公开(公告)号：US20070155133A1

公开(公告)日：2007-07-05

申请号：US11531793

申请日：2006-09-14

申请人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

发明人： Ralf Richter ,  Tobias Letz ,  Holger Schuehrer

IPC分类号： H01L21/00

CPC分类号： H01L21/02087 ,  H01L21/6708 ,  H01L21/76801 ,  H01L21/76877

摘要： By providing an etch stop layer selectively at the bevel, at least one additional wet chemical bevel etch process may be performed prior to or during the formation of a metallization layer without affecting the substrate material. Hence, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. The etch stop layer may be formed at an early manufacturing stage so that a bevel etch process may be performed at any desired stage of the formation of circuit elements.

摘要翻译： 通过在斜面上选择性地设置蚀刻停止层，可以在形成金属化层之前或期间执行至少一个附加的湿化学斜面蚀刻工艺，而不影响衬底材料。 因此，在形成任何阻挡层和金属层之前，电介质材料，特别是低k电介质材料可以从斜面被可靠地移除。 蚀刻停止层可以在早期制造阶段形成，从而可以在形成电路元件的任何期望阶段执行斜面蚀刻工艺。

公开(公告)号：US20070152343A1

公开(公告)日：2007-07-05

申请号：US11534285

申请日：2006-09-22

申请人： Ralf Richter ,  Carsten Peters ,  Heike Salz ,  Matthias Schaller

发明人： Ralf Richter ,  Carsten Peters ,  Heike Salz ,  Matthias Schaller

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76832 ,  H01L21/76846 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： By providing additional etch stop layers and/or etch protection layers, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. Consequently, conductive line erosion and/or penetration into extension regions may be significantly reduced, thereby improving the reliability and performance of corresponding semiconductor devices.

摘要翻译： 通过提供附加的蚀刻停止层和/或蚀刻保护层，可以以高度可靠的方式控制用于形成用于直接连接多晶硅线路和有源区域的接触开口的相应蚀刻工艺。 因此，可以显着地减少导线侵蚀和/或穿透到延伸区域，从而提高对应的半导体器件的可靠性和性能。

公开(公告)号：US20070123009A1

公开(公告)日：2007-05-31

申请号：US11470024

申请日：2006-09-05

申请人： Ralf Richter ,  Matthias Schaller ,  Ellen Claus ,  Eckhard Langer

发明人： Ralf Richter ,  Matthias Schaller ,  Ellen Claus ,  Eckhard Langer

IPC分类号： H01L21/20

CPC分类号： H01L23/5226 ,  H01L21/76808 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： By providing dummy vias below electrically non-functional metal regions, the risk for metal delamination in subsequent processes may be significantly reduced. Moreover, in some embodiments, the mechanical strength of the resulting metallization layers may be even more enhanced by providing dummy metal regions, which may act as anchors for an overlying non-functional metal region. In addition, dummy vias may also be provided in combination with electrically functional metal lines and regions, thereby also enhancing the mechanical stability and the electrical performance thereof.

摘要翻译： 通过在电气非功能金属区域之下提供虚拟通孔，可以显着降低后续工艺中金属分层的风险。 而且，在一些实施例中，所得到的金属化层的机械强度甚至可以通过提供虚拟金属区域来进一步增强，虚拟金属区域可以用作覆盖的非功能性金属区域的锚点。 此外，还可以与电功能金属线和区域组合提供虚拟通孔，从而也增强机械稳定性及其电性能。

公开(公告)号：US06844692B1

公开(公告)日：2005-01-18

申请号：US10645515

申请日：2003-08-22

申请人： Richard Paul Jasinski ,  Ralf Richter

发明人： Richard Paul Jasinski ,  Ralf Richter

IPC分类号： B60H1/00 ,  B60L1/02 ,  G05B5/00 ,  H02K23/66 ,  H02P20060101 ,  H02P1/00

CPC分类号： B60H1/00835 ,  B60L1/02 ,  H02K23/66 ,  Y02T10/641

摘要： A motor actuator (52) of a climate control system (37) includes an specialized electric motor (62) with a motor housing enclosing an encoder ring (104) on a motor shaft (77) having a plurality of opposite encoder-segment sets with encoder brushes (96a-b) on the housing wiping the encoder ring and thereby forming an encoder circuit through opposite segments of the encoder-segment sets. The electric motor further includes power and encoder terminals (98a-b and 100a-b) positioned externally of the motor housing with at least one power terminal being electrically coupled to one of the power brushes and at least one encoder terminal being electrically coupled to one of the encoder brushes. A control head (58) of the system includes a continuity pulse counter (72) coupled to the at least one encoder terminal for creating pulses representative of impedance in the encoder circuit and, therefore, movement of the motor shaft and a damper (40) linked thereto.

