公开(公告)号：US20050001536A1

公开(公告)日：2005-01-06

申请号：US10827813

申请日：2004-04-20

Applicant: Makoto Yamamoto ,  Keisuke Koga ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

Inventor： Makoto Yamamoto ,  Keisuke Koga ,  Akinori Shiota ,  Seigo Kanemaru ,  Masayoshi Nagao

IPC: H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

Abstract: A field emission electron source capable of achieving large current density is provided at low cost with good productivity. An insulating layer is formed on a substrate and has one or more openings; and an extraction electrode is formed on the insulating layer. In one or more of the openings, a plurality of emitters, each of which emits an electron by an electric field from the extraction electrode, are formed on the substrate.

Abstract translation: 以低成本提供能够实现大电流密度的场致发射电子源，生产率高。 绝缘层形成在基板上并具有一个或多个开口; 并且在绝缘层上形成引出电极。 在一个或多个开口中，在基板上形成多个发射体，每个发射体通过来自引出电极的电场发射电子。

公开(公告)号：US20040090162A1

公开(公告)日：2004-05-13

申请号：US10699252

申请日：2003-10-30

Inventor： Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC: H01J001/02

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: The present invention relates to a field emission device including a silicon substrate having an emitter electrode formed in a surface portion thereof, an insulating layer formed on the emitter electrode and having a nano hole to expose the emitter electrode. An emitter is formed on the emitter electrode exposed through the nano hole. A gate electrode is formed on the insulating layer. The present invention can reduce the driving voltage and thus lower the power consumption.

Abstract translation: 本发明涉及一种场发射器件，其包括在其表面部分形成有发射电极的硅衬底，形成在发射极电极上并具有纳米孔以暴露发射极的绝缘层。 在通过纳米孔暴露的发射极电极上形成发射极。 在绝缘层上形成栅电极。 本发明可以降低驱动电压，从而降低功耗。

公开(公告)号：US06729923B2

公开(公告)日：2004-05-04

申请号：US10160413

申请日：2002-05-30

Applicant: Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

Inventor： Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC: H01L2100

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.

Abstract translation: 场致发射器件及其制造方法技术领域本发明涉及场致发射器件及其制造方法。 该方法包括使用硅半导体工艺形成具有纳米尺寸的孔，然后在孔内形成发射体以形成场致发射器件。 因此，本发明可以降低驱动电压，从而降低功耗。

公开(公告)号：US06690077B1

公开(公告)日：2004-02-10

申请号：US09527771

申请日：2000-03-17

Applicant: Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

Inventor： Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

IPC: H01L310232

CPC classification number: H01L21/76849 ,  H01J1/52 ,  H01J29/896 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/319 ,  H01L21/0276 ,  H01L21/32139 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76885 ,  H01L23/53223 ,  H01L31/02161 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Titanium aluminum nitrogen (“Ti—Al—N”) is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti—Al—N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti—Al—N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti—Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.

Abstract translation: 将钛铝氮（“Ti-Al-N”）沉积到半导体衬底区域上以用作抗反射涂层。 对于布线生产工艺，Ti-Al-N层用作遮盖层，防止在制造过程中光刻光（即光子）的不期望的反射。 对于场致发射显示装置（FED），Ti-Al-N层防止在显示屏阳极处产生的光穿透将阻碍器件工作的晶体管结。 对于布线实施例，在抗反射盖层下方形成铝导电层和钛 - 铝底层。 Ti-Al底层减少了在热处理期间在铝导电层中发生的收缩。

公开(公告)号：US06680489B1

公开(公告)日：2004-01-20

申请号：US09557165

申请日：2000-04-25

Applicant: George R. Brandes ,  Chris S. Christos ,  Xueping Xu

Inventor： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC: H01L310312

CPC classification number: H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract translation: 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US06565403B1

公开(公告)日：2003-05-20

申请号：US09555847

申请日：2000-06-05

Applicant: Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

Inventor： Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

IPC: H01J902

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30403

Abstract: Patterned ion-bombarded graphite electron emitters are disclosed as well as processes for producing them. The electron emitters are produced by forming a layer of composite of graphite particles and glass on a substrate then bombarding the composite with an ion beam. The electron emitters are useful in field emitter cathode assemblies which are fabricated into flat panel displays.

