公开(公告)号：US08878055B2

公开(公告)日：2014-11-04

申请号：US12852991

申请日：2010-08-09

申请人： Keith E. Fogel ,  William S. Graham ,  Jeehwan Kim ,  Harold J. Hovel ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Keith E. Fogel ,  William S. Graham ,  Jeehwan Kim ,  Harold J. Hovel ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L31/00 ,  H01L31/052 ,  H01L31/0236 ,  H01L31/0352

CPC分类号： H01L31/0527 ,  H01L31/02366 ,  H01L31/03529 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.

摘要翻译： 光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。 连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。 光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。

公开(公告)号：US08866003B2

公开(公告)日：2014-10-21

申请号：US13599591

申请日：2012-08-30

申请人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jee H. Kim ,  Mohamed Saad ,  Devendra K. Sadana

发明人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jee H. Kim ,  Mohamed Saad ,  Devendra K. Sadana

IPC分类号： H01L31/0288 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0392

CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/1816 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H2 and the inert gas.

摘要翻译： 使用载气内的惰性气体形成光伏器件的p掺杂半导体层。 载气内的惰性气体的存在增加了p掺杂半导体层内的自由空穴密度。 这降低了在与透明导电材料层的界面处的肖特基势垒，从而显着降低了光伏器件的串联电阻。 串联电阻的降低增加了光伏器件的开路电压，填充因子和效率。 如果p掺杂半导体层也掺杂有碳，并且具有大于1.85V的带隙，则该效果更加突出。 如果载气包括H 2和惰性气体的混合物，则p掺杂半导体层的p掺杂半导体材料可以被氢化。

公开(公告)号：US08828504B2

公开(公告)日：2014-09-09

申请号：US12971243

申请日：2010-12-17

申请人： Osama Tobail ,  Ahmed Abou-Kandil ,  Mostafa M. El-Ashry ,  Jeehwan Kim ,  Paul M. Kozlowski ,  Mohamed Saad ,  Devendra K. Sadana

发明人： Osama Tobail ,  Ahmed Abou-Kandil ,  Mostafa M. El-Ashry ,  Jeehwan Kim ,  Paul M. Kozlowski ,  Mohamed Saad ,  Devendra K. Sadana

IPC分类号： C23C14/00 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  C23C14/14 ,  C23C14/22

CPC分类号： C23C14/0021 ,  C23C14/14 ,  C23C14/22 ,  C23C16/45514 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02274

摘要： A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.

摘要翻译： 通过蒸发一种或多种固体材料并使得到的蒸气和含氢气体进入两个电极之间的空间，在受控真空中在基板上形成氢化薄膜。 电极之一包括允许蒸汽进入空间的开口。 在空间内产生等离子体以引起含氢气体的解离并促进材料和含氢气体之间的反应。

公开(公告)号：US08765577B2

公开(公告)日：2014-07-01

申请号：US13614308

申请日：2012-09-13

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/461

CPC分类号： H01L29/7847 ,  H01L21/02532 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/76254

摘要： A method of forming a strained semiconductor material that in one embodiment includes forming a cleave layer in a host semiconductor substrate, and contacting a strain inducing material layer on a surface of a transfer portion of the host semiconductor substrate. A handle substrate is then contacted to an exposed surface of the stress inducing material layer. The transfer portion of the host semiconductor substrate may then be separated from the host semiconductor substrate along the cleave layer. A dielectric layer is formed directly on the transfer portion of the host semiconductor substrate. The handle substrate and the stress inducing material are then removed, wherein the transferred portion of the host semiconductor substrate provides a strained semiconductor layer that is in direct contact with a dielectric layer.

摘要翻译： 一种形成应变半导体材料的方法，其在一个实施方案中包括在主半导体衬底中形成切割层，并且在主半导体衬底的转移部分的表面上使应变诱导材料层接触。 然后将手柄基板与应力诱导材料层的暴露表面接触。 然后可以将主体半导体衬底的转移部分沿着切割层与主体半导体衬底分离。 电介质层直接形成在主体半导体衬底的转移部分上。 然后去除手柄衬底和应力诱导材料，其中主体半导体衬底的转移部分提供与电介质层直接接触的应变半导体层。

公开(公告)号：US20140073119A1

公开(公告)日：2014-03-13

申请号：US13612675

申请日：2012-09-12

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/20

CPC分类号： H01L29/7847 ,  H01L21/02532 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/76254

摘要： A method of forming a strained semiconductor material that in one embodiment includes forming a cleave layer in a host semiconductor substrate, and contacting a strain inducing material layer on a surface of a transfer portion of the host semiconductor substrate. A handle substrate is then contacted to an exposed surface of the stress inducing material layer. The transfer portion of the host semiconductor substrate may then be separated from the host semiconductor substrate along the cleave layer. A dielectric layer is formed directly on the transfer portion of the host semiconductor substrate. The handle substrate and the stress inducing material are then removed, wherein the transferred portion of the host semiconductor substrate provides a strained semiconductor layer that is in direct contact with a dielectric layer.

