公开(公告)号：US20050000410A1

公开(公告)日：2005-01-06

申请号：US10828555

申请日：2004-04-21

申请人： Nobumitsu Takase ,  Hideshi Nishikawa ,  Makoto Ito ,  Kouji Sueoka ,  Shinsuke Sadamitsu

发明人： Nobumitsu Takase ,  Hideshi Nishikawa ,  Makoto Ito ,  Kouji Sueoka ,  Shinsuke Sadamitsu

IPC分类号： C30B15/00 ,  C30B29/06 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B15/00

摘要： To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon single crystal in the range of from 100 to 2000 Ω cm with a CZ method. In a case where poly-silicon produced with a Siemens method using trichlorosilane as raw material is used as the silicon raw material, an impurity concentration in the silicon raw material is selected so as to be controlled in the range of from −5 to 50 ppta method in terms of (a donor concentration—an acceptor concentration) and the selected poly-silicon is used. In a case of a MCZ method, the poly-silicon is selected in the range of from −25 to 20 ppta and the selected poly-silicon is used. Instead of the raw material, poly-silicon produced with a Siemens method using monosilane as raw material is used. Alternatively, a silicon crystal manufactured with a CZ method or a MCZ method using poly-silicon raw material is used.

摘要翻译： 为了抑制围绕目标值的电阻率的波动，从而在将硅原料熔融以制造范围为100的高电阻率硅单晶的制造方法中稳定地制造具有几乎相同的电阻率值的高电阻率硅单晶 到2000欧米加厘米与CZ方法。 在使用以三氯硅烷为原料的西门子方法制造的多晶硅作为硅原料的情况下，选择硅原料中的杂质浓度以控制在-5〜50ppta的范围内 使用（供体浓度 - 受体浓度）和选择的多晶硅的方法。 在MCZ方法的情况下，多晶硅的选择范围为-25〜20ppta，使用所选择的多晶硅。 使用以硅烷为原料的西门子法生产的多晶硅代替原料。 或者，使用以CZ法制造的硅晶体或使用多晶硅原料的MCZ法。

公开(公告)号：US06458204B1

公开(公告)日：2002-10-01

申请号：US09717135

申请日：2000-11-22

申请人： Masahiko Okui ,  Hiroki Murakami ,  Kazuyuki Egashira ,  Makoto Ito ,  Hiroshi Hayakawa ,  Kelly Garret ,  Yoshinori Shirakawa

发明人： Masahiko Okui ,  Hiroki Murakami ,  Kazuyuki Egashira ,  Makoto Ito ,  Hiroshi Hayakawa ,  Kelly Garret ,  Yoshinori Shirakawa

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/305

摘要： A method of producing high-quality and large-diameter single crystals by the Czochralski method is disclosed which can provide wafers with a minimized number of such grown-in defects as dislocation clusters and laser scattering tomography defects. Specifically, it is a method of producing silicon single crystals which comprises carrying out the crystal pulling while maintaining the solid-melt interface during pulling in the shape of an upward convex with the central portion of the interface being higher by at least 5 mm than the peripheral region thereof and while applying a magnetic field, and optionally in addition to the above, while maintaining the temperature gradient in the direction of axis of pulling in the peripheral region at a level lower than that in the central portion in the range of from the melting point to 1,200° C. In this case, it is desirable that the portion of the single crystal surface lying at least 50 mm above the melt surface be shielded from direct radiant heat from the heater and/or crucible wall, that a horizontal magnetic field of 0.08 to 0.3 T be applied in parallel with the melt surface or a cusped magnetic field showing an intensity of 0.02 to 0.07 T at a crucible wall site on the melt surface be applied and that the crucible be rotated at a speed of not more than 5 min−1 and the single crystal at a speed of not less than 13 min−1.