Abstract translation: 公开了图案化的离子轰击的石墨电子发射体以及它们的制造方法。 通过在衬底上形成石墨颗粒和玻璃的复合材料层，然后用离子束轰击复合材料来制造电子发射体。 电子发射器在制造成平板显示器的场发射极阴极组件中是有用的。

公开(公告)号：US20030015958A1

公开(公告)日：2003-01-23

申请号：US10243830

申请日：2002-09-16

Inventor： Ichiro Saito ,  Koichi Iida ,  Tokiko Takahashi

IPC: H01J001/62

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00 ,  Y10S977/773

Abstract: The present invention provides an electron emission device assured to emit electrons without requiring film thickness control in the order of submicrons and production method of the electron emission device as well as a display apparatus using the electron emission device. The electron emission device includes a cathode electrode consisting of conductive fine particles adhered directly onto a substrate and electrons are emitted from these conductive fine particles when a predetermined electric field is applied.

Abstract translation: 本发明提供了一种电子发射装置，其以电子发射装置的亚微米级和制造方法以及使用该电子发射装置的显示装置而不需要薄膜厚度控制而发射电子。 电子发射装置包括由直接粘附到基板上的导电细颗粒组成的阴极电极，并且当施加预定电场时，从这些导电细颗粒发射电子。

公开(公告)号：US06452328B1

公开(公告)日：2002-09-17

申请号：US09232847

申请日：1999-01-19

Applicant: Ichiro Saito ,  Koichi Iida ,  Tokiko Takahashi

Inventor： Ichiro Saito ,  Koichi Iida ,  Tokiko Takahashi

IPC: H01J3115

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00 ,  Y10S977/773

Abstract: The present invention provides an electron emission device assured to emit electrons without requiring film thickness control on the order of submicrons and a production method of the electron emission device as well as a display apparatus using the electron emission device. The electron emission device includes a cathode electrode consisting of conductive fine particles adhered directly onto a substrate and electrons are emitted from these conductive fine particles when a predetermined electric field is applied.

Abstract translation: 本发明提供一种确保发射电子而不需要亚微米级的薄膜厚度控制的电子发射装置和电子发射装置的制造方法以及使用该电子发射装置的显示装置。 电子发射装置包括由直接粘附到基板上的导电细颗粒组成的阴极电极，并且当施加预定电场时，从这些导电细颗粒发射电子。

公开(公告)号：US06423239B1

公开(公告)日：2002-07-23

申请号：US09591192

申请日：2000-06-08

Applicant: David A. Cathey ,  Kevin Tjaden

Inventor： David A. Cathey ,  Kevin Tjaden

IPC: H01J900

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.

Abstract translation: 一种制造尖锐凹凸的方法。 提供了具有设置在其上的掩模层的基板，并且在该掩模层的上方布置一层微球。 微球用于图案化掩模层。 选择性地去除掩模层的一部分，从而形成圆形掩模。 基板被各向同性地蚀刻，从而产生尖锐的凹凸。

公开(公告)号：US06400091B1

公开(公告)日：2002-06-04

申请号：US09525546

申请日：2000-03-14

Applicant: Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

Inventor： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

IPC: G09G310

CPC classification number: B82Y10/00 ,  H01J3/021 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/901 ,  Y10S977/939

Abstract: An electron emission element of the present invention includes a substrate, a cathode formed on the substrate, an anode opposed to the cathode, an electron emission member disposed on the cathode, and a control electrode disposed between the cathode and the anode. During operation, the electric field intensity immediately above the electron emission member is lower than that between the control electrode and the anode. Alternatively, the spatial average of an electric field intensity between the electron emission member and the control electrode is smaller than that between the control electrode and the anode.

Abstract translation: 本发明的电子发射元件包括基板，形成在基板上的阴极，与阴极相对的阳极，设置在阴极上的电子发射部件，以及设置在阴极和阳极之间的控制电极。 在操作期间，电子发射构件正上方的电场强度低于控制电极和阳极之间的电场强度。 或者，电子发射构件和控制电极之间的电场强度的空间平均值小于控制电极和阳极之间的电场强度的空间平均值。