Abstract:
Combination circuitry includes a relatively small preamplifier and includes hybrid circuitry. The hybrid circuitry is configured to perform mode switching while also performing some amplification, thus allowing the relatively small preamplifier to be smaller than a conventional power amplifier. In one embodiment, the hybrid circuitry includes first series portion configured to amplify when ON, a first shunt portion, a second series portion configured to amplify when ON, and a second shunt portion. The first series portion may include: a first transistor; a first variable impedance in communication with a gate of the first transistor, wherein the first variable impedance is configured to receive a first transistor control signal; a second transistor in series with the first transistor; and a second variable impedance in communication with a gate of the second transistor, wherein second variable impedance is configured to receive a second transistor control signal.
Abstract:
The present disclosure relates to RF front-end (RFFE) circuitry that includes multiple RFFE circuits, each of which may be provided by a separate integrated circuit (IC), front-end module, or both. As such, the RFFE circuits may be connected to one another using an RFFE serial communications bus. Further, one or more of the RFFE circuits may need an accurate clock source for analog-to-digital conversion (ADC), digital-to-analog conversion (DAC), calibration, sensor measurements, or the like. Instead of including an integral clock source circuit or receiving a separate external clock signal, an RFFE circuit may extract clock information from the RFFE serial communications bus to provide one or more clock signals. The clock information may be associated with one or more serial communications commands via the RFFE serial communications bus, may be associated with alternate functionality of the RFFE serial communications bus, or both.
Abstract:
The described devices, systems and methods include an electro-static discharge clamp with a latch to prevent false triggering of an electro-static discharge protection circuit in response to fluctuations in a power supply rail.
Abstract:
Radio frequency (RF) circuitry, which includes a time division duplex (TDD)/frequency division duplex (FDD) driver stage, a TDD final stage, an FDD final stage, and power directing circuitry, is disclosed. The power directing circuitry is coupled between the TDD/FDD driver stage and the TDD final stage, and is further coupled between the TDD/FDD driver stage and the FDD final stage.
Abstract:
Radio frequency (RF) front end circuitry includes a notch diplexer. The notch diplexer includes a high pass filter coupled between a high band port and an antenna port, and a low pass notch filter coupled between a low band port and the antenna port. The high pass filter is adapted to receive a high band receive signal having a high band carrier frequency at the antenna port, and pass the high band receive signal to the high band port. The low pass notch filter is adapted to receive a low band transmit signal having a low band carrier frequency at the low band port, and attenuate distortion in the low band transmit signal about a notch stop band before passing the low band transmit signal to the antenna port. According to one embodiment, the notch stop band includes the high band carrier frequency.
Abstract:
Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
Abstract:
Antenna switching circuitry comprises a plurality of communication ports, an antenna port, a plurality of switches, and an ESD protection device. The plurality of switches are adapted to selectively couple one or more of the communication ports to the antenna port in order to transmit or receive a signal. The ESD protection device is coupled between one of the plurality of communication ports and ground, and is adapted to form a substantially low impedance path to ground during an ESD event. Upon the occurrence of an ESD event, a received electrostatic charge passes through one or more of the plurality of switches to the ESD protection device, where it is safely diverted to ground. By using only one ESD protection device, desensitization of the antenna switching circuitry due to the parasitic loading of the ESD protection device is avoided. Further, the area of the antenna switching circuitry is minimized.
Abstract:
Pilot switch circuitry grounds a hot node (an injection node) of a microelectromechanical system (MEMS) switch to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS come into contact with one another (when the MEMS switch is closed). Additionally, the pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS disengage from one another (when the MEMS switch is opened).
Abstract:
A tunable radio frequency (RF) duplexer is disclosed. The tunable RF duplexer includes a first hybrid coupler, a second hybrid coupler, and an RF filter circuit. The first hybrid coupler is operable to split an RF receive input signal into first and second RF quadrature hybrid receive signals (QHRSs). The first hybrid coupler is also operable to split an RF transmission input signal into first and second RF quadrature hybrid transmission signals (QHTSs). The RF filter circuit is operable to pass the first and second RF QHRSs to the second hybrid coupler and to reflect the first and second RF QHTSs back to the first hybrid coupler. Additionally, the second hybrid coupler is configured to combine the first and second RF QHRSs into an RF receive output signal, while the first hybrid coupler is configured to combine the first and second RF QHTSs into an RF transmission output signal.
Abstract:
Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
Abstract translation:功率放大器和在功率放大器上涂覆氧化铝保护膜(Al 2 O 3)的方法在此公开。 通过原子层沉积(ALD)工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。 因此,ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。