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    Navigation grade micromachined rotation sensor system
    142.
    发明授权
    Navigation grade micromachined rotation sensor system 失效
    导航级微加工旋转传感器系统

    公开(公告)号：US5987986A

    公开(公告)日：1999-11-23

    申请号：US903499

    申请日：1997-07-30

    Applicant: Stanley F. Wyse ,  Robert E. Stewart ,  Samuel H. Fersht

    Inventor： Stanley F. Wyse ,  Robert E. Stewart ,  Samuel H. Fersht

    IPC: G01C19/56 ,  G01P9/04

    CPC classification number: G01C19/5719 ,  G01P2015/084 ,  G01P2015/0842

    Abstract: An angular rate sensor provides a digital delta theta output signal. A drive member is formed of a single, silicon wafer having a pair of oppositely-facing planar surfaces. The drive member includes a frame and a drive member central portion connected to the frame and arranged to have rotational compliance between the frame and the central portion about an axis perpendicular to the planar surfaces of the silicon wafer. Drive signals are applied to a plurality of electrodes on the central portion to cause rotational oscillation of the drive member central portion about a drive axis perpendicular to the planar surfaces of the silicon wafer. A silicon sensing member is connected to the drive member. The sensing member has a central support member connected to the drive member central portion such that rotational oscillations of the drive member central portion are transmitted to the sensing member central portion. A sensing portion is connected to the sensing member central support member to allow the sensing portion to oscillate about the drive axis and to allow an input rotation rate about an axis perpendicular to the drive axis to produce out-of-plane oscillations of the sensing portions. Signal processing apparatus is connected to the sensing portion for producing a signal indicative of the input rotational rate as a function of the amplitude of the out-of-plane oscillations of the sensing portion.

    Abstract translation: 角速率传感器提供数字deltaθ输出信号。 驱动构件由具有一对相对的平面的单个硅晶片形成。 驱动构件包括框架和连接到框架的驱动构件中心部分，并且布置成围绕垂直于硅晶片的平面的轴线具有框架和中心部分之间的旋转顺应性。 驱动信号被施加到中心部分上的多个电极，以使得驱动构件中心部分围绕垂直于硅晶片平面的驱动轴的旋转振荡。 硅感测构件连接到驱动构件。 感测构件具有连接到驱动构件中心部分的中心支撑构件，使得驱动构件中心部分的旋转振动被传递到感测构件中心部分。 感测部分连接到感测构件中心支撑构件，以允许感测部分围绕驱动轴线振荡并且允许围绕垂直于驱动轴线的轴的输入旋转速率产生感测部分的平面外振荡 。 信号处理装置连接到感测部分，用于产生表示作为感测部分的平面外振荡幅度的函数的输入转速的信号。

    Three-dimensional acceleration sensor and airbag using the same
    144.
    发明授权
    Three-dimensional acceleration sensor and airbag using the same 失效
    三维加速度传感器和气囊使用相同

    公开(公告)号：US5441300A

    公开(公告)日：1995-08-15

    申请号：US978397

    申请日：1992-11-18

    Applicant: Yoshihiro Yokota ,  Akira Koide ,  Masahiro Matsumoto ,  Masahide Hayashi

    Inventor： Yoshihiro Yokota ,  Akira Koide ,  Masahiro Matsumoto ,  Masahide Hayashi

    IPC: B60R21/0136 ,  B60R21/16 ,  B81B3/00 ,  G01P15/125 ,  G01P15/18 ,  B60R21/32

    CPC classification number: G01P15/18 ,  G01P15/125 ,  G01P2015/0828 ,  G01P2015/084 ,  G01P2015/0842

    Abstract: A three-dimensional acceleration sensor capable of detecting a small acceleration value and even an acceleration value amounting up to 100G occurring in the event of a collision comprises a diaphragm for linking a frame and a massive part and diaphragms and beams for linking the massive part and a central part. These elements are formed by working a single crystalline silicon plate. Gaps between the massive part and opposing electrodes are changed by acceleration applied to the massive part. A circuit connected to terminals detects the changes in gaps as changes in capacitances and determines direction and level of the applied acceleration.

