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公开(公告)号：US09812544B2
公开(公告)日：2017-11-07
申请号：US14935553
申请日：2015-11-09
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号： H01L29/49 , H01L27/12 , H01L29/786 , H01L21/28 , H01L21/288 , H01L29/423 , H01L29/66
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
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2.发明授权公开(公告)号：US10889888B2
公开(公告)日：2021-01-12
申请号：US15189104
申请日：2016-06-22
发明人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
IPC分类号： C23C14/08 , C23C14/34 , C23C14/54 , C04B35/01 , C04B35/453 , C04B35/64 , B28B11/24 , H01L21/02 , H01L29/24 , H01L29/66 , H01L29/786
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
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公开(公告)号：US10522689B2
公开(公告)日：2019-12-31
申请号：US15605211
申请日：2017-05-25
发明人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC分类号： H01L29/786 , H01L29/66
摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
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公开(公告)号：US11959165B2
公开(公告)日：2024-04-16
申请号：US17228847
申请日：2021-04-13
发明人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
IPC分类号： C23C14/34 , B28B11/24 , C04B35/453 , C04B35/64 , C23C14/08 , H01L21/02 , H01L29/24 , H01L29/66 , H01L29/786
CPC分类号： C23C14/3414 , B28B11/243 , C04B35/453 , C04B35/64 , C23C14/08 , C23C14/086 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869 , C04B2235/3284 , C04B2235/3286 , C04B2235/76
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
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5.发明授权公开(公告)号：US11066739B2
公开(公告)日：2021-07-20
申请号：US16285297
申请日：2019-02-26
发明人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
IPC分类号： H01L21/02 , H01L29/24 , H01L29/66 , H01L29/786 , C23C14/34 , B28B11/24 , C04B35/64 , C04B35/453 , C23C14/08
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
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公开(公告)号：US09666720B2
公开(公告)日：2017-05-30
申请号：US14269819
申请日：2014-05-05
发明人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
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