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    Metal-semiconductor intermixed regions
    132.
    发明授权
    Metal-semiconductor intermixed regions 有权
    金属半导体混合区域

    公开(公告)号：US08278200B2

    公开(公告)日：2012-10-02

    申请号：US13012043

    申请日：2011-01-24

    Applicant: Christian Lavoie ,  Tak H. Ning ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

    Inventor： Christian Lavoie ,  Tak H. Ning ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

    IPC: H01L21/20

    CPC classification number: H01L21/28518

    Abstract: In one exemplary embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, said operations including: depositing a first layer having a first metal on a surface of a semiconductor structure, where depositing the first layer creates a first intermix region at an interface of the first layer and the semiconductor structure; removing a portion of the deposited first layer to expose the first intermix region; depositing a second layer having a second metal on the first intermix region, where depositing the second layer creates a second intermix region at an interface of the second layer and the first intermix region; removing a portion of the deposited second layer to expose the second intermix region; and performing at least one anneal on the semiconductor structure.

    Abstract translation: 在一个示例性实施例中，一种可由机器读取的程序存储设备，其有形地体现了可由机器执行的用于执行操作的指令程序，所述操作包括：在半导体结构的表面上沉积具有第一金属的第一层， 第一层在第一层和半导体结构的界面处形成第一混合区; 去除沉积的第一层的一部分以暴露第一混合区; 在所述第一混合区域上沉积具有第二金属的第二层，其中沉积所述第二层在所述第二层和所述第一混合区的界面处产生第二混合区; 去除沉积的第二层的一部分以暴露第二混合区; 以及在所述半导体结构上执行至少一个退火。

    Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide
    134.
    发明授权
    Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide 有权
    用于形成SOI肖特基源极/漏极器件以控制硅化物侵蚀和分层的方法

    公开(公告)号：US08168503B2

    公开(公告)日：2012-05-01

    申请号：US12726736

    申请日：2010-03-18

    Applicant: Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    Inventor： Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    IPC: H01L21/336

    CPC classification number: H01L29/7839 ,  H01L29/78654

    Abstract: A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

    Abstract translation: 提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。 栅极结构直接形成在第一半导体层上。 凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。 凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。 在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

    Method of document protection
    137.
    发明授权
    Method of document protection 有权
    文件保护方法

    公开(公告)号：US08120795B2

    公开(公告)日：2012-02-21

    申请号：US11991394

    申请日：2006-04-29

    Applicant: Wenfa Qi ,  Jiquan Xie ,  Bin Yang ,  Xiaohong Ding ,  Jiang Deng

    Inventor： Wenfa Qi ,  Jiquan Xie ,  Bin Yang ,  Xiaohong Ding ,  Jiang Deng

    IPC: G06F15/00 ,  G06K9/00

    CPC classification number: H04N1/00846 ,  G03G21/046 ,  G03G2215/00932 ,  H04N1/00875 ,  H04N1/00883

    Abstract: This invention relates to a method for preventing a copy of document, belonging to a technical field of entire copy protection of document. In the prior art, for some important documents, specially the secret ones, the reproduction of this kind of document is usually prohibited by its owner because of the security. But the technique in the prior art can not solve the problem of preventing unauthorized reproduction. The method of the present invention is intended to embed a shading pattern under the original image of anti-copy document by an application program installed in the copy device, and decide whether the document can be copied legally or not. By the method of present invention, it is possible to detect the watermark information of the anti-copy document accurately and quickly, and prevent the reproduction of the anti-copy document thoroughly. Moreover, an additional memory space is no need.

    Abstract translation: 本发明涉及一种防止文件副本的方法，属于整个文件复制保护的技术领域。 在现有技术中，对于一些重要的文件，特别是秘密的文件，这种文件的复制通常由于所有者的安全而被禁止。 但是现有技术中的技术不能解决防止未授权再现的问题。 本发明的方法是通过安装在复印装置中的应用程序将遮蔽图案嵌入到防拷贝文件的原始图像之下，并且决定是否可以合法复制文档。 通过本发明的方法，可以准确而快速地检测防拷贝文件的水印信息，并且防止反复制文件的再现彻底。 此外，不需要额外的内存空间。

    ACCELEROMETER
    138.
    发明申请
    ACCELEROMETER 有权
    加速度计

    公开(公告)号：US20110296916A1

    公开(公告)日：2011-12-08

    申请号：US13015987

    申请日：2011-01-28

    Applicant: Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

    Inventor： Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

    IPC: G01P15/125

    CPC classification number: G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0848 ,  G01P2015/0854

    Abstract: A accelerometer includes a substrate define a stationary electrode thereon, a first moveable mass defining a conductive-layer thereon facing the stationary electrode, a plurality of first elastic elements coupled with a peripheral side of the first moveable mass, a first fixed element surrounding the first moveable mass and fixedly attached to the substrate, a plurality of first fixed electrodes extending outwardly from the first fixed element, a second moveable mass surrounding the first fixed electrodes, a plurality of first moveable electrodes extending inwardly from the second moveable mass toward the first fixed to element and parallel to the first fixed electrodes, respectively, a plurality of second elastic elements coupled with a peripheral side of the second moveable mass, and a second fixed element surrounding the second moveable mass and fixedly attached to the substrate.

