Method of determining processing position in charged particle beam apparatus, and infrared microscope used in the method
    1.
    发明授权
    Method of determining processing position in charged particle beam apparatus, and infrared microscope used in the method 有权
    确定带电粒子束装置的加工位置的方法和该方法中使用的红外显微镜

    公开(公告)号:US07459699B2

    公开(公告)日:2008-12-02

    申请号:US11286684

    申请日:2005-11-23

    IPC分类号: G01J1/00 G01N21/00 G01N23/00

    CPC分类号: G01N23/225 H01J2237/317

    摘要: A laser mark which will be the positioning mark for a secondary charged particle image in the charged particle beam apparatus is applied by moving the sample processing/observation area in the charged particle beam apparatus so as to come into the view field while performing an observation by an infrared microscope, and by a using a laser optical system disposed coaxially with an optical observation system, the mark made at the periphery of the processing/observation object area. Next, by a superposition of an infrared transmission image and a CAD data, the processing/observation object area and the laser mark are registered onto the CAD data. And, by a correlation of the registered data read from the charged particle beam apparatus and the secondary charged particle image, it is possible to accurately and easily determine the processing position.

    摘要翻译: 作为带电粒子束装置中的二次带电粒子图像的定位标记的激光标记是通过移动带电粒子束装置中的样品处理/观察区域进行观察的场所,同时进行观察 通过使用与光学观察系统同轴设置的激光光学系统,在处理/观察对象区域的周围形成标记。 接下来,通过红外透射图像和CAD数据的叠加,将处理/观察对象区域和激光标记登记在CAD数据上。 并且,通过从带电粒子束装置读取的登录数据与二次带电粒子图像的相关性,可以准确且容易地确定处理位置。

    Method of determining processing position in charged particle beam apparatus, and infrared microscope used in the method
    2.
    发明申请
    Method of determining processing position in charged particle beam apparatus, and infrared microscope used in the method 有权
    确定带电粒子束装置的加工位置的方法和该方法中使用的红外显微镜

    公开(公告)号:US20060118733A1

    公开(公告)日:2006-06-08

    申请号:US11286684

    申请日:2005-11-23

    IPC分类号: G01N23/00

    CPC分类号: G01N23/225 H01J2237/317

    摘要: A laser mark which will be the positioning mark for a secondary charged particle image in the charged particle beam apparatus is applied by moving the sample processing/observation area in the charged particle beam apparatus so as to come into the view field while performing an observation by an infrared microscope, and by a using a laser optical system disposed coaxially with an optical observation system, the mark made at the periphery of the processing/observation object area. Next, by a superposition of an infrared transmission image and a CAD data, the processing/observation object area and the laser mark are registered onto the CAD data. And, by a correlation of the registered data read from the charged particle beam apparatus and the secondary charged particle image, it is possible to accurately and easily determine the processing position.

    摘要翻译: 作为带电粒子束装置中的二次带电粒子图像的定位标记的激光标记是通过移动带电粒子束装置中的样品处理/观察区域进行观察的场所,同时进行观察 通过使用与光学观察系统同轴设置的激光光学系统,在处理/观察对象区域的周围形成标记。 接下来,通过红外透射图像和CAD数据的叠加,将处理/观察对象区域和激光标记登记在CAD数据上。 并且,通过从带电粒子束装置读取的登录数据与二次带电粒子图像的相关性,可以准确且容易地确定处理位置。

    METHOD OF PREPARING A TRANSMISSION ELECTRON MICROSCOPE SAMPLE AND A SAMPLE PIECE FOR A TRANSMISSION ELECTRON MICROSCOPE
    3.
    发明申请
    METHOD OF PREPARING A TRANSMISSION ELECTRON MICROSCOPE SAMPLE AND A SAMPLE PIECE FOR A TRANSMISSION ELECTRON MICROSCOPE 有权
    传输电子显微镜样品的制备方法和传输电子显微镜的样品片

    公开(公告)号:US20090119807A1

    公开(公告)日:2009-05-07

    申请号:US12264750

    申请日:2008-11-04

    IPC分类号: G01N13/10

    摘要: Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface. The method of preparing a sample piece for a transmission electron microscope is characterized by including: a first step of cutting out the sample piece from a sample body Wa with a charged particle beam, the sample piece being coupled to the sample body at a coupling portion; a second step of grabbing with the microtweezers the grabbing portion of the sample piece with the finished surface of the sample piece cut out in the first step being covered with the microtweezers; a third step of detaching the sample piece grabbed with the microtweezers in the second step from the sample body by cutting the coupling portion with the charged particle beam with a grabbed state of the sample piece being maintained; and a fourth step of transferring and fixing with the microtweezers the sample piece detached in the third step onto a sample holder.

