公开(公告)号：US08530263B2

公开(公告)日：2013-09-10

申请号：US13207058

申请日：2011-08-10

Applicant: Wen-Chin Lee ,  Wen-Tsai Yen ,  Liang-Sheng Yu ,  Yung Sheng Chiu

Inventor： Wen-Chin Lee ,  Wen-Tsai Yen ,  Liang-Sheng Yu ,  Yung Sheng Chiu

IPC: H01L21/00 ,  H01L31/00

CPC classification number: H01L31/1864 ,  H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/50

Abstract: A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.

Abstract translation: 制造太阳能电池的方法包括在衬底上形成前接触层，并且前接触层在特定波长处是光学透明的并且是导电的。 通过前接触层划刻第一划线区域以暴露基板的一部分。 掺杂有n型掺杂剂的缓冲层形成在前接触层和第一划线区上。 在缓冲层上形成掺杂有p型掺杂剂的吸收层。 在吸收层上形成导电的背接触层。

公开(公告)号：US20130118569A1

公开(公告)日：2013-05-16

申请号：US13295148

申请日：2011-11-14

Applicant: Wen-Chin Lee ,  Liang-Sheng Yu ,  Wen-Tsai Yen ,  Yung-Sheng Chiu

Inventor： Wen-Chin Lee ,  Liang-Sheng Yu ,  Wen-Tsai Yen ,  Yung-Sheng Chiu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/0463 ,  Y02E10/541 ,  Y02P70/521

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, a light absorbing semiconductor layer, and top electrode layer. The absorber layer includes a p-type interior region and an n-type exterior region formed around the perimeter of the layer from a modified native portion of the p-type interior region, thereby forming an active n-p junction that is an intrinsic part of the absorber layer. The top electrode layer is electrically connected to the bottom electrode layer via a scribe line formed in the absorber layer that defines sidewalls. The n-type exterior region of the absorber layer extends along both the horizontal top of the absorber layer, and onto the vertical sidewalls of the scribe line to increase the area of available n-p junction in the solar cell thereby improving solar conversion efficiency.

Abstract translation: 薄膜太阳能电池及其形成方法。 太阳能电池包括底部电极层，光吸收半导体层和顶部电极层。 吸收层包括p型内部区域和从p型内部区域的修饰的天然部分围绕该层的周边形成的n型外部区域，从而形成作为p型内部区域的固有部分的活性np结， 吸收层。 顶部电极层通过形成在限定侧壁的吸收体层中的划痕线电连接到底部电极层。 吸收层的n型外部区域沿着吸收层的水平顶部延伸，并且延伸到划线的垂直侧壁上，以增加太阳能电池中可用的n-p结的面积，从而提高太阳能转换效率。

公开(公告)号：US08440158B2

公开(公告)日：2013-05-14

申请号：US12195844

申请日：2008-08-21

Applicant: Cheng-Hsien Lin ,  Yao-Wen Bai ,  Rui Zhang ,  Wen-Chin Lee

Inventor： Cheng-Hsien Lin ,  Yao-Wen Bai ,  Rui Zhang ,  Wen-Chin Lee

IPC: D01F9/12 ,  H01B1/04 ,  H05K3/00

CPC classification number: H05K3/424 ,  B82Y10/00 ,  C23C18/1204 ,  C23C18/127 ,  C23C18/1287 ,  H05K3/427 ,  H05K2201/026 ,  H05K2201/0323

Abstract: A pre-plating solution for making a printed circuit board includes carbon nanotubes of 0.01-3 wt %, a surfactant of 0.01-4 wt %, an alkaline substance of 0.01-1 wt % and a solvent. A method for preparing a pre-plating solution comprising the steps of: providing a plurality of carbon nanotubes; purifying the carbon nanotubes; treating the purified carbon nanotubes with an acid; mixing the treated carbon nanotubes, an alkaline substance and a solvent to form suspension; and adding surfactant into suspension.

Abstract translation: 用于制造印刷电路板的预镀溶液包括0.01-3重量％的碳纳米管，0.01-4重量％的表面活性剂，0.01-1重量％的碱性物质和溶剂。 一种制备预镀液的方法，包括以下步骤：提供多个碳纳米管; 纯化碳纳米管; 用酸处理纯化的碳纳米管; 混合处理的碳纳米管，碱性物质和溶剂以形成悬浮液; 并将表面活性剂加入悬浮液中。