    Abstract translation: 加速度计包括在其上限定固定电极的基板，限定其面向固定电极的导电层的第一可移动质量块，与第一可移动质量块的周边连接的多个第一弹性元件，围绕第一 可移动的质量并且固定地附接到基板，从第一固定元件向外延伸的多个第一固定电极，围绕第一固定电极的第二可移动质量;从第二可移动质量向内朝向第一固定 分别连接到第一固定电极的元件并且与第二可移动质量体的周边连接的多个第二弹性元件和围绕第二可移动块并固定地附接到基板的第二固定元件。

    SHALLOW TRENCH ISOLATION EXTENSION
    139.
    发明申请
    SHALLOW TRENCH ISOLATION EXTENSION 有权
    浅层分离分离扩展

    公开(公告)号：US20110284985A1

    公开(公告)日：2011-11-24

    申请号：US12783914

    申请日：2010-05-20

    Applicant: Yanxiang Liu ,  Bin Yang

    Inventor： Yanxiang Liu ,  Bin Yang

    IPC: H01L29/06 ,  H01L21/762

    CPC classification number: H01L21/76229 ,  H01L21/76237

    Abstract: A semiconductor device is formed with extended STI regions. Embodiments include implanting oxygen under STI trenches prior to filling the trenches with oxide and subsequently annealing. An embodiment includes forming a recess in a silicon substrate, implanting oxygen into the silicon substrate below the recess, filling the recess with an oxide, and annealing the oxygen implanted silicon. The annealed oxygen implanted silicon extends the STI region, thereby reducing leakage current between N+ diffusions and N-well and between P+ diffusions and P-well, without causing STI fill holes and other defects.

    Abstract translation: 半导体器件形成有延伸的STI区域。 实施例包括在用氧化物填充沟槽并随后退火之前在STI沟槽下注入氧气。 一个实施例包括在硅衬底中形成凹槽，将氧注入到凹陷下方的硅衬底中，用氧化物填充凹槽，并对氧注入的硅进行退火。 退火的氧注入硅延伸STI区域，从而减少N +扩散与N阱之间以及P +扩散与P阱之间的漏电流，而不会引起STI填充孔和其他缺陷。

    Image Processing Method and Apparatus
    140.
    发明申请
    Image Processing Method and Apparatus 失效
    图像处理方法和装置

    公开(公告)号：US20110279872A1

    公开(公告)日：2011-11-17

    申请号：US13124708

    申请日：2009-10-19

    Applicant: Haifeng Li ,  Shixiong Ma ,  Bin Yang ,  Lidong Wang

    Inventor： Haifeng Li ,  Shixiong Ma ,  Bin Yang ,  Lidong Wang

    IPC: H04N1/405

    CPC classification number: H04N1/52

    Abstract: An image processing method includes: generating a stochastic screening dither matrix (S101); performing a centered positive-negative conversion operation on the stochastic screening dither matrix (S102); generating a screen dot dither contrast matrix for each color surface according to the stochastic screening dither matrix after being subjected to the positive-negative conversion operation and a stochastic screening dither threshold set for each color surface of an image; performing a logical “and” operation between each data item in a one-bit amplitude modulation screen dot matrix of each color surface of the image and a data item at a corresponding position in the screen dot dither contrast matrix of the color surface, and using a result as a processed value of a corresponding data item in the one-bit amplitude modulation screen dot matrix of the color surface. An apparatus corresponding to the image processing method is also provided. According to the above-described image processing method and apparatus, the problem in the prior art of an excess of pure-color pixels existing in an original one-bit dot matrix can be resolved.

    Abstract translation: 一种图像处理方法包括：产生随机筛选抖动矩阵（S101）; 对随机筛选抖动矩阵执行中心正负转换操作（S102）; 根据随机筛选抖动矩阵在进行正负转换操作之后产生每个颜色表面的屏幕点抖动对比度矩阵，以及为图像的每个颜色表面设置的随机屏蔽抖动阈值; 在图像的每个颜色表面的一位幅度调制屏幕点阵中的每个数据项之间执行逻辑“和”操作，以及在颜色表面的屏幕点抖动对比矩阵中的相应位置处的数据项，并且使用 作为颜色表面的一位幅度调制屏幕点阵中的相应数据项的处理值的结果。 还提供了与图像处理方法对应的装置。 根据上述图像处理方法和装置，可以解决现有技术中存在于原始一位点阵中的纯色像素的过剩问题。

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