    摘要翻译: 提供了一种制备透射电子显微镜样品的方法,用于透射电子显微镜的样品片,其包括可透射电子显微镜观察的基本上平面的成品表面,以及微型加工者可以在不接触成品的情况下抓取的抓取部分 表面。 制备透射电子显微镜样品的方法的特征在于包括:第一步骤,利用带电粒子束从样品体Wa切出样品片,样品片以耦合部分 ; 第二步骤是用微型加湿器抓住样品的抓取部分,其中在第一步骤中切出的样品的成品表面被微型加工机覆盖; 第三步骤,通过用保持样品的抓取状态的带电粒子束切割耦合部分,将样品从第二步骤中剥离出来; 以及第四步骤,用微型加工机将第三步骤中拆卸的样品片转移和固定到样品架上。

    Composite charged particle beam apparatus
    4.
    发明授权
    Composite charged particle beam apparatus 有权
    复合带电粒子束装置

    公开(公告)号:US09214316B2

    公开(公告)日:2015-12-15

    申请号:US13622023

    申请日:2012-09-18

    摘要: A composite charged particle beam apparatus comprises an FIB column having an ion beam irradiation axis and an SEM column having an electron beam irradiation axis, the FIB and SEM columns being arranged relative to one another so that the beam irradition axes intersect with each other substantially at a right angle. A sample stage is provided for mounting a sample, and a detector detects secondary particles generated from the sample when irradiated with the ion beam or the electron beam. An observation image formation portion forms an FIB image and an SEM image based on a detection signal of the detector. A display portion displays the FIB image and the SEM image in which a horizontal direction of the sample in the FIB image and said horizontal direction of the sample in the SEM image are the same thereby making it possible for an operator to easily comprehend the positional relationship of the observation image of the sample.

    摘要翻译: 复合带电粒子束装置包括具有离子束照射轴的FIB柱和具有电子束照射轴的SEM柱,FIB和SEM列相对于彼此布置,使得束辐照轴基本上彼此相交 一个直角 提供了用于安装样品的样品台,并且当用离子束或电子束照射时,检测器检测从样品产生的二次颗粒。 观察图像形成部基于检测器的检测信号,形成FIB图像和SEM图像。 显示部显示FIB图像中的样本的水平方向和SEM图像中的样本的水平方向相同的FIB图像和SEM图像,由此能够使操作者容易地理解位置关系 的样品的观察图像。

    Composite charged particle beam apparatus
    5.
    发明授权
    Composite charged particle beam apparatus 有权
    复合带电粒子束装置

    公开(公告)号:US09024280B2

    公开(公告)日:2015-05-05

    申请号:US13622028

    申请日:2012-09-18

    摘要: A composite charged particle beam apparatus comprises an FIB column and an SEM column arranged so that the ion and the electron beam irradition axes intersect with each other substantially at a right angle. A sample stage mounts a sample, and a detector detects secondary particles generated from the sample when irradiated with the ion beam or the electron beam. An observation image formation portion forms an FIB image and an SEM image based on a detection signal of the detector. An optical microscope observes the sample, and a display portion displays the FIB image, the SEM image and an optical microscope image. A stage control portion changes the coordinate system of the sample stage to any selected one of the coordinate systems of the FIB image, the SEM image and the optical microscope image.

