公开(公告)号：US06489251B2

公开(公告)日：2002-12-03

申请号：US09777877

申请日：2001-02-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21302

CPC classification number: H01L27/11253 ,  H01L27/112 ,  H01L27/1122

Abstract: The present invention discloses a method of forming a slope lateral structure. In this invention, the silicon nitride and the silicon hydroxide with different etching rates are used. Thus, when the silicon nitride is etching, the top and laterals portion of the silicon hydroxide is suffering the slight etching. So that, when the silicon nitride is etched completely, a slope lateral silicon hydroxide is formed, because of the different etching time on the top and the bottom portion of the silicon hydroxide. Using the present invention, the conventional NROM process problem, which the wordlines are connected by the residue on the laterals of the protective layer after etching process can be solved.

Abstract translation: 本发明公开了一种形成倾斜侧面结构的方法。 在本发明中，使用具有不同蚀刻速率的氮化硅和氢氧化硅。 因此，当氮化硅蚀刻时，氢氧化硅的顶部和侧面部分遭受轻微蚀刻。 因此，当氮化硅被完全蚀刻时，由于氢氧化硅的顶部和底部上的蚀刻时间不同，因此形成斜面侧向氢氧化硅。 使用本发明，可以解决在蚀刻处理之后，保护层的边缘上的残留物与字线连接的常规NROM工艺问题。

公开(公告)号：US06423147B1

公开(公告)日：2002-07-23

申请号：US09682134

申请日：2001-07-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: B08B300

CPC classification number: H01L21/02052 ,  B08B3/08 ,  H01L21/321 ,  Y10S134/902

Abstract: A method of removing small particles remaining on a surface of a semiconductor wafer and preventing a silicide layer covering the semiconductor wafer from corroding starts by controlling a temperature of the semiconductor wafer to between room temperature and 45° C. Then, a cleaning solution of a temperature between 0° C. and 45° C. is utilized to clean the semiconductor wafer to effectively remove small particles remaining on the surface of the semiconductor wafer and prevent the silicide layer from corrosion by the cleaning solution. Therein, the cleaning solution is comprised of a pre-determined volume ratio of hydrogen peroxide (H2O2), ammonia (NH4OH), and deionized water.

Abstract translation: 通过将半导体晶片的温度控制在室温和45℃之间，去除残留在半导体晶片表面上的小颗粒并防止覆盖半导体晶片的硅化物层腐蚀开始的方法。然后， 使用0℃至45℃之间的温度来清洁半导体晶片以有效地去除残留在半导体晶片表面上的小颗粒，并防止硅化物层被清洁溶液腐蚀。 其中，清洁溶液由预定体积比的过氧化氢（H 2 O 2），氨（NH 4 OH）和去离子水组成。

公开(公告)号：US11012549B2

公开(公告)日：2021-05-18

申请号：US15808864

申请日：2017-11-09

Applicant: Chi-Wen Liu ,  Ching-Yu Chang ,  Kuo-Ching Chiang

Inventor： Chi-Wen Liu ,  Ching-Yu Chang ,  Kuo-Ching Chiang

IPC: H04M1/253 ,  H04L29/06 ,  H04M1/72502 ,  H04W88/06 ,  H04W4/80 ,  G10L13/00 ,  H04M1/724 ,  H04W84/12 ,  G10L15/26

Abstract: A portable device can transmit information through one of a mobile phone network and an Internet, wherein the portable device includes a text-based communication module to allow a user may synchronously transmit or receive data through a local area network, wherein the data is text, audio, video or the combination thereof. The text-based communication module of the portable device includes a text-to-speech recognition module used to convert a text data for outputting the text data by vocal, and a read determination module for determining read target terminals and unread target terminals when a user of the portable phone device activates the read determination module.

公开(公告)号：US20160013041A1

公开(公告)日：2016-01-14

申请号：US14724107

申请日：2015-05-28

Applicant: Chen-Yu Liu ,  Ching-Yu Chang

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0212 ,  C08F220/18 ,  C08F220/22 ,  C11D11/0047 ,  G03F7/11 ,  G03F7/40 ,  G03F7/425 ,  H01L21/02359 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31133

Abstract: A system and method for middle layers is provided. In an embodiment the middle layer comprises a floating component in order to form a floating region along a top surface of the middle layer after the middle layer has dispersed. The floating component may be a polymer with a floating group incorporated into the polymer. The floating group may comprise a fluorine atom.