摘要翻译： 气候控制系统（37）的电动机致动器（52）包括专用电动机（62），其具有电动机壳体，该电动机壳体包围电动机轴（77）上的编码器环（104），电动机轴具有多个相对的编码器段组， 编码器电刷（96a-b）在外壳上擦拭编码器环，从而通过编码器段组的相对部分形成编码器电路。 电动机还包括位于电动机壳体外部的动力和编码器端子（98a-b和100a-b），其中至少一个电力端子电耦合到电力电刷之一，并且至少一个编码器端子电耦合到一个 的编码器刷子​​。 系统的控制头（58）包括连接到至少一个编码器端的连续脉冲计数器（72），用于产生代表编码器电路中的阻抗的脉冲，因此电动机轴和阻尼器（40）的运动， 与之相关联。

公开(公告)号：US06538073B1

公开(公告)日：2003-03-25

申请号：US09604281

申请日：2000-06-26

申请人： Georg Oenbrink ,  Harald Haeger ,  Ralf Richter

发明人： Georg Oenbrink ,  Harald Haeger ,  Ralf Richter

IPC分类号： C08L7700

CPC分类号： C08G69/26 ,  C08G69/28 ,  C08G69/48 ,  C09J177/00 ,  C09J177/08

摘要： A graft copolymer suitable as a blend component or as a hot-melt adhesive, which contains the following monomer units: a) from 0.5 to 25% by weight, based on the graft copolymer, of a polyamine having at least 11 nitrogen atoms and a number-average molar mass Mn of at least 500 g/mol; and b) an equimolar combination of diamine and dicarboxylic acid as polyamide-forming monomers.

摘要翻译： 适合作为共混组分或热熔粘合剂的接枝共聚物，其包含以下单体单元：a）基于接枝共聚物，0.5至25重量％的具有至少11个氮原子的多胺和 数均摩尔质量Mn为至少500g / mol; 和b）作为形成聚酰胺的单体的二胺和二羧酸的等摩尔组合。

公开(公告)号：US06407182B1

公开(公告)日：2002-06-18

申请号：US09768286

申请日：2001-01-25

申请人： Juergen Maul ,  Georg Oenbrink ,  Harald Haeger ,  Hans-Peter Hauck ,  Ralf Richter

发明人： Juergen Maul ,  Georg Oenbrink ,  Harald Haeger ,  Hans-Peter Hauck ,  Ralf Richter

IPC分类号： C08L7700

CPC分类号： C08L77/00

摘要： Transparent molding compositions are prepared by blending from 50 to 99 parts by weight of a transparent polyamide, and from 1 to 50 parts by weight of a graft copolymer, such that the sum of the parts by weight of the transparent polyamide and the graft copolymer is 100. The graft copolymer is prepared by reacting from 0.5 to 25% by weight, based on the graft copolymer, of a branched polyamine having at least 4 nitrogen atoms and having a number average molecular weight Mn of at least 146 g/mol, with polyamide-forming monomers selected from the group consisting of lactams, &ohgr;-aminocarboxylic acids, equimolar combinations of diamine and dicarboxylic acid, and combinations thereof.

摘要翻译： 通过将50至99重量份的透明聚酰胺和1至50重量份的接枝共聚物共混来制备透明模塑组合物，使得透明聚酰胺和接枝共聚物的重量份之和为 接枝共聚物通过基于接枝共聚物使0.5至25重量％的具有至少4个氮原子并具有至少146g / mol数均分子量Mn的支链多胺与 选自内酰胺，ω-氨基羧酸，二胺和二羧酸的等摩尔组合的聚酰胺形成单体及其组合。

公开(公告)号：US5612451A

公开(公告)日：1997-03-18

申请号：US498971

申请日：1995-07-06

申请人： Thomas Heitz ,  Alexander Gl uck ,  Walter Heitz ,  Ralf Richter

发明人： Thomas Heitz ,  Alexander Gl uck ,  Walter Heitz ,  Ralf Richter

IPC分类号： C08G67/00 ,  C08G61/12 ,  C08G67/02 ,  C08G8/02

CPC分类号： C08G61/127

摘要： Polyaryl ether ketones are prepared by electrophilic polycondensation using acyl halides as monomer components in the presence of a Lewis acid, by a process in which from 0.001 to 60% by weight of an inert filler or of a component which can be converted into an inert filler during working up are added to the reaction mixture before or during the polycondensation.

