Fusing device and image forming apparatus having the same
    175.
    发明授权
    Fusing device and image forming apparatus having the same 有权
    定影装置和具有该定影装置的图像形成装置

    公开(公告)号:US07881650B2

    公开(公告)日:2011-02-01

    申请号:US12036514

    申请日:2008-02-25

    CPC classification number: G03G15/2064 G03G2215/2035

    Abstract: A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.

    Abstract translation: 定影装置包括可旋转的加压辊,通过从可旋转的加压辊传递的旋转力而旋转的定影带,夹持形成构件,其与定影带的内表面接触,以在可旋转的压制 辊和定影带,形成在定影带的大致中心部分的加热构件,以加热夹持形成构件和定影带;形成在定影带内的内部支撑构件,以挤压辊隙形成构件的夹持部分 朝向可旋转的压辊,以及形成在定影带外部的外支撑构件,并且外支撑构件的两端与内支撑构件接合,从而增强内支撑构件的强度,并形成用于辐射热的路径 分散。 支撑单元包括放置在皮带单元内的内支撑构件和设置在皮带单元外部的外支撑构件,外支撑构件的两端与内支撑构件接合以增强内支撑构件的强度, 形成辐射热分散的路径。

    APPARATUS FOR PREVENTING OVER/UNDER VOLTAGE, LIGHT EMITTING MODULE, AND DISPLAY APPARATUS
    176.
    发明申请
    APPARATUS FOR PREVENTING OVER/UNDER VOLTAGE, LIGHT EMITTING MODULE, AND DISPLAY APPARATUS 有权
    用于防止/欠压,发光模块和显示设备的装置

    公开(公告)号:US20100309597A1

    公开(公告)日:2010-12-09

    申请号:US12724548

    申请日:2010-03-16

    CPC classification number: H02H1/0038 H02H3/207 H05B33/089 Y02B20/341

    Abstract: An apparatus for preventing abnormal voltage, a light emitting module, and a display apparatus are provided. The present apparatus for preventing abnormal voltage extracts the highest voltage and the lowest voltage among voltage applied from a plurality of loads, includes two voltage distribution units distributing the highest voltage and the lowest voltage, and detects whether the highest voltage and the lowest voltage applied from the voltage distribution unit are within a predetermined range. Accordingly, the apparatus for preventing abnormal voltage is not affected greatly in terms of its size and cost even if the number of loads to be protected increases.

    Abstract translation: 提供一种防止异常电压的装置,发光模块和显示装置。 用于防止异常电压的本装置提取从多个负载施加的电压中的最高电压和最低电压,包括分配最高电压和最低电压的两个电压分配单元,并且检测是否施加了最高电压和最低电压 电压分配单元在预定范围内。 因此,即使要保护的负载数量增加,用于防止异常电压的装置在其尺寸和成本方面也不会受到很大的影响。

    Nonvolatile memory device and fabrication method thereof
    178.
    发明授权
    Nonvolatile memory device and fabrication method thereof 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US07807478B2

    公开(公告)日:2010-10-05

    申请号:US12690831

    申请日:2010-01-20

    Applicant: Tae Hoon Kim

    Inventor: Tae Hoon Kim

    Abstract: A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device

    Abstract translation: 本发明的非易失性存储器件及其制造方法可以通过沿下电极的上边缘形成ReRAM的电阻层确定相位来确保器件设计过程期间的阈值驱动电压的余量,并且改善操作特性 的设备

    Wafer level package and method of manufacturing the same
    179.
    发明申请
    Wafer level package and method of manufacturing the same 审中-公开
    晶圆级封装及其制造方法

    公开(公告)号:US20100193940A1

    公开(公告)日:2010-08-05

    申请号:US12382907

    申请日:2009-03-26

    Abstract: The present invention relates to a wafer level package and a method of manufacturing the same. The wafer level package includes a first substrate including a first region and second regions with grooves around the first region; a semiconductor device positioned in the first region; first sealing members positioned in the grooves; a second substrate including projection units corresponding to the second regions in order to form a cavity corresponding to the first region; and second sealing members which are positioned above the projection units and laminate the first and second substrates to each other by being bonded to the first sealing members, and can prevent the sealing members from flowing to any region except for the sealing regions.

    Abstract translation: 本发明涉及一种晶片级封装及其制造方法。 晶片级封装包括包括第一区域的第一基板和围绕第一区域的凹槽的第二区域; 位于所述第一区域中的半导体器件; 位于凹槽中的第一密封构件; 第二基板,包括对应于第二区域的投影单元,以形成对应于第一区域的空腔; 以及第二密封构件,其位于投影单元的上方并且通过结合到第一密封构件将第一和第二基板彼此层合,并且可以防止密封构件流到除了密封区域之外的任何区域。

    Nonvolatile Memory Device and Fabrication Method Thereof
    180.
    发明申请
    Nonvolatile Memory Device and Fabrication Method Thereof 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US20100124810A1

    公开(公告)日:2010-05-20

    申请号:US12690831

    申请日:2010-01-20

    Applicant: Tae Hoon Kim

    Inventor: Tae Hoon Kim

    Abstract: A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device

    Abstract translation: 本发明的非易失性存储器件及其制造方法可以通过沿下电极的上边缘形成ReRAM的电阻层确定相位来确保器件设计过程期间的阈值驱动电压的余量,并且改善操作特性 的设备

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