摘要翻译： 一种形成应变半导体材料的方法，其在一个实施方案中包括在主半导体衬底中形成切割层，并且在主半导体衬底的转移部分的表面上使应变诱导材料层接触。 然后将手柄基板与应力诱导材料层的暴露表面接触。 然后可以将主体半导体衬底的转移部分沿着切割层与主体半导体衬底分离。 电介质层直接形成在主体半导体衬底的转移部分上。 然后去除手柄衬底和应力诱导材料，其中主体半导体衬底的转移部分提供与电介质层直接接触的应变半导体层。

公开(公告)号：US20140070215A1

公开(公告)日：2014-03-13

申请号：US13614308

申请日：2012-09-13

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/20 ,  H01L29/02 ,  H01L29/04

CPC分类号： H01L29/7847 ,  H01L21/02532 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/76254

摘要： A method of forming a strained semiconductor material that in one embodiment includes forming a cleave layer in a host semiconductor substrate, and contacting a strain inducing material layer on a surface of a transfer portion of the host semiconductor substrate. A handle substrate is then contacted to an exposed surface of the stress inducing material layer. The transfer portion of the host semiconductor substrate may then be separated from the host semiconductor substrate along the cleave layer. A dielectric layer is formed directly on the transfer portion of the host semiconductor substrate. The handle substrate and the stress inducing material are then removed, wherein the transferred portion of the host semiconductor substrate provides a strained semiconductor layer that is in direct contact with a dielectric layer.

公开(公告)号：US08617971B2

公开(公告)日：2013-12-31

申请号：US13604963

申请日：2012-09-06

申请人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/20

CPC分类号： H01L27/12 ,  H01L29/1025 ,  H01L29/7781

摘要： Improved semiconductor substrates are provided that employ a wide bandgap material between the channel and the insulator. A semiconductor substrate comprises a channel layer comprised of a III-V material; an insulator layer; and a wide bandgap material between the channel layer and the insulator layer, wherein a conduction band offset (ΔEc) between the channel layer and the wide bandgap material is between 0.05 eV and 0.8 eV. The channel layer can be comprised of, for example, In1−xGaxAs or In1−xGaxSb, with x varying from 0 to 1. The wide bandgap material can be comprised of, for example, In1−yAlyAs, In1−yAlyP, Al1−yGayAs or In1−yGayP, with y varying from 0 to 1.

公开(公告)号：US08598006B2

公开(公告)日：2013-12-03

申请号：US12724608

申请日：2010-03-16

申请人： Joel P. de Souza ,  Masafumi Hamaguchi ,  Ahmet S. Ozcan ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Donald R. Wall

发明人： Joel P. de Souza ,  Masafumi Hamaguchi ,  Ahmet S. Ozcan ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Donald R. Wall

IPC分类号： H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/324 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7848

摘要： An embedded epitaxial semiconductor portion having a different composition than matrix of the semiconductor substrate is formed with a lattice mismatch and epitaxial alignment with the matrix of the semiconductor substrate. The temperature of subsequent ion implantation steps is manipulated depending on the amorphizing or non-amorphizing nature of the ion implantation process. For a non-amorphizing ion implantation process, the ion implantation processing step is performed at an elevated temperature, i.e., a temperature greater than nominal room temperature range. For an amorphizing ion implantation process, the ion implantation processing step is performed at nominal room temperature range or a temperature lower than nominal room temperature range. By manipulating the temperature of ion implantation, the loss of strain in a strained semiconductor alloy material is minimized.

摘要翻译： 具有与半导体衬底的矩阵不同的组成的嵌入式外延半导体部分与半导体衬底的矩阵形成晶格失配和外延对准。 随后离子注入步骤的温度根据离子注入工艺的非晶化或非非晶化性质进行操作。 对于非非晶化离子注入工艺，离子注入处理步骤在升高的温度，即大于标称室温范围的温度下进行。 对于非晶化离子注入工艺，离子注入处理步骤在标称室温范围或低于标称室温范围的温度下进行。 通过操纵离子注入的温度，使应变半导体合金材料中的应变损失最小化。

公开(公告)号：US20130316538A1

公开(公告)日：2013-11-28

申请号：US13478749

申请日：2012-05-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

IPC分类号： H01L21/304 ,  H01L21/306

CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

公开(公告)号：US20130316488A1

公开(公告)日：2013-11-28

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。