摘要翻译： 聚芳醚酮通过在路易斯酸存在下使用酰基卤作为单体组分的亲电缩聚反应制备，其中将0.001至60重量％的惰性填料或可转化为惰性填料的组分 在加工之前或缩聚过程中加入反应混合物。

公开(公告)号：US08906801B2

公开(公告)日：2014-12-09

申请号：US13417491

申请日：2012-03-12

申请人： Ralf Richter ,  Hans-Jürgen Thees

发明人： Ralf Richter ,  Hans-Jürgen Thees

IPC分类号： H01L21/4763 ,  H01L23/12 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/31144 ,  H01L21/76816 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Processes for forming integrated circuits and integrated circuits formed thereby are provided in which a first dielectric layer including a first dielectric material is formed on an underlying substrate. A first etch mask having at least two patterned recesses is patterned over the first dielectric layer. At least one first-level via is etched in the first dielectric layer through one patterned recess in the first etch mask with a first etchant, and the first-level via is filled with electrically-conductive material. A second dielectric layer including a second dielectric material is formed over the first dielectric layer. A second etch mask having patterned recesses corresponding to the patterned recesses of the first etch mask is patterned over the second dielectric layer. Second-level vias are etched in the second dielectric layer through the patterned recesses in the second etch mask with a second etchant and exposed to the first etchant.

摘要翻译： 提供了用于形成由此形成的集成电路和集成电路的工艺，其中包括第一介电材料的第一介电层形成在下面的基板上。 具有至少两个图案化凹槽的第一蚀刻掩模在第一介电层上图案化。 在第一蚀刻掩模中通过第一蚀刻掩模中的一个图案化凹槽在第一介电层中蚀刻至少一个第一级通孔，并且第一级通孔用导电材料填充。 在第一电介质层上形成包括第二电介质材料的第二电介质层。 具有对应于第一蚀刻掩模的图案化凹部的图案化凹坑的第二蚀刻掩模在第二介电层上图案化。 第二电介质层通过具有第二蚀刻剂的第二蚀刻掩模中的图案化凹槽蚀刻在第二介电层中并暴露于第一蚀刻剂。

公开(公告)号：US08685807B2

公开(公告)日：2014-04-01

申请号：US13100798

申请日：2011-05-04

申请人： Ronny Pfuetzner ,  Ralf Richter ,  Jens Heinrich

发明人： Ronny Pfuetzner ,  Ralf Richter ,  Jens Heinrich

IPC分类号： H01L21/336

CPC分类号： H01L21/823871 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823828

摘要： The method described herein involves a method of forming metal gates and metal contacts in a common fill process. The method may involve forming a gate structure comprising a sacrificial gate electrode material, forming at least one conductive contact opening in a layer of insulating material positioned adjacent the gate structure, removing the sacrificial gate electrode material to thereby define a gate electrode opening, and performing a common deposition process to fill the conductive contact opening and the gate electrode opening with a conductive fill material.

摘要翻译： 本文描述的方法涉及在公共填充过程中形成金属栅极和金属触点的方法。 该方法可以包括形成包括牺牲栅电极材料的栅极结构，在邻近栅极结构定位的绝缘材料层中形成至少一个导电接触开口，去除牺牲栅电极材料，从而限定栅电极开口，并执行 用于用导电填充材料填充导电接触开口和栅电极开口的公共沉积工艺。

公开(公告)号：US08566774B2

公开(公告)日：2013-10-22

申请号：US13293351

申请日：2011-11-10

申请人： Lukas Daellenbach ,  Elmar Gaugler ,  Ralf Richter

发明人： Lukas Daellenbach ,  Elmar Gaugler ,  Ralf Richter

IPC分类号： G06F9/455 ,  G06F17/50

CPC分类号： G06F13/4027 ,  G06F17/505 ,  G06F17/5072 ,  G06F2217/84

摘要： A method is provided for optimized buffer placement based on timing and capacitance assertions in a functional chip unit including a single source and multiple macros, each having a sink. Placement of the source and macros with the sinks is pre-designed and buffers are placed in branches connecting the source with the multiple sinks. The method includes: calculating an estimated slack for each branch based on cycle reach, calculating a minimum slack for each branch, arranging branches according to the calculated slack to evaluate at least one most critical branch, inserting decoupling buffers in all branches except the most critical branch(es) and placing decoupling buffers close to the source, globally routing the most critical branch(es) and fixing slew conditions within this branch, globally routing at least one subsequent branch as arranged according to the calculated slack and fixing slew conditions within this branch(es), and routing all remaining branches.

摘要翻译： 提供了一种基于包括单个源和多个宏的功能芯片单元中的定时和电容断言来优化缓冲器放置的方法，每个宏具有接收器。 源和宏与接收器的放置是预先设计的，并且缓冲器被放置在连接源与多个接收器的分支中。 该方法包括：基于周期到达计算每个分支的估计松弛，计算每个分支的最小松弛，根据计算的松弛来布置分支以评估至少一个最关键分支，在除最大关键点之外的所有分支中插入去耦缓冲器 分支，并将去耦缓冲区放置在源附近，全局路由最重要的分支和固定此分支中的转换条件，全局路由至少一个后续分支，根据计算的松弛和固定转换条件排列 分支，并路由所有剩余的分支。