having the graphene phase or the amorphous phase on at least a surface thereof; and (c) carbon material (6) other than the graphite-based carbon material and having the graphene phase or the amorphous phase on at least a surface thereof. The active substance (4), the graphite-based carbon material (5), and the carbon material (6) other than the graphite-based carbon material fuse the graphene phase or the amorphous phase (8a, 8b) thereof together and bond them to each other to form a composite active substance (7) including composed of the active substance including one active substance selected from among the metal oxide containing the metal and the alloy material.

摘要翻译： 本发明提供了一种具有非常低电阻的锂二次电池用负极材料，使锂二次电池以高电流充放电（高输出）并具有高容量，并实现循环寿命 达到能够将锂二次电池安装在车辆上的程度。 电极材料由（a）至少一种选自含金属氧化物的活性物质（4）和各自涂覆有碳材料并具有石墨烯相或非晶相的合金材料（8 ），（b）至少在其表面上具有石墨烯相或非晶相的石墨基碳材料（5）; 和（c）除了石墨基碳材料之外的碳材料（6），并且在至少其表面上具有石墨烯相或非晶相。 活性物质（4），石墨基碳材料（5）和除了石墨基碳材料之外的碳材料（6）将石墨烯相或非晶相（8a，8b）熔合在一起并将它们结合 彼此形成复合活性物质（7），该复合活性物质（7）由包含选自含有金属的金属氧化物和合金材料的一种活性物质的活性物质构成。

公开(公告)号：US09093588B2

公开(公告)日：2015-07-28

申请号：US13032907

申请日：2011-02-23

申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/26 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

公开(公告)号：US08729575B2

公开(公告)日：2014-05-20

申请号：US13215628

申请日：2011-08-23

申请人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L31/072

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/3063 ,  H01S2304/04

摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.

摘要翻译： 根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。 氮化镓铝层中的铟浓度在​​1E18原子/ cm3至1E20原子/ cm3之间。 碳浓度等于或小于6E17原子/ cm3。 当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。