公开(公告)号：US6090527A

公开(公告)日：2000-07-18

申请号：US87869

申请日：1998-06-01

申请人： Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Takayuki Sakakibara ,  Satoru Sagoh

发明人： Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Takayuki Sakakibara ,  Satoru Sagoh

IPC分类号： G03F1/20 ,  G03F7/20 ,  H01J37/317 ,  G03F9/00 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F7/2047 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31794

摘要： In an exposure mask of the present invention, a plurality of opening regions are disposed via crossbeams, each having a size not to be resolved, along peripheral edges of island-like patterns and peninsula-like patterns for shielding transmission of charged particles.

摘要翻译： 在本发明的曝光掩模中，沿着岛状图案的周边边缘和半岛状图案，通过横梁布置多个开口区域，每个开口区域具有不被拆分的尺寸，用于屏蔽带电粒子的透射。

公开(公告)号：US6082761A

公开(公告)日：2000-07-04

申请号：US8503

申请日：1998-01-16

申请人： Hisaaki Kato ,  Toshinori Tanase ,  Yasuo Ochiai ,  Hiroshi Yasuda ,  Hiroki Nakajima

发明人： Hisaaki Kato ,  Toshinori Tanase ,  Yasuo Ochiai ,  Hiroshi Yasuda ,  Hiroki Nakajima

IPC分类号： B60R21/16 ,  B60R21/213 ,  B60R21/215 ,  B60R21/232 ,  B60R21/26 ,  B60R21/22

CPC分类号： B60R21/232 ,  B60R21/213 ,  B60R21/215 ,  B60R21/26

摘要： A side air bag device has an air bag and a substantially cylindrical inflator for supplying inflation gas to the air bag. The air bag includes a cloth bag and is installed in a vehicle interior in a folded state along the edge of a door opening. The air bag deploys so as to cover the door opening when it inflates. The air bag has a substantially cylindrical tubular gas inflow portion. This gas inflow portion is connected to the inflator so that it covers the inflator. The gas inflow portion is clamped to the outer circumferential surface of the inflator. With a side air bag device according to the invention it is not necessary to use a long pipe that from the inflator and it is possible to increase the freedom of installation of the device and also reduce its weight and cost.

摘要翻译： 侧气囊装置具有气囊和用于向气囊供给充气气体的大致圆筒形的充气机。 安全气囊包括布袋，并且沿着门开口的边缘以折叠状态安装在车辆内部。 气囊展开，以便在充气时遮盖门开口。 气囊具有大致圆筒状的管状气体流入部。 该气体流入部分连接到充气机，以便它覆盖充气机。 气体流入部被夹持在充气机的外周面。 利用根据本发明的侧气囊装置，不需要使用来自充气机的长管，并且可以增加装置的安装自由度并且还减少其重量和成本。

公开(公告)号：US5981960A

公开(公告)日：1999-11-09

申请号：US724954

申请日：1996-10-02

申请人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda ,  Hitoshi Tanaka

发明人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda ,  Hitoshi Tanaka

IPC分类号： H01J37/06 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70925 ,  H01J37/3002 ,  H01J37/3174 ,  H01J2237/022 ,  H01J2237/188 ,  H01J2237/31776

摘要： A charged particle beam exposure method and apparatus, in which a charged particle beam is shaped based on pattern data and the shaped charged particle beam is irradiated to a desired location on a sample. The method and apparatus includes introducing ozone gas into a chamber through which the charged particle beam is passed, shaped and deflected, to be irradiated to the desired location while the charged particle beam is irradiated through the chamber. The ozone gas concentration in the chamber is maintained so that the concentration downstream along the beam is higher than the concentration upstream along the beam. A charge-up drift due to a contamination material from a resist on a wafer can be avoided by the ozone self cleaning. The ozone oxidation does not occur at the upstream chamber where there is a lower ozone concentration and lower contamination.

摘要翻译： 带电粒子束曝光方法和装置，其中基于图案数据对带电粒子束进行成形，并将成形的带电粒子束照射到样品上的期望位置。 所述方法和装置包括将臭氧气体引入室中，带电粒子束通过该腔通过，成形和偏转，以照射到期望位置，同时通过室照射带电粒子束。 保持室中的臭氧气体浓度，使得沿着光束的下游的浓度高于沿着光束的上游的浓度。 通过臭氧自清洁可以避免由于晶片上的抗蚀剂引起的污染物质的充电漂移。 臭氧氧化不会发生在臭氧浓度较低和污染较低的上游室。

公开(公告)号：US5977548A

公开(公告)日：1999-11-02

申请号：US745632

申请日：1996-11-08

申请人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

发明人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

IPC分类号： H01J37/147 ,  H01J37/30 ,  H01J37/302 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/30416 ,  H01J2237/31762 ,  H01L2223/54466

摘要： A charged particle beam exposure method including steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.

