Film bulk acoustic wave resonator
    151.
    发明授权
    Film bulk acoustic wave resonator 有权
    薄膜体声波谐振器

    公开(公告)号:US07173361B2

    公开(公告)日:2007-02-06

    申请号:US11028992

    申请日:2005-01-03

    CPC classification number: H03H9/02094 H03H9/175 H03H9/176

    Abstract: A film bulk acoustic wave resonator of the invention includes a substrate; a resonant structure provided on the substrate constituted by a lower electrode, a piezoelectric film and an upper electrode; and an acoustic multilayer of a plurality of reflective films provided between the substrate and the resonant structure. At least one of the reflective films of the acoustic multilayer has a specified crystal plane orientation, and an X-ray rocking curve full width at half maximum that is preferably not greater than 10 degrees, and more preferably is not greater than 3 degrees. This makes it possible to obtain better resonance characteristics than in the case of the prior art, by increasing the efficiency with which bulk waves propagating towards the substrate are reflected.

    Abstract translation: 本发明的薄膜体声波谐振器包括:基板; 设置在由下电极,压电膜和上电极构成的基板上的谐振结构; 以及设置在所述基板和所述谐振结构之间的多个反射膜的声学多层。 声学多层反射膜中的至少一个具有特定的晶面取向,并且X射线摇摆曲线半峰全宽度优选不大于10度,更优选不大于3度。 这使得通过提高向衬底传播的体波的效率被反射,可以获得比现有技术的情况更好的谐振特性。

    Filter device capable of obtaining attenuation characteristic of sharpness in narrow band width and branching filter using the same
    152.
    发明授权
    Filter device capable of obtaining attenuation characteristic of sharpness in narrow band width and branching filter using the same 有权
    能够获得窄带宽度的锐度衰减特性的滤波器装置及使用其的分支滤波器

    公开(公告)号:US07170370B2

    公开(公告)日:2007-01-30

    申请号:US10843568

    申请日:2004-05-12

    CPC classification number: H03H9/6426 H03H9/605

    Abstract: In a filter device 10 constituted by circuit elements formed on a single substrate 11, the circuit elements includes a first wing section 14 formed between an input signal electrode 12 and an output signal electrode 13, first resonators 15a, 15b, 15c located in the first wiring section 14 and having a predetermined resonance frequency, second wiring sections 17a, 17b, 17c, 17d formed between the first wiring section 14 and a ground electrode 16, second resonators 18a, 18b, 18c, 18d located in the second wiring sections 17a, 17b, 17c, 17d and having an anti-resonance frequency forming a pass-band with the predetermined resonance frequency of the first resonators 15a, 15b, 15c. An effective electric and mechanical coupling factor of the second resonator 18a is different from those of the other resonators 15a, 15b, 15c, 18b, 18c, 18d.

    Abstract translation: 在由形成在单个基板11上的电路元件构成的滤波器装置10中,电路元件包括形成在输入信号电极12和输出信号电极13之间的第一翼部分14,第一谐振器15a,15b,15c, 在第一配线部14中具有规定的共振频率,在第一配线部14和接地电极16之间形成的第二配线部17a,17b,17c,17d,第二谐振器18a,18b,18c ,18d,位于第二配线部分17a,17b,17c,17d中,并且具有形成具有第一谐振器15a,15b,15c的预定谐振频率的通带的反共振频率。 第二谐振器18a的有效的电耦合和机械耦合系数与其它谐振器15a,15b,15c,18b,18c,18d的有效电耦合系数和机械耦合系数不同。

    Film bulk acoustic wave resonator wafer and method of fabricating a film bulk acoustic wave resonator
    154.
    发明授权
    Film bulk acoustic wave resonator wafer and method of fabricating a film bulk acoustic wave resonator 失效
    薄膜体声波谐振晶片及其制造薄膜体声波谐振器的方法

    公开(公告)号:US07071795B2

    公开(公告)日:2006-07-04

    申请号:US10980207

    申请日:2004-11-02

    Applicant: Kenji Inoue

    Inventor: Kenji Inoue

    Abstract: A film bulk acoustic wave resonator wafer of the present invention prevents electric discharge from occurring in the process of fabricating a film bulk acoustic wave resonator, thereby enhancing product reliability and yield. The film bulk acoustic wave resonator wafer of the present invention comprises a substrate, a lower electrode and an upper electrode provided on the substrate and a piezoelectric film provided between the lower electrode and upper electrode. The lower electrode and upper electrode are shorted through a window provided in the piezoelectric film. Since the lower electrode and upper electrode are therefore kept at the same potential, no electric discharge passing through the piezoelectric film occurs even during the formation of a protective film covering the upper electrode, dicing of the substrate and other processes in which discharge has heretofore been likely to occur.

