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公开(公告)号：US09659977B2
公开(公告)日：2017-05-23
申请号：US15140837
申请日：2016-04-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Daisuke Kubota , Ryo Hatsumi , Masami Jintyou , Takumi Shigenobu , Naoto Goto
IPC: H01L27/12 , H01L29/417 , H01L29/786 , H01L29/45 , H01L49/02 , G02F1/133 , G02F1/1333 , G02F1/1335 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/1362 , G02F1/1368 , G06F3/041 , G06F3/044 , H01L29/24
CPC classification number: H01L27/1255 , G02F1/13306 , G02F1/133305 , G02F1/133345 , G02F1/13338 , G02F1/133512 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2001/133357 , G02F2001/13415 , G06F3/0412 , G06F3/044 , G06F2203/04108 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/127 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/45 , H01L29/78633 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.
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公开(公告)号：US09583601B2
公开(公告)日：2017-02-28
申请号：US15002826
申请日：2016-01-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Yasutaka Nakazawa , Masami Jintyou , Junichi Koezuka , Kenichi Okazaki , Takuya Hirohashi , Shunsuke Adachi
IPC: H01L29/786 , H01L29/66 , H01L21/3205 , H01L21/3213 , H01L21/473 , H01L21/4757
CPC classification number: H01L29/78696 , H01L21/32051 , H01L21/3213 , H01L21/473 , H01L21/4757 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: A method for manufacturing a semiconductor device including a transistor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer to form a stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes; and regions in the oxide layer in contact with the source and drain electrodes are heat treated so as to have a low resistivity.
Abstract translation: 提供一种制造包括具有稳定的电气特性或高可靠性的晶体管的半导体器件的方法。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 在氧化物半导体层上形成氧化物层，形成包含氧化物半导体层和氧化物层的层叠氧化膜; 堆叠层氧化膜被加工成预定的形状; 在堆叠层氧化膜上形成含有Ti的导电膜; 蚀刻导电膜以形成源极和漏极; 并且与源极和漏极接触的氧化物层中的区域被热处理以具有低电阻率。
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173.发明授权公开(公告)号：US09490268B2
公开(公告)日：2016-11-08
申请号：US15075765
申请日：2016-03-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hiroyuki Miyake , Takahiro Sato , Masami Jintyou
IPC: H01L29/04 , H01L29/786 , H01L27/12
CPC classification number: H01L27/1225 , G02F1/13306 , G02F1/133345 , G02F1/13338 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F2201/123 , G06F3/041 , G06F2203/04103 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/7869
Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.
Abstract translation: 提供了包括晶体管和连接部分的半导体器件。 晶体管包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜和与栅电极重叠的位置，电连接到氧化物半导体膜的源极和漏极; 连接部包括与形成有栅电极的表面相同的表面上的第一布线，与形成有源极和漏极的表面相同的表面上的第二布线，以及连接第一布线的第一布线 接线和第二个接线。 第二配线的上端部和下端部之间的距离比源电极和漏电极的上端部与下端部的距离长。
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公开(公告)号：US09356098B2
公开(公告)日：2016-05-31
申请号：US14574424
申请日：2014-12-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Junichi Koezuka , Masami Jintyou , Yukinori Shima , Takashi Hamochi , Yasutaka Nakazawa
IPC: H01L29/10 , H01L27/12 , H01L29/45 , H01L29/786
CPC classification number: H01L29/78606 , G02F1/133345 , G02F1/133512 , G02F1/133514 , G02F1/13394 , G02F1/1368 , H01L27/1225 , H01L27/1233 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/1033 , H01L29/45 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.
Abstract translation: 为了提供包括其中使用氧化物半导体的晶体管和导通电流高的半导体器件。 在包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管的半导体器件中，第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管，其中用作栅电极，源电极和漏电极的导电膜不重叠。 此外，在氧化物半导体膜中，在与栅电极，源电极和漏电极不重叠的区域中含有杂质元素。
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公开(公告)号：US09246133B2
公开(公告)日：2016-01-26
申请号：US14242993
申请日：2014-04-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Hisao Ikeda , Masataka Nakada , Masami Jintyou , Koji Ono
CPC classification number: H01L51/5271 , H01L27/3246 , H01L51/5218 , H01L2251/5315
Abstract: One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided.