摘要翻译： 公开了通过Czochralski方法生产高质量和大直径单晶的方法，其可以为晶片提供最少数量的诸如位错簇和激光散射层析成像缺陷的这种生长缺陷。 具体地说，它是一种生产硅单晶的方法，其中包括在拉伸成呈向上凸起的形状的同时保持固溶体界面的同时进行晶体拉伸，其中界面的中心部分高​​于 并且在施加磁场的同时，并且可选地除了上述之外，同时保持在周边区域中的拉动轴线方向上的温度梯度比在中心部分的温度梯度低 熔点为1200℃。在这种情况下，希望在熔体表面上方至少50毫米的单晶表面的部分被屏蔽不受来自加热器和/或坩埚壁的直接辐射热，即水平磁 在熔融表面上的坩埚壁部位处，与熔体表面平行施加0.08〜0.3T的场，或者表示强度为0.02〜0.07T的尖细磁场b 并且坩埚以不超过5分钟-1的速度旋转，并且单晶以不小于13分钟-1的速度旋转。

公开(公告)号：US06419580B1

公开(公告)日：2002-07-16

申请号：US09434940

申请日：1999-11-05

申请人： Makoto Ito

发明人： Makoto Ito

IPC分类号： A63F1300

CPC分类号： A63F13/219 ,  A63F2300/303 ,  A63F2300/305 ,  A63F2300/308 ,  A63F2300/6054 ,  A63F2300/8029

摘要： An image processing device and game apparatus is provided. The image processing device displays movement of a display object based on the control of an operator to realize natural movement, and impart variation to a movement. The image processing device may add predetermined change factors to a display object movement in a prescribed situation or cause a prescribed special movement. The game apparatus allows an operator to control a display object. The game apparatus determined when the display object is within a prescribed area and may display the display object in a particular display configuration.

摘要翻译： 提供了图像处理装置和游戏装置。 图像处理装置基于操作者的控制显示显示对象的移动，以实现自然移动，并赋予运动变化。 图像处理装置可以在规定的情况下对显示对象移动添加规定的变更因子，或者进行规定的特殊动作。 游戏装置允许操作者控制显示对象。 游戏装置确定显示对象何时在规定区域内并且可以以特定显示配置显示该显示对象。

公开(公告)号：US06302957B1

公开(公告)日：2001-10-16

申请号：US09670715

申请日：2000-09-28

申请人： Makoto Ito ,  Hiroki Murakami

发明人： Makoto Ito ,  Hiroki Murakami

IPC分类号： C30B1500

CPC分类号： C30B15/10 ,  C03B32/00 ,  C03C15/00 ,  C03C23/007 ,  C30B35/002 ,  Y10S65/08 ,  Y10S117/90 ,  Y10T117/10

摘要： An inner surface of a quartz crucible after being used is cleaned by an acid liquid, and an extraneous material adhered to its inner surface is removed. The inner surface after the extraneous material has been removed is heat treated at 1600° C. or more, and the inner surface where cristobalite formation occurs is recovered into an amorphous state. In this manner, the quartz crucible after being used for growing single crystal silicon is reproduced to a level equal to a new crucible.

摘要翻译： 使用后的石英坩埚的内表面通过酸液清洗，除去附着在其内表面的外来材料。 将外来材料除去后的内表面在1600℃以上进行热处理，发生方石方的内表面回收成非晶状态。 以这种方式，将用于生长单晶硅的石英坩埚再现到等于新的坩埚的水平。

公开(公告)号：US06260993B1

公开(公告)日：2001-07-17

申请号：US09174597

申请日：1998-10-19

申请人： Makoto Ito

发明人： Makoto Ito

IPC分类号： F21V700

CPC分类号： B60Q1/0683

摘要： A vehicle lamp includes: a reflector having a rear surface and an aiming screw coupling portion; a lamp body having an inner surface, for containing the reflector tiltably; an aiming screw extending in a substantially longitudinal direction coupled to the aiming screw coupling portion of the reflector and the lamp body; a first projected portion formed near the aiming screw coupling portion on the rear surface of the reflector; and a second projected portion formed on the inner surface of the lamp body in a place behind the first projected portion. When the reflector is tilted up to a predetermined angle position, the first and second projected portions are brought into contact with each other within a plane substantially perpendicular to the axial direction of the aiming screw.