Abstract translation: 提供了中间层的系统和方法。 在一个实施例中，中间层包括浮动部件，以在中间层分散之后沿着中间层的顶表面形成浮动区域。 浮动组分可以是掺入聚合物中的具有漂浮基团的聚合物。 漂浮基团可以包含氟原子。

公开(公告)号：US08841058B2

公开(公告)日：2014-09-23

申请号：US12913191

申请日：2010-10-27

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/2041

Abstract: A photolithography material is provided. The photolithography material is a surface modifying material. The photolithography material includes a polymer (e.g., fluorine polymer) that includes less than approximately 80% hydroxyl groups. In an embodiment, the photolithography material includes less than approximately 80% fluoro-alcohol functional units. Methods of using the photolithography material include as an additive to a photoresist or topcoat layer. The photolithography material may be used in an immersion lithography process.

Abstract translation: 提供光刻材料。 光刻材料是表面改性材料。 光刻材料包括包含小于约80％羟基的聚合物（例如氟聚合物）。 在一个实施例中，光刻材料包括少于约80％的氟 - 醇官能单元。 使用光刻材料的方法包括作为光致抗蚀剂或顶涂层的添加剂。 光刻材料可以用于浸没式光刻工艺。

公开(公告)号：US08753797B2

公开(公告)日：2014-06-17

申请号：US13543582

申请日：2012-07-06

Applicant: Fang Lin ,  Ching-Yu Chang

Inventor： Fang Lin ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/09 ,  G03F7/0046

Abstract: Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.

Abstract translation: 描述制造半导体器件的方法和材料。 该方法包括提供衬底，在衬底上形成包含含氟材料的表面改性中间层（SM-ML），在SM-ML上形成光致抗蚀剂层，将光致抗蚀剂层暴露于曝光能量;以及 显影光致抗蚀剂层。

公开(公告)号：US20140017615A1

公开(公告)日：2014-01-16

申请号：US13546125

申请日：2012-07-11

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: B05C13/02 ,  G03F7/20

CPC classification number: G03F7/162

Abstract: An apparatus includes a chuck, a first drain cup and second drain cup with two separately drain lines connected to each drain cup. The second drain cup is integrated with the first drain cup and located on top of the first drain cup. The different based chemical wastes can be collected into the separated drain cups and furthermore into the different drain lines and waste tanks. Accordingly, different based photo resists and developers can be used at the same apparatus by adjusting the chuck position to save the coating and develop tool and clean room space and furthermore the production cost.

Abstract translation: 一种装置包括卡盘，第一排水杯和第二排水杯，其具有连接到每个排水杯的两个单独的排水管线。 第二排水杯与第一排水杯集成，并位于第一排水杯的顶部。 不同的基础化学废物可以被收集到分离的排水杯中并进一步收集到不同的排水管线和废液箱中。 因此，通过调整卡盘位置，可以在相同的装置上使用不同的基于光刻胶和显影剂，以保存涂层，并开发工具和清洁的房间空间以及生产成本。

公开(公告)号：US20130323641A1

公开(公告)日：2013-12-05

申请号：US13486697

申请日：2012-06-01

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/004 ,  H01L21/02

CPC classification number: G03F7/16 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11

Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

Abstract translation: 感光材料和形成图案的方法，其包括提供可操作以漂浮到由感光材料形成的层的顶部区域的感光材料的组分的组合物。 在一个实例中，感光层包括具有氟原子的第一组分（例如，氟烷基）。 在形成感光层之后，第一部件漂浮到感光层的顶表面。 此后，对感光层进行图案化。

公开(公告)号：US08597870B2

公开(公告)日：2013-12-03

申请号：US13525796

申请日：2012-06-18

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/11

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: A coating material for use during a lithography process. In an example, a coating material disposed on a material layer includes a polymer and a quencher catcher chemically bonded to the polymer. The quencher catcher substantially neutralizes any quencher that diffuses into the coating material from the material layer.

Abstract translation: 在光刻工艺中使用的涂料。 在一个实例中，设置在材料层上的涂层材料包括聚合物和化学键合到聚合物上的淬火剂捕集器。 淬火捕集器基本上中和从材料层扩散到涂层材料中的任何猝灭剂。

公开(公告)号：US08586290B2

公开(公告)日：2013-11-19

申请号：US12622230

申请日：2009-11-19

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

Abstract: A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.

Abstract translation: 光刻方法包括在基板上形成感光层，曝光感光层，烘烤感光层，以及显影曝光的感光层。 感光层包括响应于与酸的反应而变成可溶于碱溶液的聚合物，响应于辐射能而分解形成酸的多个光酸发生剂（PAG），和多个具有沸点分布的猝灭剂 约200℃至约350℃。猝灭剂还具有分布在300道尔顿和约20000道尔顿之间的分子量，并且垂直分布在感光层中，使得感光层顶部的第一浓度C1大于 在感光层的底部具有第二浓度C2。