摘要:
A laser mark which will be the positioning mark for a secondary charged particle image in the charged particle beam apparatus is applied by moving the sample processing/observation area in the charged particle beam apparatus so as to come into the view field while performing an observation by an infrared microscope, and by a using a laser optical system disposed coaxially with an optical observation system, the mark made at the periphery of the processing/observation object area. Next, by a superposition of an infrared transmission image and a CAD data, the processing/observation object area and the laser mark are registered onto the CAD data. And, by a correlation of the registered data read from the charged particle beam apparatus and the secondary charged particle image, it is possible to accurately and easily determine the processing position.
摘要:
A laser mark which will be the positioning mark for a secondary charged particle image in the charged particle beam apparatus is applied by moving the sample processing/observation area in the charged particle beam apparatus so as to come into the view field while performing an observation by an infrared microscope, and by a using a laser optical system disposed coaxially with an optical observation system, the mark made at the periphery of the processing/observation object area. Next, by a superposition of an infrared transmission image and a CAD data, the processing/observation object area and the laser mark are registered onto the CAD data. And, by a correlation of the registered data read from the charged particle beam apparatus and the secondary charged particle image, it is possible to accurately and easily determine the processing position.
摘要:
Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface. The method of preparing a sample piece for a transmission electron microscope is characterized by including: a first step of cutting out the sample piece from a sample body Wa with a charged particle beam, the sample piece being coupled to the sample body at a coupling portion; a second step of grabbing with the microtweezers the grabbing portion of the sample piece with the finished surface of the sample piece cut out in the first step being covered with the microtweezers; a third step of detaching the sample piece grabbed with the microtweezers in the second step from the sample body by cutting the coupling portion with the charged particle beam with a grabbed state of the sample piece being maintained; and a fourth step of transferring and fixing with the microtweezers the sample piece detached in the third step onto a sample holder.
摘要:
A composite charged particle beam apparatus comprises an FIB column having an ion beam irradiation axis and an SEM column having an electron beam irradiation axis, the FIB and SEM columns being arranged relative to one another so that the beam irradition axes intersect with each other substantially at a right angle. A sample stage is provided for mounting a sample, and a detector detects secondary particles generated from the sample when irradiated with the ion beam or the electron beam. An observation image formation portion forms an FIB image and an SEM image based on a detection signal of the detector. A display portion displays the FIB image and the SEM image in which a horizontal direction of the sample in the FIB image and said horizontal direction of the sample in the SEM image are the same thereby making it possible for an operator to easily comprehend the positional relationship of the observation image of the sample.
摘要:
A composite charged particle beam apparatus comprises an FIB column and an SEM column arranged so that the ion and the electron beam irradition axes intersect with each other substantially at a right angle. A sample stage mounts a sample, and a detector detects secondary particles generated from the sample when irradiated with the ion beam or the electron beam. An observation image formation portion forms an FIB image and an SEM image based on a detection signal of the detector. An optical microscope observes the sample, and a display portion displays the FIB image, the SEM image and an optical microscope image. A stage control portion changes the coordinate system of the sample stage to any selected one of the coordinate systems of the FIB image, the SEM image and the optical microscope image.
摘要:
Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface. The method of preparing a sample piece for a transmission electron microscope is characterized by including: a first step of cutting out the sample piece from a sample body Wa with a charged particle beam, the sample piece being coupled to the sample body at a coupling portion; a second step of grabbing with the microtweezers the grabbing portion of the sample piece with the finished surface of the sample piece cut out in the first step being covered with the microtweezers; a third step of detaching the sample piece grabbed with the microtweezers in the second step from the sample body by cutting the coupling portion with the charged particle beam with a grabbed state of the sample piece being maintained; and a fourth step of transferring and fixing with the microtweezers the sample piece detached in the third step onto a sample holder.
摘要:
In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.
摘要:
In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.
摘要:
A fine stencil structure correction device has a charged particle beam microscope lens-barrel which scans and corrects shapes of defect portions of a fine stencil structure sample using an etching or deposition function, and the fine stencil structure correction device further comprises transmitted beam detecting means for detecting a transmitted beam which is the charged particle beam penetrating the sample provided on a sample stage when the sample is scanned by the charged particle beam.