摘要翻译： 车灯包括：具有后表面的反射器和瞄准螺钉联接部分; 具有内表面的灯体，用于可倾斜地容纳反射器; 沿着与所述反射器的所述瞄准螺纹联接部分和所述灯体相连的基本上纵向方向延伸的瞄准螺钉; 在所述反射器的后表面上的所述瞄准螺钉联接部分附近形成的第一突出部分; 以及形成在灯体的内表面上的第一突起部分后面的第二突出部分。 当反射器倾斜到预定角度位置时，第一和第二突出部分在基本上垂直于瞄准螺钉的轴向方向的平面内彼此接触。

公开(公告)号：US06150808A

公开(公告)日：2000-11-21

申请号：US822925

申请日：1997-03-21

申请人： Hiroshi Yagyu ,  Koichi Sato ,  Makoto Ito ,  Kenichi Ao

发明人： Hiroshi Yagyu ,  Koichi Sato ,  Makoto Ito ,  Kenichi Ao

IPC分类号： H01H13/00 ,  H01H9/54 ,  H01H11/00 ,  H01H23/00 ,  H01H36/00 ,  H03K17/97 ,  G01B7/14 ,  G01B7/30 ,  H01H13/64 ,  H01L43/08

CPC分类号： H03K17/97 ,  E05F15/00 ,  E05Y2400/854 ,  E05Y2400/86 ,  E05Y2900/55 ,  H01H11/0056 ,  H01H2021/225 ,  H01H23/003 ,  H01H2300/01 ,  H03K2017/9713

摘要： A switching apparatus is provided which may be used for power window control systems of automotive vehicles. The switching apparatus includes an operating knob, a magnet, a magnetoresistive element, and a position determining circuit. The operating knob is manually shifted between a plurality of switching positions. The magnet moves according to the movement of the operating knob. The magnetoresistive element is placed in a magnetic field applied from the magnet and changes an electrical resistance thereof according to a variation in orientation of a magnetic flux applied to the magnetoresistive element resulting from the movement of the magnet. The position determining circuit monitors a change in electric resistance of the magnetoresistive element to determine the switching position of the operating member.

摘要翻译： 提供了可用于机动车辆的电动车窗控制系统的开关装置。 开关装置包括操作旋钮，磁体，磁阻元件和位置确定电路。 操作旋钮在多个切换位置之间手动移动。 磁铁根据操作旋钮的移动而移动。 磁阻元件被放置在从磁体施加的磁场中，并且根据由磁体的运动引起的施加到磁阻元件的磁通的取向的变化而改变其电阻。 位置确定电路监视磁阻元件的电阻变化，以确定操作构件的切换位置。

公开(公告)号：US5925147A

公开(公告)日：1999-07-20

申请号：US769528

申请日：1996-12-19

申请人： Makoto Ito

发明人： Makoto Ito

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B27/02 ,  C30B29/06 ,  H01L21/208 ,  C30B15/10

CPC分类号： C30B15/14 ,  C30B15/00 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A process for producing single crystals has been presented which enables the pulling up and growing of single crystals, without loss of accurate control of the oxygen concentration in the crystal, and with excellent dielectric strength of subsequently produced gate oxide films. The process of producing single crystals in accordance with this invention is characterized by confluence of the inert gas flows (33 and 32) once divided into outside and inside a heat resistant and heat insulative component (7).

摘要翻译： 已经提出了生产单晶的方法，其能够提取和生长单晶，而不会精确控制晶体中的氧浓度，并且具有优异的后续制备的栅极氧化物膜的介电强度。 根据本发明的单晶的制造方法的特征在于，一旦分成外部和内部的耐热和隔热部件（7）的惰性气体流（33和32）的汇合。

公开(公告)号：US5661391A

公开(公告)日：1997-08-26

申请号：US493360

申请日：1995-06-21

申请人： Makoto Ito ,  Takashi Hyogo ,  Yasuharu Odachi ,  Norimoto Minoshima

发明人： Makoto Ito ,  Takashi Hyogo ,  Yasuharu Odachi ,  Norimoto Minoshima

IPC分类号： H01F38/14 ,  B60L5/00 ,  B60L11/18 ,  B60R16/02 ,  B60R16/03 ,  H02J7/00 ,  H02J7/02 ,  H02J17/00

CPC分类号： B60L11/1838 ,  B60L11/182 ,  H02J7/025 ,  B60R16/03 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T90/121 ,  Y02T90/122 ,  Y02T90/128 ,  Y02T90/14 ,  Y02T90/163 ,  Y10S336/02

摘要： An apparatus for charging a battery of an electrically powered vehicle located at a charging station is provided. The apparatus comprises a pair of separate primary cores each of which has a primary coil and is disposed in a wheel stop block secured at the battery charging station, and a secondary coil which is carried by the vehicle. The apparatus further includes a first drive mechanism for retractably lowering the secondary coil linearly to its operative positions, and a second drive mechanism for retractably moving the primary cores inwardly toward each other linearly to their operative position where a closed magnetic circuit is formed thereby and the primary coil is inductively coupled with the secondary coil which is then placed in its operative position. Each primary core has a projection which is engageable with a counterpart of the other core, and the engaged projections of the cores are arranged to pass through an opening of a secondary coil case round which opening the secondary coil is wound.

