公开(公告)号：US20170179298A1

公开(公告)日：2017-06-22

申请号：US15450391

申请日：2017-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20170170334A1

公开(公告)日：2017-06-15

申请号：US15444692

申请日：2017-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/105 ,  H01L29/66 ,  H01L21/02 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02667 ,  H01L23/564 ,  H01L27/1052 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Stable electric characteristics and high reliability are provided to a miniaturized and integrated semiconductor device including an oxide semiconductor. In a transistor (a semiconductor device) including an oxide semiconductor film, the oxide semiconductor film is provided along a trench (groove) formed in an insulating layer. The trench includes a lower end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the lower end corner portion.

公开(公告)号：US20170110588A1

公开(公告)日：2017-04-20

申请号：US15389846

申请日：2016-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L21/02109 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

公开(公告)号：US20160254167A1

公开(公告)日：2016-09-01

申请号：US15149464

申请日：2016-05-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L21/477 ,  H01L21/383 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

公开(公告)号：US20160247930A1

公开(公告)日：2016-08-25

申请号：US15146980

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/04 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US20160181405A1

公开(公告)日：2016-06-23

申请号：US15057445

申请日：2016-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L21/465 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US20160064505A1

公开(公告)日：2016-03-03

申请号：US14935553

申请日：2015-11-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Hitomi SATO ,  Yuhei SATO

IPC: H01L29/49 ,  H01L21/288 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/4908 ,  H01L21/28088 ,  H01L21/288 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/7869

Abstract: To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.

Abstract translation: 制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。 使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。 使用包含其组成被控制的氧化钨膜的栅电极。 通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。 通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。 通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

公开(公告)号：US20160035902A1

公开(公告)日：2016-02-04

申请号：US14819801

申请日：2015-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US20160020332A1

公开(公告)日：2016-01-21

申请号：US14867636

申请日：2015-09-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US20160013324A1

公开(公告)日：2016-01-14

申请号：US14861289

申请日：2015-09-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

Abstract translation: 抑制了包括作为半导体膜的氧化物半导体的晶体管上的层间绝缘膜的半导体器件的电特性的变化。 该结构包括第一绝缘膜，其包括在半导体膜上方的由源电极和漏极形成的阶梯区域中的空隙部分，并且包含氧化硅作为部件，并且包含氮化硅的第二绝缘膜，其设置在 与第一绝缘膜接触以覆盖第一绝缘膜中的空隙部分。 该结构可以防止第一绝缘膜中产生的空隙部向外扩展。