    摘要翻译: 复合带电粒子束装置包括FIB柱和SEM柱,其布置成使得离子和电子束辐照轴基本上彼此相交。 样品台安装样品,当用离子束或电子束照射时,检测器检测从样品产生的二次颗粒。 观察图像形成部基于检测器的检测信号,形成FIB图像和SEM图像。 光学显微镜观察样品,显示部显示FIB图像,SEM图像和光学显微镜图像。 舞台控制部分将样本舞台的坐标系改变为FIB图像,SEM图像和光学显微镜图像的任意一个坐标系。

    Method of preparing a transmission electron microscope sample and a sample piece for a transmission electron microscope
    6.
    发明授权
    Method of preparing a transmission electron microscope sample and a sample piece for a transmission electron microscope 有权
    制备透射电子显微镜样品的方法和透射电子显微镜的样品片

    公开(公告)号:US08191168B2

    公开(公告)日:2012-05-29

    申请号:US12264750

    申请日:2008-11-04

    IPC分类号: G01N13/10

    摘要: Provided is a method of preparing a sample piece for a transmission electron microscope, the sample piece for a transmission electron microscope including a substantially planar finished surface which can be observed with the transmission electron microscope and a grabbing portion which microtweezers can grab without contacting the finished surface. The method of preparing a sample piece for a transmission electron microscope is characterized by including: a first step of cutting out the sample piece from a sample body Wa with a charged particle beam, the sample piece being coupled to the sample body at a coupling portion; a second step of grabbing with the microtweezers the grabbing portion of the sample piece with the finished surface of the sample piece cut out in the first step being covered with the microtweezers; a third step of detaching the sample piece grabbed with the microtweezers in the second step from the sample body by cutting the coupling portion with the charged particle beam with a grabbed state of the sample piece being maintained; and a fourth step of transferring and fixing with the microtweezers the sample piece detached in the third step onto a sample holder.

    摘要翻译: 提供了一种制备透射电子显微镜样品的方法,用于透射电子显微镜的样品片,其包括可透射电子显微镜观察的基本上平面的成品表面,以及微型加工者可以在不接触成品的情况下抓取的抓取部分 表面。 制备透射电子显微镜样品的方法的特征在于包括:第一步骤,利用带电粒子束从样品体Wa切出样品片,样品片以耦合部分 ; 第二步骤是用微型加湿器抓住样品的抓取部分,其中在第一步骤中切出的样品的成品表面被微型加工机覆盖; 第三步骤,通过用保持样品的抓取状态的带电粒子束切割耦合部分,将样品从第二步骤中剥离出来; 以及第四步骤,用微型加工机将第三步骤中拆卸的样品片转移和固定到样品架上。

    Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample
    7.
    发明授权
    Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample 有权
    测量薄膜样品的方法和装置以及制造薄膜样品的方法和装置

    公开(公告)号:US07518109B2

    公开(公告)日:2009-04-14

    申请号:US11824994

    申请日:2007-07-02

    IPC分类号: G01N23/225

    摘要: In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

    摘要翻译: 在测量向薄膜样品照射电子束的薄膜样品的测量方法中,通过利用二次电子来检测产生的二次电子和测量薄膜样品的膜厚度,但是测量膜厚度 准确地说,即使当照射的电子束的当前量变化时,也能够在短时间内容易地进行。 照射电子束2b,并且通过二次电子检测器6检测所产生的二次电子4.由膜厚测量区域检测到的二次电子量和在第二电子检测器检测到的二次电子量构成的计算值 通过第一计算装置11计算参考区域。可以从标准薄膜样品的校准数据和由样品5计算的计算值来计算膜厚测量区域的膜厚度。

    Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample
    8.
    发明申请
    Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample 有权
    测量薄膜样品的方法和装置以及制造薄膜样品的方法和装置

    公开(公告)号:US20080067384A1

    公开(公告)日:2008-03-20

    申请号:US11824994

    申请日:2007-07-02

    IPC分类号: G21K7/00

    摘要: In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

    摘要翻译: 在测量向薄膜样品照射电子束的薄膜样品的测量方法中,通过利用二次电子来检测产生的二次电子和测量薄膜样品的膜厚度,但是测量膜厚度 准确地说,即使当照射的电子束的当前量变化时,也能够在短时间内容易地进行。 照射电子束2b,并且通过二次电子检测器6检测所产生的二次电子4.由在膜厚测量区域检测到的二次电子量和在第二电子检测器处检测到的二次电子量构成的计算值 通过第一计算装置11计算参考区域。可以从标准薄膜样品的校准数据和由样品5计算的计算值来计算膜厚度测量区域的膜厚度。