    Abstract translation: 能够检测碰撞时发生的加速度小，加速度高达100G的三维加速度传感器包括用于连接框架和块状部件的隔膜以及用于连接块状部件的隔膜和梁 中心部分。 这些元件通过加工单晶硅板形成。 大块部件和相对电极之间的间隙由施加在大块部件上的加速度而改变。 连接到端子的电路检测间隙的变化，作为电容的变化，并确定施加的加速度的方向和水平。

    Resonant-bridge two axis microaccelerometer
    145.
    发明授权
    Resonant-bridge two axis microaccelerometer 失效
    谐振桥两轴微加速度计

    公开(公告)号：US4901570A

    公开(公告)日：1990-02-20

    申请号：US304057

    申请日：1989-01-30

    Applicant: Shih-Chia Chang ,  David B. Hicks ,  Michael W. Putty

    Inventor： Shih-Chia Chang ,  David B. Hicks ,  Michael W. Putty

    IPC: G01P15/02 ,  G01P15/097 ,  G01P15/10 ,  G01P15/18

    CPC classification number: G01P15/18 ,  G01P15/097 ,  G01P2015/084 ,  G01P2015/0842 ,  Y10S73/01

    Abstract: A resonant bridge two-axis microaccelerometer is disclosed comprising polysilicon resonant bridges orthogonally attached to a silicon proof mass, such that the silicon proof mass is suspended by the resonant bridges. Acceleration in the plane of the substrate causes differential axial loads on the opposing microbridges in each pair, thereby shifting their resonant frequencies. The acceleration component aligned with a pair is measured by the difference in resonant frequencies.

    Abstract translation: 公开了一种谐振桥式双轴微加速度计，其包括正交地连接到防硅质量块的多晶硅谐振桥，使得防硅质量块被谐振桥悬挂。 衬底平面上的加速度导致每对中相对的微桥上的不同轴向载荷，从而使谐振频率发生变化。 通过谐振频率的差来测量与一对对准的加速度分量。

    Method and product for fabricating a resonant-bridge microaccelerometer
    146.
    发明授权
    Method and product for fabricating a resonant-bridge microaccelerometer 失效
    用于制造谐振桥微加速度计的方法和产品

    公开(公告)号：US4893509A

    公开(公告)日：1990-01-16

    申请号：US291250

    申请日：1988-12-27

    Applicant: Bernard A. MacIver ,  James C. Erskine

    Inventor： Bernard A. MacIver ,  James C. Erskine

    IPC: B81B3/00 ,  G01P15/097 ,  G01P15/10 ,  G01P15/18 ,  H01L21/311

    CPC classification number: B81C1/00142 ,  G01P15/097 ,  G01P15/18 ,  H01L21/31111 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81C2201/117 ,  G01P2015/084 ,  G01P2015/0842

    Abstract: A resonant bridge microaccelerometer is formed using patterned Silicon-on-Insulator (SOI) material. A buried layer is formed in the silicon substrate using preferably oxygen ion implanting techniques. A predetermined proof mass is subsequently formed by selective deposition of an appropriate material on an epitaxially grown layer of silicon generally over the buried layer. The buried layer is subsequently removed by a hydrofluoric acid etch, thereby forming a gap generally everywhere therebetween the proof mass and the supporting silicon substrate, and delineating the resonant microbridges within the microaccelerometer.