摘要翻译： 一种带电粒子束曝光方法，包括以下步骤：产生指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到第二存储装置 存储装置具有第二较高访问速度，从第二存储装置读出点图案数据，并且响应于通过消隐孔径从第二存储装置读出的点图案数据产生多个带电粒子束 数组。 消隐孔径阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

公开(公告)号：US5969365A

公开(公告)日：1999-10-19

申请号：US917464

申请日：1997-08-26

申请人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

发明人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

IPC分类号： G21K5/10 ,  H01J37/08 ,  H01J37/302 ,  H01J37/304

CPC分类号： H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/1504 ,  H01J2237/216 ,  H01J2237/30472

摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

公开(公告)号：US5910658A

公开(公告)日：1999-06-08

申请号：US27470

申请日：1998-02-20

申请人： Soichiro Arai ,  Kenichi Miyazawa ,  Hidefumi Yabara ,  Hiroshi Yasuda ,  Takayuki Nakatani

发明人： Soichiro Arai ,  Kenichi Miyazawa ,  Hidefumi Yabara ,  Hiroshi Yasuda ,  Takayuki Nakatani

IPC分类号： H01J37/305 ,  G03F7/20 ,  H01J37/04 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/045 ,  H01J37/3174 ,  H01J2237/0435

摘要： Adjusting variable delay circuit 311, receiving signal S1, is connected to the input of drive circuit 312. A time point t1, when the output potential of drive circuit 312 traverses reference potential VA between the potential Va of traveling wave V1F of the output potential and 0 V, is detected by comparator 52 for detecting the front edge of V1F, detecting variable delay circuit 50 for delaying signal S1 and D flip-flop 51 for holding the output of comparator 52 at the timing of front edge of the signal outputted from delay circuit 50. A time point t2, when the output potential of drive circuit 312 traverses reference potential VB between the superimposed potential of traveling wave V1F and reflected wave V1B and VA, is detected by comparator 62 for detecting the front edge of V1B, detecting variable delay circuit 60 for delaying signal S1 and D flip-flop 61 for holding the output of comparator 62 at the timing of front edge of the signal outputted from delay circuit 60. The delay time of adjusting variable delay circuit 311 is set so that value {t1+(t2-t1)/2} becomes substantially same as to all the output potentials of drive circuit 31 and so on.

摘要翻译： 调节可变延迟电路311，接收信号S1连接到驱动电路312的输入端。时间点t1，当驱动电路312的输出电位在输出电位的行波V1F的电位Va和 0 V被比较器52检测，用于检测V1F的前沿，检测可变延迟电路50用于延迟信号S1和D触发器51，用于保持比较器52的输出在从延迟输出的信号的前沿的定时 当驱动电路312的输出电位在行波V1F和反射波V1B与VA之间的叠加电位之间经过参考电位VB时，由比较器62检测V1B的前沿，检测变量 延迟电路60，用于在从延迟电路60输出的信号的前沿的定时处延迟用于保持比较器62的输出的信号S1和D触发器61.延迟时间 设定调节可变延迟电路311的e值使得值{t1 +（t2-t1）/ 2}与驱动电路31的所有输出电位等基本相同。

公开(公告)号：US5895924A

公开(公告)日：1999-04-20

申请号：US602350

申请日：1996-02-16

申请人： Hiroshi Yasuda ,  Akio Yamada ,  Kazushi Ishida ,  Tohru Ikeda ,  Kouzi Takahata

发明人： Hiroshi Yasuda ,  Akio Yamada ,  Kazushi Ishida ,  Tohru Ikeda ,  Kouzi Takahata

IPC分类号： H01L21/027 ,  H01J37/317 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30455 ,  H01J2237/31761 ,  H01J2237/31774

摘要： A charged particle beam exposure method is adapted to an exposure apparatus which includes a plurality of exposure systems that simultaneously expose the same pattern. The method includes the steps of (a) generating, by a pattern generating unit in each exposure system, data related to patterns which are to be exposed, (b) deflecting, by a column unit in each exposure system, a charged particle beam onto an object which is mounted on a stage by deflecting the charged particle beam based on the data generated by the pattern generating unit in a corresponding exposure system, and (c) detecting an abnormality in the exposure apparatus during operation of the exposure apparatus based on data which are obtained from corresponding parts of the exposure systems.