摘要翻译： 提供一种用于为位于充电站的电动车辆的电池充电的装置。 该装置包括一对单独的主芯，每个主芯具有初级线圈，并且设置在固定在电池充电站的车轮挡块中，以及由车辆承载的次级线圈。 该装置还包括用于将次级线圈线性地可缩回地降低到其工作位置的第一驱动机构，以及第二驱动机构，用于将主芯线向内彼此向内可往另一个地向彼此线性移动到其形成闭合磁路的操作位置， 初级线圈与次级线圈电感耦合，然后将其放置在其工作位置。 每个初级芯具有能够与另一个芯的对应物接合的突起，并且芯的接合突起被布置成穿过卷绕次级线圈的次级线圈壳的圆周的开口。

公开(公告)号：US5625948A

公开(公告)日：1997-05-06

申请号：US631211

申请日：1996-04-12

申请人： Yoshitaka Kuroda ,  Makoto Ito ,  Nobuyuki Morikawa ,  Ryoiti Izumi ,  Kenji Ogura

发明人： Yoshitaka Kuroda ,  Makoto Ito ,  Nobuyuki Morikawa ,  Ryoiti Izumi ,  Kenji Ogura

IPC分类号： B21C37/28 ,  B21D7/00 ,  B21D17/02 ,  B21D7/06

CPC分类号： B21D17/025 ,  B21C37/28 ,  B21D7/00 ,  Y10T29/49444

摘要： According to the present invention, in the first process, a pipe end of a long pipe is bent with a radius of curvature which is larger than a minimum radius of curvature to form a large R portion. That is to say, bending with a large radius of curvature (R) is performed to form a large R portion in a region in which cracking or excessive reduction of plate thickness of the bend outer-side portion, or buckling of the bend inner-side portion does not occur. Subsequently, in the second process, the pipe is bent with a small radius of curvature form a small R portion by pressing a pipe-end portion of the pipe from a pipe-end direction while fixedly holding the bend side wall of the pipe. In this way, it is possible to obtain an R-minimum elbow configuration irrespective of magnitude of an amount of elongation of material and further without special equipment or mechanisms, by minor modification of present equipment.

摘要翻译： 根据本发明，在第一种方法中，长管的管端弯曲曲率半径大于最小曲率半径以形成较大的R部分。 也就是说，在弯曲外侧部分的板厚度的破裂或过度减小或弯曲内侧部分的弯曲的区域中，执行具有大的曲率半径（R）的弯曲以形成大的R部分， 侧面部分不发生。 随后，在第二工序中，通过在固定保持管的弯曲侧壁的同时从管端方向挤压管的管端部，将管弯曲成小曲率半形状，形成小的R部。 以这种方式，通过对本设备的微小修改，可以获得R最小弯头构造，而不考虑材料的伸长量的大小，并且没有特殊设备或机构。

公开(公告)号：US5611857A

公开(公告)日：1997-03-18

申请号：US474662

申请日：1995-06-07

申请人： Yoshihiro Akashi ,  Kaoru Kuramochi ,  Setsuo Okamoto ,  Yasuji Tsujimoto ,  Makoto Ito

发明人： Yoshihiro Akashi ,  Kaoru Kuramochi ,  Setsuo Okamoto ,  Yasuji Tsujimoto ,  Makoto Ito

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1088

摘要： A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.

摘要翻译： 通过调节上拉硅单晶的温度梯度而不损失其拉伸速率，制造具有优异的栅极氧化膜介电强度的硅单晶的方法和装置。 通过从单晶的熔体中提取单晶来生产硅单晶的过程在生长的单晶仍处于高温时施加一定的平均温度梯度。 该设备在坩埚外部设置有加热元件和拉动轴，单晶从坩埚中的材料的熔体被拉出。 将加热元件的长度h与坩埚的内径phi的比率调整为0.2〜0.8，由此将温度梯度保持在2.5℃/ mm以下。