Abstract:
The mobile radio receiver comprises a variable amplifier (3), a first means (9, 10) for comparison of a signal, which is characteristic of the amplitude of a received signal, with at least one analogue comparison value (PDTHR), a second means (13, 14, 17) for comparison of a signal, which is characteristic of the amplitude of a received signal, with at least one digital comparison value (RSSITHR), and a third means (17, 11) for setting the gain, which is driven by the first means (9, 10) and by the second means (13, 14, 17).
Abstract:
A Variable Gain Amplifier (VGA) amplifies an input signal according to a gain, to produce an amplified signal. A detector module detects a power indicative of a power of the amplified signal. A comparator module compares the detected power to a high threshold, a low threshold and a target threshold intermediate the high and low thresholds. A controller module changes the gain of the VGA so as to drive the detected power in a direction toward the middle threshold when the comparator module indicates the detected power is not between the high and low thresholds.
Abstract:
An amplifier comprises a first amplifier circuit which amplifies a first signal to output an amplified first signal, a circuit which outputs a second signal corresponding to a difference between the first signal and the amplified first signal, a second amplifier circuit which amplifies the second signal to output an amplified second signal, a combine circuit which outputs an amplified signal by combining the amplified second signal with the amplified first signal, and a controller which controls a supply of a power to the first amplifier circuit and the second amplifier circuit and has a first mode to supply the power to the second amplifier circuit without supplying the power to the first amplifier circuit.
Abstract:
The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. There is provided a high frequency power amplifier having a plurality of amplifying systems, characterized in that each of the amplifying systems comprises an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input terminal and output terminal, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage, in that the amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage, and in that a first amplifying stage and a second amplifying stage of each of the amplifying systems are monolithically formed on a single semiconductor chip, and a part of bias resistors that constitute bias circuits of the first amplifying stage and second amplifying stage are monolithically formed on the semiconductor chip.
Abstract:
A dynamically varying linearity system “DVLS” capable of varying the linearity of a radio frequency (RF) front-end of a communication device responsive to receiving a condition signal indicating a desired mode of operation of a transmitter. The DVLS may include a condition signal indicative of the desired mode of operation and a controller that adjusts the linearity of the transmitter responsive to the condition signal. The condition signal may be responsive to a user interface. The controller, responsive to the condition signal, may dynamically adjust the operating current of the transmitter.
Abstract:
The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. There is provided a high frequency power amplifier having a plurality of amplifying systems, characterized in that each of the amplifying systems comprises an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input terminal and output terminal, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage, in that the amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage, and in that a first amplifying stage and a second amplifying stage of each of the amplifying systems are monolithically formed on a single semiconductor chip, and a part of bias resistors that constitute bias circuits of the first amplifying stage and second amplifying stage are monolithically formed on the semiconductor chip.