    Abstract translation: 本发明的薄膜体声波谐振器晶片在制造薄膜体声波谐振器的过程中防止发生放电,从而提高产品的可靠性和产量。 本发明的薄膜体声波谐振器晶片包括设置在基板上的基板,下电极和上电极以及设置在下电极和上电极之间的压电薄膜。 下电极和上电极通过设置在压电膜中的窗口短路。 因此,由于下电极和上电极保持相同的电位,即使在形成覆盖上电极的保护膜的情况下也不会发生通过压电膜的放电,基板的切割和其他放电的其他工序 可能发生

    Process for producing optically active alpha-substituted cysteine or salt thereof, intermediate therefor, and process for producing the same
    155.
    发明申请
    Process for producing optically active alpha-substituted cysteine or salt thereof, intermediate therefor, and process for producing the same 审中-公开
    用于制备光学活性α-取代的半胱氨酸或其盐的方法及其制备方法

    公开(公告)号:US20060069134A1

    公开(公告)日:2006-03-30

    申请号:US10529039

    申请日:2003-10-01

    Abstract: The present invention provides a simple, practical, and industrially advantageous process for producing an optically active α-substituted cysteine or a salt thereof from inexpensive and readily available materials. The present invention provides a process for producing an optically active α-substituted cysteine or a salt thereof by converting a cysteine derivative into a thiazoline compound and subjecting the resulting thiazoline compound to a stereoselective substituent-introducing reaction catalyzed by an optically active quaternary ammonium salt, in particular, an axially asymmetric quaternary ammonium salt to produce an optically active thiazoline compound and then hydrolyzing the resulting thiazoline compound.

    Abstract translation: 本发明提供了一种简便,实用和工业上有用的方法,用于从廉价且易于获得的材料制备光学活性的α-取代的半胱氨酸或其盐。 本发明提供了通过将半胱氨酸衍生物转化为噻唑啉化合物并使所得到的噻唑啉化合物进行由光学活性季铵盐催化的立体选择性取代基引入反应来制备光学活性α-取代的半胱氨酸或其盐的方法, 特别是轴向不对称的季铵盐,以产生光学活性的噻唑啉化合物,然后水解所得的噻唑啉化合物。

    Method for manufacturing piezo-resonator
    156.
    发明授权
    Method for manufacturing piezo-resonator 有权
    制造压电谐振器的方法

    公开(公告)号:US07003875B2

    公开(公告)日:2006-02-28

    申请号:US10968976

    申请日:2004-10-21

    Abstract: A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.

    Abstract translation: 一种制造压电谐振器的方法,包括:在压电膜14上形成上电极层20的第一步骤,用抗蚀剂21涂覆上电极层20并在抗蚀剂上进行图案化的第二步骤,以便 具有上电极的形状,除了掩模部分之外掩蔽图案化抗蚀剂21和除去上电极层20并形成两个或更多个第一上电极15A的第三步骤,去除抗蚀剂21的第四步骤,第五步 使用抗蚀剂涂覆第一上电极15a并在抗蚀剂上进行图案化以使第一上电极15a部分暴露的步骤;将暴露的第一上电极15a的每一个蚀刻一定厚度以形成第六步骤 第二上电极15b,以及除去抗蚀剂22的第七步骤。

    Film bulk acoustic resonator
    157.
    发明授权
    Film bulk acoustic resonator 有权
    薄膜体声共振器

