公开(公告)号：US07115517B2

公开(公告)日：2006-10-03

申请号：US10674700

申请日：2003-09-29

申请人： Yan Ye ,  Xiaoye Zhao ,  Hong Du

发明人： Yan Ye ,  Xiaoye Zhao ,  Hong Du

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/76808 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/7684

摘要： A method of fabricating an interconnect structure (e.g., dual damascene interconnect structure, and the like) of an integrated circuit device is disclosed. The interconnect structure is fabricated using a bi-layer mask comprising an imaging film and an organic planarizing film. The bi-layer mask is used to remove lithographic misalignment between a contact hole, a trench, and an underlying conductive line when the interconnect structure is formed. Additionally, a sacrificial layer may be used to protect an inter-metal dielectric (IMD) layer during subsequent planarization of the interconnect structure. The sacrificial layer may be formed of amorphous silicon (Si), titanium nitride (TiN), tungsten (W), and the like. The interconnect structure may be formed of a metal (e.g., copper (Cu), aluminum (Al), tantalum (Ti), tungsten (W), titanium (Ti), and the like) or a conductive compound (e.g., tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), and the like).

摘要翻译： 公开了一种制造集成电路器件的互连结构（例如双镶嵌互连结构等）的方法。 使用包括成像膜和有机平坦化膜的双层掩模制造互连结构。 当形成互连结构时，双层掩模用于去除接触孔，沟槽和下面的导电线之间的光刻未对准。 此外，牺牲层可以用于在互连结构的随后的平坦化期间保护金属间电介质（IMD）层。 牺牲层可以由非晶硅（Si），氮化钛（TiN），钨（W）等形成。 互连结构可以由金属（例如铜（Cu），铝（Al），钽（Ti），钨（W），钛（Ti）等）或导电化合物（例如，氮化钽 （TaN），氮化钛（TiN），氮化钨（WN）等）。

公开(公告)号：US20060216926A1

公开(公告)日：2006-09-28

申请号：US11423613

申请日：2006-06-12

申请人： Yan Ye ,  Xiaoye Zhao ,  Hong Du

发明人： Yan Ye ,  Xiaoye Zhao ,  Hong Du

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/7684

摘要： A method of fabricating an interconnect structure (e.g., dual damascene interconnect structure, and the like) of an integrated circuit device is disclosed. The interconnect structure is fabricated using a bi-layer mask comprising an imaging film and an organic planarizing film. The bi-layer mask is used to remove lithographic misalignment between a contact hole, a trench, and an underlying conductive line when the interconnect structure is formed. Additionally, a sacrificial layer may be used to protect an inter-metal dielectric (IMD) layer during subsequent planarization of the interconnect structure. The sacrificial layer may be formed of amorphous silicon (Si), titanium nitride (TiN), tungsten (W), and the like. The interconnect structure may be formed of a metal (e.g., copper (Cu), aluminum (Al), tantalum (Ti), tungsten (W), titanium (Ti), and the like) or a conductive compound (e.g., tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), and the like).

摘要翻译： 公开了一种制造集成电路器件的互连结构（例如双镶嵌互连结构等）的方法。 使用包括成像膜和有机平坦化膜的双层掩模制造互连结构。 当形成互连结构时，双层掩模用于去除接触孔，沟槽和下面的导电线之间的光刻未对准。 此外，牺牲层可以用于在互连结构的随后的平坦化期间保护金属间电介质（IMD）层。 牺牲层可以由非晶硅（Si），氮化钛（TiN），钨（W）等形成。 互连结构可以由金属（例如铜（Cu），铝（Al），钽（Ti），钨（W），钛（Ti）等）或导电化合物（例如，氮化钽 （TaN），氮化钛（TiN），氮化钨（WN）等）。

公开(公告)号：US07094316B1

公开(公告)日：2006-08-22

申请号：US09638075

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

发明人： Hiroji Hanawa ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka ,  Yan Ye

IPC分类号： C23C16/00 ,  C23F1/02

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively, coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.