公开(公告)号：US20130075247A1

公开(公告)日：2013-03-28

申请号：US13239989

申请日：2011-09-22

Applicant: Wen-Chin Lee ,  Wen-Tsai Yen ,  Yung-Sheng Chiu ,  Ying Chen Chao

Inventor： Wen-Chin Lee ,  Wen-Tsai Yen ,  Yung-Sheng Chiu ,  Ying Chen Chao

IPC: C23C14/34

CPC classification number: C23C14/06 ,  C23C14/0047 ,  C23C14/0057 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/1836 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method and system for forming a chalcogenide or chalcopyrite-based semiconductor material provide for the simultaneous deposition of metal precursor materials from a target and Se radials from a Se radical generation system. The Se radical generation system includes an evaporator that produces an Se vapor and a plasma chamber that uses a plasma to generate a flux of Se radicals. Multiple such deposition operations may take place in sequence, each having the deposition temperature accurately controlled. The deposited material may include a compositional concentration gradient or may be a composite material, and may be used as an absorber layer in a solar cell.

Abstract translation: 用于形成硫族化物或黄铜矿基半导体材料的方法和系统提供了来自Se自由基产生系统的来自目标的金属前体材料和Se径向的同时沉积。 Se自由基生成系统包括产生Se蒸气的蒸发器和使用等离子体产生Se自由基流量的等离子体室。 可以依次进行多个这样的沉积操作，每个沉积操作具有精确控制的沉积温度。 沉积材料可以包括组成浓度梯度或者可以是复合材料，并且可以用作太阳能电池中的吸收层。

公开(公告)号：US08304841B2

公开(公告)日：2012-11-06

申请号：US12761918

申请日：2010-04-16

Applicant: Jeff J. Xu ,  Cheng-Tung Lin ,  Hsiang-Yi Wang ,  Wen-Chin Lee ,  Betty Hsieh

Inventor： Jeff J. Xu ,  Cheng-Tung Lin ,  Hsiang-Yi Wang ,  Wen-Chin Lee ,  Betty Hsieh

IPC: H01L21/02

CPC classification number: H01L27/092 ,  H01L21/823835 ,  H01L21/823842

Abstract: A gate-last method for forming a metal gate transistor is provided. The method includes forming an opening within a dielectric material over a substrate. A gate dielectric structure is formed within the opening and over the substrate. A work function metallic layer is formed within the opening and over the gate dielectric structure. A silicide structure is formed over the work function metallic layer.

Abstract translation: 提供了用于形成金属栅极晶体管的最后一种方法。 该方法包括在基底上形成电介质材料内的开口。 栅极电介质结构形成在开口内和衬底上。 工作功能金属层形成在开口内和栅介质结构之上。 在功函数金属层上形成硅化物结构。

公开(公告)号：US08211267B2

公开(公告)日：2012-07-03

申请号：US12156818

申请日：2008-06-05

Applicant: Cheng-Hsien Lin ,  Yao-Wen Bai ,  Wen-Chin Lee ,  Rui Zhang ,  Kai-Li Jiang ,  Chen Feng

Inventor： Cheng-Hsien Lin ,  Yao-Wen Bai ,  Wen-Chin Lee ,  Rui Zhang ,  Kai-Li Jiang ,  Chen Feng

IPC: B32B5/08 ,  B32B5/12 ,  B32B5/18

CPC classification number: H05K9/009 ,  B29C70/882 ,  B29C70/885 ,  B29K2105/167 ,  C08L2666/76 ,  H05K9/0083 ,  H05K9/0088 ,  Y10S977/784 ,  Y10S977/789 ,  Y10T428/24132 ,  Y10T428/249979

Abstract: An electromagnetic shielding composite includes a polymer and a plurality of carbon nanotubes disposed in the polymer in a form of carbon nanotube film structure. A method for making an electromagnetic shielding composite includes the steps of: (a) providing an array of carbon nanotubes; (b) drawing a carbon nanotube film from the array of carbon nanotubes; (c) providing a substrate, covering at least one carbon nanotube film on the substrate to form a carbon nanotube film structure; and (d) providing a polymer and combining the carbon nanotube film structure with the polymer to form an electromagnetic shielding composite.

Abstract translation: 电磁屏蔽复合材料包括以碳纳米管膜结构形式设置在聚合物中的聚合物和多个碳纳米管。 制造电磁屏蔽复合材料的方法包括以下步骤：（a）提供碳纳米管阵列; （b）从碳纳米管阵列中抽出碳纳米管膜; （c）提供衬底，在衬底上覆盖至少一个碳纳米管膜以形成碳纳米管膜结构; 和（d）提供聚合物并将碳纳米管膜结构与聚合物结合以形成电磁屏蔽复合材料。

公开(公告)号：US08089003B2

公开(公告)日：2012-01-03

申请号：US12057654

申请日：2008-03-28

Applicant: Wen-Chin Lee ,  Cheng-Hsien Lin

Inventor： Wen-Chin Lee ,  Cheng-Hsien Lin

IPC: H05K1/02

CPC classification number: H05K1/056 ,  H05K1/0393 ,  H05K2201/0355 ,  H05K2201/0382

Abstract: A printed circuit board substrate includes an insulation matrix and a waterproof layer. The insulation matrix includes a first surface and a second surface at an opposite side thereof to the first surface. The waterproof layer is formed in the insulation matrix and is arranged between the first surface and the second surface for blocking water from passing therethrough in a thicknesswise direction of the insulation matrix.