    公开(公告)号:US06995497B2

    公开(公告)日:2006-02-07

    申请号:US10776743

    申请日:2004-02-11

    Applicant: Kenji Inoue

    Inventor: Kenji Inoue

    CPC classification number: H03H9/02094 H03H9/175

    Abstract: A film bulk acoustic resonator of the present invention includes an upper electrode 104, a lower electrode 102, and a piezoelectric film 103 as well as an acoustic multilayer 120 that are provided between the upper electrode 104 and the lower electrode 102. Thus, a distance between the upper electrode 104 and the lower electrode 102 is extended by a thickness of the acoustic multilayer 120, and electrostatic capacitance between the upper electrode 104 and the lower electrode 102 per unit area can be reduced accordingly. Therefore, an electrode area can be increased as compared to when there is no acoustic multilayer 120, and an influence of grains of a piezoelectric material can be reduced.

    Abstract translation: 本发明的膜体声波谐振器包括上电极104,下电极102和压电膜103以及设置在上电极104和下电极102之间的声学​​多层120。 因此,上部电极104和下部电极102之间的距离延伸了声学多层体120的厚度,因此可以相应地减小每单位面积的上部电极104和下部电极102之间的静电电容。 因此,与没有声学多层膜120时相比,可以增大电极面积,能够降低压电材料的晶粒的影响。

    Surface acoustic wave device and branching filter
    158.
    发明申请
    Surface acoustic wave device and branching filter 有权
    表面声波装置和分支滤波器

    公开(公告)号:US20050206272A1

    公开(公告)日:2005-09-22

    申请号:US10800649

    申请日:2004-03-16

    CPC classification number: H03H9/6483 H03H9/14588

    Abstract: A surface acoustic wave device is provided with an input signal electrode 15 and an output signal electrode 16 to and from which an electric signal is inputted or outputted; a first surface acoustic wave resonator 18 including an input terminal 18a connected to the input signal electrode 15 and having a plurality of comb electrodes, an output terminal 18b connected to the output signal electrode 16 and having a plurality of comb electrodes, a common terminal 18c which has a plurality of comb electrodes and which forms interdigital transducers A and B together with the comb electrodes of the input terminal 18a and the comb electrodes of the output terminal 18b; and a second surface acoustic wave resonator 19 connected between the common terminal 18c of the first surface acoustic wave resonator 18 and a pair of grounding terminals 17.

    Abstract translation: 表面声波装置设置有输入信号电极15和输出信号电极16,输入或输出电信号; 第一表面声波谐振器18,其包括连接到输入信号电极15并具有多个梳状电极的输入端子18a,连接到输出信号电极16并具有多个梳状电极的输出端子18b, 端子18c,其具有多个梳状电极,并与输入端子18a的梳状电极和输出端子18b的梳状电极一起形成叉指式换能器A和B. 以及连接在第一声表面波谐振器18的公共端子18c和一对接地端子17之间的第二声表面波谐振器19。

    Electronic component
    159.
    发明申请
    Electronic component 有权
    电子元器件

    公开(公告)号:US20050200429A1

    公开(公告)日:2005-09-15

    申请号:US10985954

    申请日:2004-11-12

    Abstract: An electronic component according to an embodiment of the present invention comprises a resonator, a mounting substrate, and an electric connection member. The resonator has a terminal. The mounting substrate has a first principal surface, a second principal surface opposite to the first principal surface, and an electrode provided in a hole intersecting with the second principal surface. The electric connection member electrically connects the electrode of the mounting substrate to the terminal of the resonator. One end of the electrode of the mounting substrate is provided along the second principal surface. The electric connection member is provided on the one end of the electrode of the mounting substrate. The resonator is provided on the electric connection member so that the terminal of the resonator is in contact with the electric connection member.

    Abstract translation: 根据本发明的实施例的电子部件包括谐振器,安装基板和电连接部件。 谐振器具有端子。 安装基板具有第一主表面,与第一主表面相对的第二主表面,以及设置在与第二主表面相交的孔中的电极。 电连接构件将安装基板的电极与谐振器的端子电连接。 沿着第二主表面设置安装基板的电极的一端。 电连接构件设置在安装基板的电极的一端。 谐振器设置在电连接构件上,使得谐振器的端子与电连接构件接触。

Patent Agency Ranking