公开(公告)号：US09029257B2

公开(公告)日：2015-05-12

申请号：US13952481

申请日：2013-07-26

Applicant: Micron Technology, Inc.

Inventor： Jaspreet S. Gandhi

IPC: H01L21/768 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L24/14 ,  H01L21/6835 ,  H01L21/7684 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03825 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05016 ,  H01L2224/05018 ,  H01L2224/05019 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05555 ,  H01L2224/05556 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/11622 ,  H01L2224/1182 ,  H01L2224/1184 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/05042 ,  H01L2924/0538 ,  H01L2924/05442 ,  H01L2924/07025 ,  H01L2924/10253 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: Some embodiments include a planarization method. A liner is formed across a semiconductor substrate and along posts that extending upwardly from the substrate. Organic fill material is formed over the liner and between the posts. A planarized surface is formed which extends across the posts and across one or both of the liner and the fill material. Some embodiments include a semiconductor construction containing a semiconductor die. Electrically conductive posts extend through the die. The posts have upper surfaces above a backside surface of the die, and have sidewall surfaces extending between the backside surface and the upper surfaces. A liner is across the backside surface of the die and along the sidewall surfaces of the posts. Electrically conductive caps are over the upper surfaces of the posts, and have rims along the liner adjacent the sidewall surfaces of the posts.

Abstract translation: 一些实施例包括平面化方法。 衬套跨越半导体衬底并沿着从衬底向上延伸的柱形成。 有机填充材料形成在衬里上和柱之间。 形成平面化的表面，该平面化表面延伸穿过柱并穿过衬套和填充材料中的一个或两个。 一些实施例包括包含半导体管芯的半导体结构。 导电柱延伸穿过模具。 柱具有在模具的背面上方的上表面，并且具有在背面和上表面之间延伸的侧壁表面。 衬套穿过模具的后表面并且沿着柱的侧壁表面。 导电盖在柱的上表面之上，并且沿着邻近柱的侧壁表面的衬垫具有边缘。

公开(公告)号：US08872356B2

公开(公告)日：2014-10-28

申请号：US14055993

申请日：2013-10-17

Applicant: Micron Technology, Inc.

Inventor： Jaspreet S. Gandhi ,  Don L. Yates ,  Yangyang Sun

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L23/49811 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76828 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/03464 ,  H01L2224/03472 ,  H01L2224/0348 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/05552

Abstract: Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over an at least one bond pad, forming an opening within the dielectric material to expose the at least one bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 μm. Semiconductor structures formed by such methods are also disclosed.

Abstract translation: 公开了在接合焊盘上形成Ni材料的方法。 所述方法包括在至少一个接合焊盘上形成电介质材料，在电介质材料内形成开口以暴露至少一个接合焊盘，固化电介质材料以形成具有陡峭曲线轮廓的电介质材料的表面，以及 在所述至少一个接合垫上形成镍材料。 可以通过改变介电材料的固化过程和电介质材料的厚度中的至少一个来形成具有陡峭曲线轮廓的电介质材料。 电介质材料可以用于在小于约50μm的接合焊盘上形成相对较厚的Ni材料。 还公开了通过这些方法形成的半导体结构。