摘要翻译： 一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的工件支撑件面向所述外壳的上部，所述外壳具有穿过所述工件支撑件的大致相对侧的至少第一和第二开口。 至少一个中空管道连接到第一和第二开口。 通过导管提供封闭的环形路径，并且在第一和第二开口之间跨越晶片表面延伸。 工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。 线圈天线​​耦合到RF电源并且感应地耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

公开(公告)号：US20060172542A1

公开(公告)日：2006-08-03

申请号：US11046135

申请日：2005-01-28

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

IPC分类号： H01L21/302 ,  C23F1/00 ,  H01L21/461

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.

摘要翻译： 本发明的实施例一般涉及在等离子体处理室中的处理区域内限制等离子体的方法和装置。 该装置可以包括环形环，其具有在室壁之间的间隔距离在约0.8英寸至约1.5英寸之间。 除了环形等离子体限制环之外，等离子体还可以通过在等离子体处理期间通过降低施加到顶部电极的电压比例的电压来提供约束，并且在衬底支撑件处以负相位提供提供给顶部电极的剩余电压， 如果衬底在加工过程中存在的话。 可以通过改变衬底支撑件和围绕顶部电极的电介质密封件的阻抗来调节电压比。 通过电压比降低顶部电极电压并且在衬底支架处以负相位提供提供给顶部电极的剩余电压减少了被吸引到接地室壁的等离子体的量，从而改善了等离子体约束。 这种等离子体约束的方法被称为阻抗限制。 通过使用所描述的环形环，阻抗约束方案或两者的组合可以改善等离子体约束。

公开(公告)号：US20060157201A1

公开(公告)日：2006-07-20

申请号：US11360944

申请日：2006-02-23

申请人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

发明人： Daniel Hoffman ,  Matthew Miller ,  Jang Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

IPC分类号： C23F1/00

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

公开(公告)号：US20060102197A1

公开(公告)日：2006-05-18

申请号：US10989678

申请日：2004-11-16

申请人： Kang-Lie Chiang ,  Man-Ping Cai ,  Shawming Ma ,  Yan Ye ,  Peter Hsieh

发明人： Kang-Lie Chiang ,  Man-Ping Cai ,  Shawming Ma ,  Yan Ye ,  Peter Hsieh

IPC分类号： B08B6/00 ,  B08B5/04

CPC分类号： C23F4/00 ,  B08B7/00 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/76814

摘要： A method for removing residue from a layer of conductive material on a substrate is provided herein. In one embodiment, the method includes introducing a process gas into a vacuum chamber having a substrate surface with residue from exposure to a fluorine-containing environment. The process gas includes a hydrogen-containing gas. Optionally, the process gas may further include an oxygen-containing or a nitrogen containing gas. A plasma of the process gas is thereafter maintained in the vacuum chamber for a predetermined period of time to remove the residue from the surface. The temperature of the substrate is maintained at a temperature between about 10 degrees Celsius and about 90 degrees Celsius during the plasma step.

摘要翻译： 本文提供了用于从基底上的导电材料层除去残余物的方法。 在一个实施方案中，该方法包括将工艺气体引入真空室，该真空室具有残留物暴露于含氟环境的基底表面。 工艺气体包括含氢气体。 任选地，工艺气体还可以包括含氧气体或含氮气体。 然后将该工艺气体的等离子体在真空室中保持预定的时间以从表面除去残余物。 在等离子体步骤期间，基板的温度保持在约10摄氏度和约90摄氏度之间的温度。

公开(公告)号：US20050266691A1

公开(公告)日：2005-12-01

申请号：US11126053

申请日：2005-05-09

申请人： Binxi Gu ,  Gerardo Delgadino ,  Yan Ye ,  Mike Chen

发明人： Binxi Gu ,  Gerardo Delgadino ,  Yan Ye ,  Mike Chen

IPC分类号： B44C1/22 ,  H01L21/027 ,  H01L21/302 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76829