摘要翻译： 带电粒子束曝光方法适用于包括同时暴露相同图案的多个曝光系统的曝光装置。 该方法包括以下步骤：（a）通过每个曝光系统中的图案生成单元生成与要曝光的图案相关的数据，（b）通过每个曝光系统中的列单元将带电粒子束偏转到 基于由对应的曝光系统中的图案生成单元产生的数据，通过使带电粒子束偏转来安装在舞台上的物体，以及（c）基于数据在曝光装置的操作期间检测曝光装置中的异常 其从曝光系统的相应部分获得。

公开(公告)号：US5874372A

公开(公告)日：1999-02-23

申请号：US959042

申请日：1997-10-28

申请人： Rokuro Morishita ,  Hiroshi Yasuda ,  Mitsura Seto ,  Hisao Nishinaka ,  Taizo Ikezawa

发明人： Rokuro Morishita ,  Hiroshi Yasuda ,  Mitsura Seto ,  Hisao Nishinaka ,  Taizo Ikezawa

IPC分类号： D03D15/08 ,  D03D3/00

CPC分类号： D03D15/08 ,  Y10T442/3008 ,  Y10T442/3146

摘要： The invention provides a highly stretchable fabric having an elongation percentage of 5 to 45% and a recovery percentage of elongation of at least 70% and comprising spun yarns serving at least as warps or wefts, the fabric being characterized in that the spun yarns contain two-component composite fibers comprising a highly shrinkable polyester component A and a polyester component B less shrinkable than the polyester component A, the composite fibers being so oriented that in the vicinity 5 of the crests of weaving crimps of the spun yarn, the polyester component A faces toward the inner side of the crimps. The invention also provides a process for producing the fabric. The fabric is excellent in stretchability and recovery from elongation and is capable of retaining its appearance and hand.

摘要翻译： 本发明提供了一种高伸缩率的织物，其伸长率为5至45％，伸长率的恢复百分比至少为70％，并且包括至少作为经纱或纬纱的纺织纱线，该织物的特征在于， - 组合复合纤维包含高收缩性聚酯组分A和比聚酯组分A低收缩的聚酯组分B，复合纤维被定向成使得在纺织纱线的编织卷曲的顶端附近，聚酯组分A 面向卷边的内侧。 本发明还提供了一种生产织物的方法。 该织物的拉伸性和伸长率恢复性优异，能够保持其外观和手感。

公开(公告)号：US5573591A

公开(公告)日：1996-11-12

申请号：US425444

申请日：1995-04-20

申请人： Kazuhiro Ikezawa ,  Hiroshi Yasuda ,  Akira Tanikawa ,  Hiroyuki Kojima ,  Koji Hosoda ,  Yoshifumi Kobayashi

发明人： Kazuhiro Ikezawa ,  Hiroshi Yasuda ,  Akira Tanikawa ,  Hiroyuki Kojima ,  Koji Hosoda ,  Yoshifumi Kobayashi

IPC分类号： C30B15/00 ,  C30B29/06 ,  H01L21/208 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A monocrystal pulling apparatus according to the Czochralski technique, provided with a flow controller which guides a carrier gas supplied from the top of a pulling cheer to the surface of a melt of a material forming the monocrystal and exhausts the silicon oxide vaporizing from the surface of the melt to the outside of the pulling chamber and which surrounds the pulled monocrystal near the surface of the melt and is provided partially inside a crucible, wherein the flow controller has a tubular portion which has an outer diameter smaller than the inner diameter of the crucible and extends substantially perpendicularly along the direction of downward flow of the carrier gas, a constricted diameter portion which constricts in diameter from the bottom end of the tubular portion and forms a bottom gap with the pulled monocrystal, and an engagement portion which projects out from the top of the tubular portion and forms a top gap at the outer circumference of the tubular portion of the flow controller by supporting the flow controller partially in the pulling chamber. As a result, a first flow path through which the carrier gas flows toward said bottom gap is defined between the inside of the tubular portion and the pulled monocrystal, a second flow path is defined comprised of a flow path of the carrier gas passing through the top gap and a flow path of the carrier gas passing from the first flow path through the bottom gap and then passing between the surface of the silicon melt and flow controller. The silicon oxide is exhausted together with the carrier gas through the second flow path to the outside of the pulling chamber.

