公开(公告)号：US10916566B2

公开(公告)日：2021-02-09

申请号：US16674161

申请日：2019-11-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L33/42 ,  H01L29/66

Abstract: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

公开(公告)号：US10916430B2

公开(公告)日：2021-02-09

申请号：US15654110

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L21/285 ,  H01L23/485 ,  H01L21/28 ,  H01L27/108 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  C23F1/38

Abstract: A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.

公开(公告)号：US10910499B2

公开(公告)日：2021-02-02

申请号：US16783677

申请日：2020-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Satoshi Kobayashi

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

公开(公告)号：US10910408B2

公开(公告)日：2021-02-02

申请号：US16796130

申请日：2020-02-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1362

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

公开(公告)号：US10892367B2

公开(公告)日：2021-01-12

申请号：US16715430

申请日：2019-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/792 ,  H01L21/02 ,  H01L29/66 ,  H01L29/04 ,  H01L29/22 ,  H01L29/221

Abstract: A semiconductor device which includes a metal oxide film including a crystal part is provided. A semiconductor device which has a metal oxide film and high field-effect mobility is provided. A highly reliable semiconductor device including a metal oxide film is provided. The semiconductor device includes a first insulator, a first conductor formed over the first insulator, a second insulator formed over the first conductor, an oxide formed over the second insulator, a third insulator formed over the oxide, a second conductor formed over the third insulator, a fourth insulator formed over the third insulator and the second conductor, and a fifth insulator formed over the fourth insulator. The oxide contains In, M (M is Al, Ga, Y, or Sn), and Zn. The oxide includes a first crystal part and a second crystal part. The first crystal part has c-axis alignment. The second crystal part does not have c-axis alignment.

公开(公告)号：US10889888B2

公开(公告)日：2021-01-12

申请号：US15189104

申请日：2016-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC: C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  C04B35/01 ,  C04B35/453 ,  C04B35/64 ,  B28B11/24 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US10862065B2

公开(公告)日：2020-12-08

申请号：US16438881

申请日：2019-06-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu Hirakata ,  Shunpei Yamazaki

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H01L27/32 ,  H04M1/02

Abstract: To provide a method for manufacturing a lightweight light-emitting device having a light-emitting region on a curved surface. The light-emitting region is provided on a curved surface in such a manner that a light-emitting element is formed on a flexible substrate supported in a plate-like shape and the flexible substrate deforms or returns.

公开(公告)号：US10861401B2

公开(公告)日：2020-12-08

申请号：US16435618

申请日：2019-06-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata

IPC: G09G3/36 ,  G02F1/1335 ,  G02F1/1368

Abstract: To provide a liquid crystal display device which can perform image display in both modes: a reflective mode where external light is used as an illumination light source; and a transmissive mode where a backlight is used. In one pixel, a region where incident light through a liquid crystal layer is reflected to perform display (reflective region) and a region through which light from the backlight passes to perform display (transmissive region) are provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. In addition, two transistors connected to respective pixel electrode layers are provided in one pixel, and the two transistors are separately operated, whereby display of the reflective region and display of the transmissive region can be controlled independently.

公开(公告)号：US20200381459A1

公开(公告)日：2020-12-03

申请号：US16998032

申请日：2020-08-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

公开(公告)号：US10854642B2

公开(公告)日：2020-12-01

申请号：US16058479

申请日：2018-08-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Murakami ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L23/31 ,  H01L29/417 ,  H01L29/423 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/66 ,  H01L23/498 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1368

Abstract: A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.