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公开(公告)号：US10340021B2
公开(公告)日：2019-07-02
申请号：US15203885
申请日：2016-07-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiko Amano , Kouhei Toyotaka , Hiroyuki Miyake , Aya Miyazaki , Hideaki Shishido , Koji Kusunoki
Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.
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公开(公告)号：US10249644B2
公开(公告)日：2019-04-02
申请号：US15041356
申请日：2016-02-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki Miyake , Koji Kusunoki
IPC: G02F1/1368 , H01L27/12 , H01L29/786 , H01L29/24 , G02F1/1343 , G02F1/1345 , G02F1/1362
Abstract: An object is to provide a display device with high productivity by reducing the number of masks and the number of steps. Another object is to provide a display device with high yield. A pixel transistor and a driver transistor are formed over a substrate having an insulating surface in the same step. A pixel electrode electrically connected to the pixel transistor is one electrode. The other electrode is supplied with a fixed potential. A region where a pair of electrodes overlap with each other is used as a capacitor. Accordingly, the number of masks and steps are reduced to provide a display device with high productivity.
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公开(公告)号：US10073571B2
公开(公告)日：2018-09-11
申请号：US14691933
申请日：2015-04-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kazunori Watanabe , Hiroyuki Miyake , Yuji Iwaki , Hideaki Shishido , Kouhei Toyotaka , Koji Kusunoki
IPC: G06F3/041 , G06F3/044 , G02F1/1333
CPC classification number: G06F3/044 , G02F1/13338 , G06F3/0412 , G06F2203/04102
Abstract: To increase the detection sensitivity of a touch panel, increase the visibility of a touch panel, provide a bendable touch panel, provide a thin touch panel, or provide a lightweight touch panel. The touch sensor has a first substrate, a first conductive layer, a second conductive layer, and an insulating layer. The first conductive layer includes a region between the first substrate and the second conductive layer. The insulating layer includes a region between the first conductive layer and the second conductive layer. The first conductive layer, the second conductive layer, and the insulating layer form a capacitor. The second conductive layer has an opening. The opening in the second conductive layer and the first conductive layer overlap with each other in a region.
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公开(公告)号：US20180151597A1
公开(公告)日：2018-05-31
申请号：US15820965
申请日：2017-11-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kenichi Okazaki , Daisuke Kurosaki , Yasutaka Nakazawa , Kazunori Watanabe , Koji Kusunoki
IPC: H01L27/12 , H01L29/786 , G02F1/1368 , G02F1/1362 , G02F1/1333 , G02F1/1335 , H01L29/04
Abstract: A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.
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Patent Agency Ranking
公开(公告)号：US09960213B2
公开(公告)日：2018-05-01
申请号：US14690834
申请日：2015-04-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Naoyuki Senda , Masataka Nakada , Takayuki Abe , Koji Kusunoki , Hideaki Shishido
CPC classification number: H01L27/323 , G06F3/0412 , G06F3/044 , G06F3/045 , G06F15/0216 , H01L27/322 , H01L51/0097 , H01L51/5253 , H01L51/5284 , H01L2251/5338
Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.
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公开(公告)号：US09851820B2
公开(公告)日：2017-12-26
申请号：US15290045
申请日：2016-10-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Koji Kusunoki , Yoshiharu Hirakata
IPC: G06F3/0354 , G02F1/1343 , G02F1/1335 , G02F1/1362 , G02F1/167 , G02F1/1345 , H01L27/32 , G02F1/1333 , G02F1/1334 , G02F1/1368 , G06F3/041 , G09G3/20 , G02F1/1339 , G09G3/3233 , G09G3/36 , G02F1/1337
CPC classification number: G06F3/03547 , G02F1/133305 , G02F1/133345 , G02F1/13338 , G02F1/1334 , G02F1/133512 , G02F1/133514 , G02F1/133553 , G02F1/133555 , G02F1/1337 , G02F1/1339 , G02F1/13394 , G02F1/134309 , G02F1/134336 , G02F1/13452 , G02F1/1362 , G02F1/136227 , G02F1/13624 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/13398 , G02F2001/134345 , G02F2001/136222 , G02F2201/44 , G06F3/0416 , G06F2203/04102 , G06F2203/04103 , G09G3/2003 , G09G3/2007 , G09G3/3233 , G09G3/3648 , G09G3/3677 , G09G2300/023 , G09G2310/08 , G09G2320/0247 , G09G2330/021 , G09G2380/02 , H01L27/3232 , H01L27/3267 , H01L2227/323
Abstract: Provided is a novel display panel that is highly convenient or reliable, a novel data processor that is highly convenient or reliable, or a method for manufacturing a novel display panel that is highly convenient or reliable. The display panel includes a pixel and a terminal electrically connected to the pixel. The pixel includes a first insulating film, a first contact portion in a first opening provided in the first insulating film, a pixel circuit electrically connected to the first contact portion, a second contact portion electrically connected to the pixel circuit, a first display element electrically connected to the first contact portion, and a second display element electrically connected to the second contact portion. The first insulating film includes a region lying between the first display element and the second display element. The terminal includes a surface at which contact with other component can be made.
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公开(公告)号：US09525011B2
公开(公告)日：2016-12-20
申请号：US14690834
申请日：2015-04-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Naoyuki Senda , Masataka Nakada , Takayuki Abe , Koji Kusunoki , Hideaki Shishido
Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.
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公开(公告)号：US09396812B2
公开(公告)日：2016-07-19
申请号：US14245097
申请日：2014-04-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiko Amano , Kouhei Toyotaka , Hiroyuki Miyake , Aya Miyazaki , Hideaki Shishido , Koji Kusunoki
CPC classification number: G11C19/28 , G09G3/3677 , G09G3/3696 , G09G2300/0809 , G09G2310/0286 , G11C19/184 , H01L25/03 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/127 , H01L27/1288 , H01L2924/0002 , H03K19/0013 , H05K7/02 , H01L2924/00
Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.
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公开(公告)号：US08890158B2
公开(公告)日：2014-11-18
申请号：US13922537
申请日：2013-06-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Takahiro Tsuji , Teruaki Ochiai , Koji Kusunoki , Hidekazu Miyairi
IPC: H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/45 , H01L29/786
CPC classification number: H01L29/7869 , H01L29/45
Abstract: An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.
Abstract translation: 目的是提供一种高度可靠的晶体管和包括晶体管的半导体器件。 一种包括栅电极的半导体器件; 栅电极上的栅极绝缘膜; 栅极绝缘膜上的氧化物半导体膜; 以及氧化物半导体膜上方的源电极和漏电极，其中，当电压大于电压时，源电极和漏电极之间的电流（导通电流）的温度依赖性获得氧化物半导体膜的活化能 或等于施加到栅电极的阈值电压大于或等于0meV且小于或等于25meV。
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