    Abstract translation: 使用图案化的绝缘体上硅绝缘体（SOI）材料形成谐振桥式微加速度计。 使用优选的氧离子注入技术在硅衬底中形成掩埋层。 随后通过在通常在掩埋层上的硅的外延生长层上选择性沉积合适的材料来形成预定的质量。 随后通过氢氟酸蚀刻去除掩埋层，从而在校准质量块和支撑硅衬底之间通常形成间隙，并描绘微加速度计内的谐振微桥。

    PATTERN ARRANGEMENT METHOD, SILICON WAFER AND SEMICONDUCTOR DEVICE USING A SILICON WAFER WITH A PATTERN ARRANGEMENT
    148.
    发明申请
    PATTERN ARRANGEMENT METHOD, SILICON WAFER AND SEMICONDUCTOR DEVICE USING A SILICON WAFER WITH A PATTERN ARRANGEMENT 审中-公开
    图案布置方法，使用具有图案布置的硅波形的硅波和半导体器件

    公开(公告)号：US20150228637A1

    公开(公告)日：2015-08-13

    申请号：US14696893

    申请日：2015-04-27

    Applicant: Dai Nippon Printing Co., Ltd.

    Inventor： Tatsuro Takagaki

    IPC: H01L27/02 ,  H01L21/02

    CPC classification number: H01L27/0207 ,  B81B2201/0235 ,  B81B2203/0136 ,  B81B2207/053 ,  B81C1/00214 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0814 ,  G01P2015/0842 ,  H01L21/0201 ,  H01L23/544 ,  H01L41/332 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A silicon wafer includes a plurality of chip patterns arranged parallel to a first direction and a second direction intersecting the first direction, wherein the plurality of chip patterns include one or more patterns arranged in the first direction and the second direction in a straight line, the plurality of chip patterns include a first chip pattern and a second chip pattern adjacent to the first chip pattern, and the second chip pattern is arranged by rotating the first chip pattern at 90 degrees, the plurality of chip patterns are arranged so that an axis in which a cleavage plane of the silicon wafer and a surface arranged with the pattern on the silicon wafer intersect, and the first direction are different, and an angle between the axis and the first direction of the second chip pattern is 90 degrees.

    Abstract translation: 硅晶片包括平行于第一方向布置的多个芯片图案和与第一方向相交的第二方向，其中多个芯片图案包括沿第一方向布置的一个或多个图案，并且第二方向为直线， 多个芯片图案包括与第一芯片图案相邻的第一芯片图案和第二芯片图案，并且通过以90度旋转第一芯片图案来布置第二芯片图案，多个芯片图案被布置成使得 其中硅晶片的解理面和硅晶片上的图案布置的表面相交，第一方向不同，并且第二芯片图案的轴与第一方向之间的角度为90度。

    ACCELERATION SENSOR
    150.
    发明申请
    ACCELERATION SENSOR 审中-公开
    加速传感器

    公开(公告)号：US20150059476A1

    公开(公告)日：2015-03-05

    申请号：US14459318

    申请日：2014-08-14

    Applicant: SAMSUNGELECTRO-MECHANICS CO., LTD.

    Inventor： Jong Woon Kim ,  Tae Yoon Kim ,  Seung Mo Lim

    IPC: G01P15/12

    CPC classification number: G01P15/123 ,  G01P15/18 ,  G01P2015/0842

    Abstract: Disclosed herein is an acceleration sensor including: a mass body part; a flexible beam having an electrode or a piezoresistor disposed thereon and having the mass body part coupled thereto; and a support part having the flexible beam connected thereto and supporting the flexible beam, wherein the mass body part, the flexible beam, and the support part are formed by coupling first and second substrates to each other, one surface of the first substrate is provided with a first masking pattern corresponding to the flexible beam, the mass body part, and the support part, and one surface of the second substrate is provided with a second masking pattern corresponding to the mass body part and the support part.

    Abstract translation: 这里公开了一种加速度传感器，包括：质量体部; 柔性梁，其具有设置在其上并具有与其结合的质量体部分的电极或压电电感器; 以及支撑部，其具有连接到其上的柔性梁并支撑柔性梁，其中质量体部分，柔性梁和支撑部分通过将第一和第二基板彼此耦合而形成，第一基板的一个表面设置 具有对应于柔性梁，质量体部分和支撑部分的第一掩模图案，并且第二基板的一个表面设置有对应于质量体部分和支撑部分的第二掩模图案。

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