摘要： Certain embodiments include an etching method including providing an etch material, applying a gas mixture including hydrogen, forming a plasma, and etching the etch material. The etch material can include a low-k dielectric material. The gas mixture can include a hydrogen gas, a hydrogen-free fluorocarbon, and a nitrogen gas, and further include one or more of a hydrofluorocarbon gas, an inert gas, and/or a carbon monoxide gas. The hydrogen gas can be a diatomic hydrogen, a hydrocarbon, a silane and/or a fluorine-free hydrogen gas, including H2, CH4, C2H4, NH3, and/or H2O gases. The hydrogen-free fluorocarbon gas can be a CxFy gas (where x≧1 and Y≧1) and the hydrofluorocarbon gas can be a CxHyFz gas (where x≧1, y≧1 and z≧1). The gas mixture can be free of oxygen. Embodiments can include reduced pressures, reduced hydrogen flow rates and one or more plasma frequencies.

摘要翻译： 某些实施例包括蚀刻方法，包括提供蚀刻材料，施加包括氢气的气体混合物，形成等离子体，以及蚀刻蚀刻材料。 蚀刻材料可以包括低k电介质材料。 气体混合物可以包括氢气，无氢碳氟化合物和氮气，并且还包括氢氟烃气体，惰性气体和/或一氧化碳气体中的一种或多种。 氢气可以是双原子氢，烃，硅烷和/或无氟氢气，包括H 2，CH 4，C 2 H 4，NH 3和/或H 2 O 2气体。 无氢碳氟化合物气体可以是气体（其中x> = 1且Y> = 1），并且氢氟烃气体可以是C _{= 1，y> = 1，z> = 1）。 气体混合物可以没有氧气。 实施例可以包括减压，降低氢气流速和一个或多个等离子体频率。}

公开(公告)号：US20050236377A1

公开(公告)日：2005-10-27

申请号：US11105307

申请日：2005-04-12

申请人： Daniel Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas Buchberger ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert Hagen ,  Matthew Miller

发明人： Daniel Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas Buchberger ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert Hagen ,  Matthew Miller

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B23K9/00

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

公开(公告)号：US06939808B2

公开(公告)日：2005-09-06

申请号：US10211453

申请日：2002-08-02

申请人： Eugene Tzou ,  Jie Yuan ,  Yan Ye

发明人： Eugene Tzou ,  Jie Yuan ,  Yan Ye

IPC分类号： H01L21/033 ,  H01L21/314 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0332 ,  H01L21/3146 ,  H01L21/32139

摘要： A method for etching a metal layer formed on a substrate to form a metal line, using an amorphous carbon layer as a pattern mask. One embodiment of the method of the invention etches a metal layer formed on a substrate, for forming a metal line, by depositing an amorphous carbon layer on the metal layer, patterning the amorphous carbon layer to provide a pattern mask on the metal layer, thus exposing portions of said metal layer; and etching the exposed portions of the metal layer, to form a metal line. In an embodiment, the metal layer comprises a copper layer.

摘要翻译： 一种使用无定形碳层作为图案掩模蚀刻形成在基板上以形成金属线的金属层的方法。 本发明方法的一个实施方案是通过在金属层上沉积无定形碳层来蚀刻形成在基底上的金属层，以形成金属线，图案化无定形碳层以在金属层上提供图案掩模，从而 暴露所述金属层的部分; 并蚀刻金属层的暴露部分，形成金属线。 在一个实施例中，金属层包括铜层。

公开(公告)号：US06939434B2

公开(公告)日：2005-09-06

申请号：US10164327

申请日：2002-06-05

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Yan Ye ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Michael S. Barnes ,  Huong Thanh Nguyen

IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.

摘要翻译： 描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。 所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。 反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流， 跨越所述处理区域。 磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。