摘要翻译： 根据切克劳斯基技术的单晶拉制装置，其具有流量控制器，该流量控制器将从拉动振动器的顶部供给的载气引导到形成单晶的材料的熔体的表面，并从其表面蒸发氧化硅 熔化到拉动室的外部并且围绕熔融物表面附近的被拉取的单晶体并且部分地设置在坩埚内部，其中流量控制器具有管状部分，其外径小于坩埚的内径 并且沿着载气向下流动的方向基本上垂直地延伸，所述收缩直径部分从所述管状部分的底端直径收缩并与所述拉制的单晶形成底部间隙;以及接合部分， 在管状部分的顶部并且在f的管状部分的外圆周处形成顶部间隙 低控制器通过部分地在牵引室中支撑流量控制器。 结果，载体气体朝向所述底部间隙流动的第一流动路径被限定在管状部分和拉出的单晶体的内部之间，第二流动路径被限定为穿过载体气体的载气的流动路径 顶部间隙和从第一流动通过底部间隙的载气的流动路径，然后在硅熔体的表面和流量控制器之间通过。 氧化硅与载气一起通过第二流动路径排出到拉动室的外部。

公开(公告)号：US5476065A

公开(公告)日：1995-12-19

申请号：US187551

申请日：1994-01-28

申请人： Kazuhiro Ikezawa ,  Hiroshi Yasuda ,  Akira Tanikawa ,  Hiroyuki Kojima ,  Koji Hosoda ,  Yoshifumi Kobayashi

发明人： Kazuhiro Ikezawa ,  Hiroshi Yasuda ,  Akira Tanikawa ,  Hiroyuki Kojima ,  Koji Hosoda ,  Yoshifumi Kobayashi

IPC分类号： C30B15/00 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A monocrystal pulling apparatus according to the Czochralski technique, provided with a flow controller which guides a carrier gas supplied from the top of a pulling chamber to the surface of a melt of a material forming the monocrystal and exhausts the silicon oxide vaporizing from the surface of the melt to the outside of the pulling chamber and which surrounds the pulled monocrystal near the surface of the melt and is provided partially inside a crucible, wherein the flow controller has a tubular portion which has an outer diameter smaller than the inner diameter of the crucible and extends substantially perpendicularly along the direction of downward flow of the carrier gas, a constricted diameter portion which constricts in diameter from the bottom end of the tubular portion and forms a bottom gap with the pulled monocrystal, and an engagement portion which projects out from the top of the tubular portion and forms a top gap at the outer circumference of the tubular portion of the flow controller by supporting the flow controller partially in the pulling chamber. As a result, a first flow path through which the carrier gas flows toward said bottom gap is defined between the inside of the tubular portion and the pulled monocrystal, a second flow path is defined comprised of a flow path of the carrier gas passing through the top gap and a flow path of the carrier gas passing from the first flow path through the bottom gap and then passing between the surface of the silicon melt and flow controller. The silicon oxide is exhausted together with the carrier gas through the second flow path to the outside of the pulling chamber.

摘要翻译： 根据切克劳斯基技术的单晶拉制装置，其具有流量控制器，该流量控制器将从拉动室的顶部供给的载气引导到形成单晶的材料的熔体的表面，并从形成单晶的表面蒸发氧化硅 熔化到拉动室的外部并且围绕熔融物表面附近的被拉取的单晶体并且部分地设置在坩埚内部，其中流量控制器具有管状部分，其外径小于坩埚的内径 并且沿着载气向下流动的方向基本上垂直地延伸，所述收缩直径部分从所述管状部分的底端直径收缩并与所述拉制的单晶形成底部间隙;以及接合部分， 在管状部分的顶部，并且在管状部分的外圆周处形成顶部间隙 流量控制器通过部分地在牵引室中支撑流量控制器。 结果，载体气体朝向所述底部间隙流动的第一流动路径被限定在管状部分和拉出的单晶体的内部之间，第二流动路径被限定为穿过载体气体的载气的流动路径 顶部间隙和从第一流动通过底部间隙的载气的流动路径，然后在硅熔体的表面和流量控制器之间通过。 氧化硅与载气一起通过第二流动路径排出到拉动室的外部。