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    Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
    132.
    发明授权
    Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO) 有权
    具有侧壁侧向外延生长（SLEO）的非极性和半极性III-氮化物的缺陷还原

    公开(公告)号：US07955983B2

    公开(公告)日：2011-06-07

    申请号：US12041398

    申请日：2008-03-03

    申请人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars

    发明人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars

    IPC分类号： B32B9/00 ,  B32B19/00 ,  H01L29/20 ,  H01L29/06 ,  H01L29/04

    CPC分类号： H01L21/02609 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

    摘要： A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

    摘要翻译： 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在介电掩模上横向生长，直到实现完全聚结的连续膜。

    SINGLE OR MULTI-COLOR HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) BY GROWTH OVER A PATTERNED SUBSTRATE
    133.
    发明申请
    SINGLE OR MULTI-COLOR HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) BY GROWTH OVER A PATTERNED SUBSTRATE 有权
    单色或多色高效率发光二极管（LED）通过生长在图案基板上

    公开(公告)号：US20100295081A1

    公开(公告)日：2010-11-25

    申请号：US12793862

    申请日：2010-06-04

    申请人： Claude C. A. Weisbuch ,  Aurelien J. F. David ,  James S. Speck ,  Steven P. DenBaars

    发明人： Claude C. A. Weisbuch ,  Aurelien J. F. David ,  James S. Speck ,  Steven P. DenBaars

    IPC分类号： H01L33/58 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L2933/0083

    摘要： A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

    摘要翻译： 具有高提取效率的单色或多色发光二极管（LED）由衬底，形成在衬底上的缓冲层，沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成 在图案化层之间或之间，例如通过横向外延生长（LEO），并且包括一个或多个发光物质，例如量子阱。 图案化层包括由绝缘，半导体或金属材料制成的图案化，穿孔或穿孔掩模，以及填充掩模中的孔的材料。 由于掩模和填充掩模中的孔的材料之间的折射率的变化，由于折射率与有源层和/或作为掩埋衍射光栅的对比，图案化层用作光学限制层。

    DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO)
    136.
    发明申请
    DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO) 有权
    减少非极性和半极性III-氮素与侧壁外延生长（SLEO）的缺陷

    公开(公告)号：US20080185690A1

    公开(公告)日：2008-08-07

    申请号：US12041398

    申请日：2008-03-03

    申请人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars

    发明人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars

    IPC分类号： H01L29/06

    CPC分类号： H01L21/02609 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

    摘要： A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

    摘要翻译： 通过使用横向外延过度生长，减少非极性（例如 - {11-20}面和m- {1-100}面或半极性，例如{10-1n}面III-氮化物）的穿透位错密度的方法 从蚀刻的模板材料的侧壁通过图案化掩模。 该方法包括在诸如非极性或半极性GaN模板的模板材料上沉积图案化掩模，通过掩模中的开口将模板材料蚀刻到各种深度，以及通过掩模中的开口生长非极性或半极性III-氮化物 在来自沟槽底部的垂直生长的材料到达侧壁的顶部之前，从侧壁的顶部侧向聚结。 聚结的特征通过掩模的开口生长，并且在介电掩模上横向生长，直到实现完全聚结的连续膜。

    CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL
    139.
    发明申请
    CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL 审中-公开
    控制III-III型氮化物晶体的三元氮化镓晶体的不同暴露晶体生长面积的相对生长速率

    公开(公告)号：US20110209659A1

    公开(公告)日：2011-09-01

    申请号：US13128105

    申请日：2009-11-04

    申请人： Siddha Pimputkar ,  Derrick S. Kamber ,  James S. Speck ,  Shuji Nakamura

    发明人： Siddha Pimputkar ,  Derrick S. Kamber ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： C30B19/10

    CPC分类号： H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02609 ,  H01L21/02628 ,  Y10T117/1024

    摘要： A method for controlling the relative and absolute growth rates of all possible crystallographic planes of a group-III nitride crystal during ammonothermal growth. The growth rates of the various exposed crystallographic planes of the group-III nitride crystal are controlled by modifying the environment and/or conditions within the reactor vessel, which may be subdivided into a plurality of separate zones, wherein each of the zones has their own environment and conditions. The environment includes the amount of atoms, compounds and/or chemical complexes within each of the zones, along with their relative ratios and the relative motion of the atoms, compounds and/or chemical complexes within each of the zones and among the zones. The conditions include the thermodynamic properties each of the zones possess, such as temperatures, pressures and/or densities.

    摘要翻译： 一种用于在氨热生长期间控制III族氮化物晶体的所有可能晶面的相对和绝对生长速率的方法。 III族氮化物晶体的各种暴露的结晶平面的生长速率通过改变反应器容器内的环境和/或条件来控制，反应器容器可以细分成多个分开的区域，其中每个区域具有它们自己的区域 环境和条件。 环境包括每个区域内的原子，化合物和/或化学配合物的数量，以及它们的相对比例以及每个区域内和区域之间的原子，化合物和/或化学配合物的相对运动。 条件包括每个区域具有的热力学性质，例如温度，压力和/或密度。