Abstract translation: 印刷电路板基板包括绝缘基体和防水层。 绝缘矩阵包括与第一表面相对的第一表面和第二表面。 防水层形成在绝缘基体中，并且布置在第一表面和第二表面之间，用于阻挡水在绝缘基体的厚度方向上穿过其中。

公开(公告)号：US08062946B2

公开(公告)日：2011-11-22

申请号：US11093847

申请日：2005-03-30

Applicant: Yee-Chia Yeo ,  Chun-Chieh Lin ,  Wen-Chin Lee ,  Chenming Hu

Inventor： Yee-Chia Yeo ,  Chun-Chieh Lin ,  Wen-Chin Lee ,  Chenming Hu

IPC: H01L21/336

CPC classification number: H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/165 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7842 ,  H01L29/7848

Abstract: A strained-channel transistor structure with lattice-mismatched zone and fabrication method thereof. The transistor structure includes a substrate having a strained channel region, comprising a first semiconductor material with a first natural lattice constant, in a surface, a gate dielectric layer overlying the strained channel region, a gate electrode overlying the gate dielectric layer, and a source region and drain region oppositely adjacent to the strained channel region, with one or both of the source region and drain region comprising a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant different from the first natural lattice constant.

Abstract translation: 具有晶格失配区的应变通道晶体管结构及其制造方法。 晶体管结构包括具有应变沟道区的衬底，包括表面上具有第一自然晶格常数的第一半导体材料，覆盖在应变沟道区上的栅极电介质层，覆盖栅极电介质层的栅电极和源极 区域和漏极区域相邻地邻近应变通道区域，其中源区域和漏极区域中的一个或两个包括晶格失配区域，其包含具有不同于第一自然晶格常数的第二自然晶格常数的第二半导体材料。

公开(公告)号：US07834345B2

公开(公告)日：2010-11-16

申请号：US12205585

申请日：2008-09-05

Applicant: Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

Inventor： Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

IPC: H01L29/94

CPC classification number: H01L29/7391 ,  H01L21/26586

Abstract: A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure.

Abstract translation: 半导体器件包括沟道区; 沟道区上的栅极电介质; 位于栅极电介质上的栅电极; 以及与栅极电介质相邻的第一源极/漏极区域。 第一源极/漏极区域是第一导电类型。 沟道区域和第一源极/漏极区域中的至少一个包括超晶格结构。 所述半导体器件还包括与所述第一源极/漏极区域相比在所述沟道区域的相对侧上的第二源极/漏极区域。 第二源极/漏极区域是与第一导电类型相反的第二导电类型。 最多，第一源极/漏极区域和第二源极/漏极区域中的一个包括附加的超晶格结构。

公开(公告)号：US07758716B2

公开(公告)日：2010-07-20

申请号：US11610642

申请日：2006-12-14

Applicant: Wen-Chin Lee ,  Cheng-Hsien Lin

Inventor： Wen-Chin Lee ,  Cheng-Hsien Lin

IPC: C23F1/00

CPC classification number: H05K3/068 ,  B05B1/205 ,  H05K2203/075 ,  Y10S134/902

Abstract: An apparatus (100) for spraying an etchant solution on a preformed printed circuit board (30) includes a number of feed pipes (40) for supplying the etchant solution and a number of nozzles (45) mounted on the feed pipes. Each of the feed pipes has a middle portion (402) and two end portions (401). The middle portions of the feed pipes are located on a first plane and the end portions of the feed pipes are located on a second plane parallel to the first plane. The number of nozzles are mounted on the middle portion and the two end portions of each feed pipe. The number of nozzles are in fluid communication with the feed pipes.

Abstract translation: 用于在预成型印刷电路板（30）上喷涂蚀刻剂溶液的设备（100）包括用于供应蚀刻剂溶液的多个供给管（40）和安装在进料管上的多个喷嘴（45）。 每个进料管具有中间部分（402）和两个端部（401）。 进料管的中间部分位于第一平面上，并且进料管的端部位于平行于第一平面的第二平面上。 喷嘴的数量安装在每个进料管的中间部分和两个端部。 喷嘴的数量与进料管流体连通。