Abstract:
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
Abstract:
A computer sets a process area based on an image obtained by observing a mask, and determines the positions of representative points that form a contour of the process area for each pixel with sub-pixel accuracy that is better than a pixel, the position of each of the representative points being able to be set to either the center position of the pixel or a position displaced therefrom. Furthermore, for the pixels within the process area, the computer sets the center positions of the pixels as the representative points and corrects the positions of the representative points of the pixels within the process area on a sub-pixel basis such that nonuniformity between the representative points is reduced. When the mask is processed, the charged particle beam is applied with sub-pixel accuracy to the positions of the representative points that form the contour for the pixels that includes the contour of the process area and to the positions of the corrected representative points for the pixels within the process area.
Abstract:
After a scan area for observing or processing a mask is set, a computer of the charged particle beam apparatus determines a plurality of scan lines in the scan area by the following steps of: setting a scan line along the outer circumference of the scan area; determining a scan line inside and along the thus set scan line; determining a scan line inside and along the thus determined scan line; and repeating the step of determining a scan line. After the scan lines are determined, the computer controls a scanning circuit to apply an ion beam to the scan lines while thinning out scan lines and/or pixels.
Abstract:
A laser mark which will be the positioning mark for a secondary charged particle image in the charged particle beam apparatus is applied by moving the sample processing/observation area in the charged particle beam apparatus so as to come into the view field while performing an observation by an infrared microscope, and by a using a laser optical system disposed coaxially with an optical observation system, the mark made at the periphery of the processing/observation object area. Next, by a superposition of an infrared transmission image and a CAD data, the processing/observation object area and the laser mark are registered onto the CAD data. And, by a correlation of the registered data read from the charged particle beam apparatus and the secondary charged particle image, it is possible to accurately and easily determine the processing position.
Abstract:
To provide a fluorescent X-ray analysis apparatus, whereby a peak-back ratio is improved by effectively exciting a focused element and a detection limit of the focused element is improved by decreasing a scattered X-ray to be a background. A sample housing has one or more wall surfaces made of a material through which an X-ray transmits and an X-ray source is arranged so that a primary X-ray is irradiated on the wall surface. In addition, the sample housing is arranged so that a wall surface different from a wall surface on which the primary X-ray is irradiated is opposed to an X-ray detector incident window. Further, the primary X-ray from the X-ray source is arranged so as to be able to irradiate the wall surface of the sample housing to which the X-ray detector incident window is opposed. The sample housing has a shape extending in response to extension of a viewing filed that a detection element in the X-ray detector is seen from the X-ray detector incident window. In addition, on the wall of the sample housing, a metal for secondarily exciting the focused element is arranged on an area other than an area through which the primary X-ray transmits and an area where the fluorescent X-ray from the focused element passes to the detector.
Abstract:
A scanning probe microscope has a probe tip for undergoing a scanning operation to scan a sample surface in X- and Y-directions parallel to the sample surface and for undergoing movement in a Z-direction vertical to the sample surface. A vibration unit vibrates the probe tip at a vibration frequency that resonates with of forcedly vibrates the probe tip. An observation unit collects observational data from the sample surface when the probe tip is in proximity or contact with the sample surface. A detection unit detects a variation in the state of vibration of the probe tip when the probe tip is in proximity or contact with the sample surface during a scanning operation. A control controls scanning of the probe tip in the X- and Y-directions and movement of the probe tip in the Z-direction, and controls scanning of the probe tip in a direction parallel to the sample surface after the observational data is collected from the sample surface and until the probe tip reached a next observation position in the X- and Y-direction. During a scanning operation, the control unit controls the probe tip to move in the Z-direction away from the sample surface only when the detection unit detects a variation in the state of vibration of the probe tip.
Abstract:
A sample to be processed is disposed within a processing cell which contains a liquid. Scratch processing using a scanning probe microscope is performed within the liquid so that chips or shavings removed from the sample scatter within the liquid rather than collecting on the surface of the sample. The processing cell has a supply port and a discharge port so that new liquid can be supplied within the cell through the supply port after the termination of the scratch processing to clean the cell. In this manner, chips or shavings generated by scratch processing a defect portion of the sample can be removed completely without being collected at the surface of a sample despite the surface tension of adsorbed water existing on the sample surface and/or electrostatic charges caused by friction.
Abstract:
A method of fabricating a three-dimensional microstructure provides data corresponding to information relating to the structure of a three-dimensional microstructure design. A sample is processed in accordance with the provided data by irradiating the sample with a charged-particle beam while controlling processing conditions of the charged-particle beam. Dimensions of the processed sample are compared with the provided data to identify differences between the structure of the processed sample and the structure of the three-dimensional microstructure design. The sample is then irradiated again with a charged-particle beam to correct the identified structural differences while adjusting the processing conditions of the charged-particle beam to thereby fabricate a three-dimensional microstructure having a structure substantially the same as the structure of the three-dimensional microstructure design.
Abstract:
A superconducting X-ray detection apparatus has a refrigerator, a cooling head cooled by the refrigerator, and a stacked structure connected to an end portion of the cooling head. The stacked structure comprises a sensor holder, a low-temperature first-stage amplifier connected to the sensor holder, and a superconducting X-ray detector mounted on the low-temperature first-stage amplifier.
Abstract:
There is provided a device in which a probe can be used for both of observation and correction, and which can, even if a next generation photomask of ultra minute structure is made an object, perform a desired processing without injuring a normal portion in a process of obtaining information of a position and a shape of a defect part, and without impairing the probe also at a processing time. It has been adapted such that, at an observation time, a contact pressure between a probe and a mask is reduced to 0.1 nN by applying a vibration of 1 kHz to 1 MHz to the probe. It has been adapted such that a cantilever used in the present invention is formed by a silicon material of 100–600 μm in length and 5–50 μm in thickness and, at the observation time, the probe contacts with the mask at the contact pressure of 0.1 nN and, at the processing time, a defect correction can be performed by causing the probe to contact with the mask at the contact pressure of 10 nN to 1 mN.