Abstract:
A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameter, and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2N−1 bits, where N is equal to or greater than 7, while the second calibration sequence utilizes short calibration patterns, such as fixed codes less than 16 bytes, and for example as short as 2 bytes long.
Abstract:
A memory module having memory components, a termination structure, an address/control signal path, a clock signal path, multiple data signal paths and multiple strobe signal paths. The strobe signal paths and data signal paths are coupled to respective memory components, and the address/control signal path and clock signal path are coupled in common to all the memory components. The address/control signal path extends along the memory components to the termination structure such that control signals propagating toward the termination structure arrive at address/control inputs of respective memory components at progressively later times corresponding to relative positions of the memory components.
Abstract:
A method of refreshing a memory is disclosed. The method includes accessing from active memory an active memory map. The active memory map is generated by software and identifies addresses corresponding to the active memory and associated refresh criteria for the addresses. The refresh criteria are evaluated for a portion of the active memory, and an operation initiated to refresh a portion of the active memory is based on the refresh criteria.
Abstract:
Components of a memory system, such as a memory controller and a memory device, that reduce delay in exiting self-refresh mode by controlling the refresh timing of the memory device. The memory device includes a memory core. An interface circuit of the memory device receives an external refresh signal indicating an intermittent refresh event. A refresh circuit of the memory device generates an internal refresh signal indicating an internal refresh event of the memory device. A refresh control circuit of the memory device performs a refresh operation on a portion of the memory core responsive to the internal refresh event, at a time relative to the intermittent refresh event indicated by the external refresh signal.
Abstract:
Described are memory apparatus organized in physical banks and including configurable data control circuit to support multiple data-width configurations. Relatively narrow width configurations load fewer sense amplifiers, resulting in reduced power usage for relatively narrow memory configurations. Also described are memory controllers that convey configuration value to configurable memory apparatus and support point-to-point data buffers for multiple width configurations.
Abstract:
In memory module populated by memory components having a write-timing calibration mode, control information that specifies a write operation is received via an address/control signal path and write data corresponding to the write operation is received via a data signal path. Each memory component receives multiple delayed versions of a timing signal used to indicate that the write data is valid, and outputs signals corresponding to the multiple delayed versions of the timing signal to enable determination, in a memory controller, of a delay interval between outputting the control information on the address/control signal path and outputting the write data on the data signal path.
Abstract:
First data is read out of a core storage array of a memory component over a first time interval constrained by data output bandwidth of the core storage array. After read out from the core storage array, the first data is output from the memory component over a second time interval that is shorter than the first time interval and that corresponds to a data transfer bandwidth greater than the data output bandwidth of the core storage array.
Abstract:
A memory component includes a memory bank comprising a plurality of storage cells and a data interface block configured to transfer data between the memory component and a component external to the memory component. The memory component further includes a plurality of column interface buses coupled between the memory bank and the data interface block, wherein a first column interface bus of the plurality of column interface buses is configured to transfer data between a first storage cell of the plurality of storage cells and the data interface block during a first access operation and wherein a second column interface bus of the plurality of column interface buses is configured to transfer the data between the first storage cell and the data interface block during a second access operation.
Abstract:
A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.
Abstract:
The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.