Abstract translation: 本发明的一个实施例涉及一种包括绝缘表面的发光器件; 绝缘表面上的下电极; 绝缘表面上的突起具有朝向下电极倾斜的侧壁; 与所述下电极的端部和所述突起的侧壁重叠的透光分隔件; 以及包括下电极，与下电极重叠的上电极和在下电极和上电极之间含有发光有机化合物的层的发光元件。 在发光装置中，突起的侧壁能够反射从发光元件射出的光。 结果，提供了降低功耗的发光装置。
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Patent Agency Ranking
公开(公告)号：US09246011B2
公开(公告)日：2016-01-26
申请号：US14090244
申请日：2013-11-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Yasutaka Nakazawa , Masami Jintyou , Junichi Koezuka , Kenichi Okazaki , Takuya Hirohashi , Shunsuke Adachi
IPC: H01L29/12 , H01L29/786 , H01L29/66
CPC classification number: H01L29/78696 , H01L21/32051 , H01L21/3213 , H01L21/473 , H01L21/4757 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
Abstract translation: 提供一种半导体器件，其包括具有稳定的电特性或高可靠性的氧化物半导体的沟道形成区中具有减少的氧空位数的晶体管。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 通过溅射法在氧化物半导体层上形成氧化物层，以形成包含氧化物半导体层和氧化物层的堆叠层氧化膜; 堆叠层氧化膜被加工成预定的形状; 在叠层氧化膜上形成含有Ti作为主要成分的导电膜; 蚀刻导电膜以形成源极和漏极以及背沟道侧的凹陷部; 并且与源极和漏极接触的堆叠层氧化膜的部分通过热处理而变为n型。
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公开(公告)号：US09246009B2
公开(公告)日：2016-01-26
申请号：US14684774
申请日：2015-04-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiaki Oikawa , Masayuki Kajiwara , Masataka Nakada , Masami Jintyou , Shunpei Yamazaki
IPC: H01L23/31 , H01L29/06 , H01L29/786 , H01L21/56 , H01L27/12
CPC classification number: H01L27/1266 , H01L21/568 , H01L23/3107 , H01L23/3114 , H01L27/1214 , H01L29/78606 , H01L29/78666 , H01L29/78669 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
Abstract: An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.
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公开(公告)号：US09230996B2
公开(公告)日：2016-01-05
申请号：US14580949
申请日：2014-12-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki Miyake , Junichi Koezuka , Masami Jintyou , Yukinori Shima , Shunpei Yamazaki
CPC classification number: H01L27/1225 , H01L27/1237 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3262 , H01L29/24 , H01L29/7869
Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.
Abstract translation: 提供能够抑制像素之间的亮度变化的发光装置。 发光装置包括像素和第一和第二电路。 第一电路具有产生包括从像素提取的电流值的信号的功能。 第二电路具有通过该信号校正图像信号的功能。 像素至少包括发光元件和第一和第二晶体管。 第一晶体管具有通过图像信号控制向发光元件的电流的供给的功能。 第二晶体管具有控制从像素提取电流的功能。 第一和第二晶体管中的每一个的半导体膜包括与栅极重叠的第一半导体区域，与源极或漏极接触的第二半导体区域以及第一和第二半导体区域之间的第三半导体区域。
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公开(公告)号：US20150155313A1
公开(公告)日：2015-06-04
申请号：US14546443
申请日：2014-11-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Junichi Koezuka , Yukinori Shima , Masami Jintyou , Takashi Hamochi , Satoshi Higano , Yasuharu Hosaka , Toshimitsu Obonai
IPC: H01L27/12 , H01L29/786 , H01L49/02
CPC classification number: H01L27/1255 , H01L28/20 , H01L28/24 , H01L28/60 , H01L29/45 , H01L29/7869 , H01L29/78693
Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).
Abstract translation: 提供了一种新颖的半导体器件，其中在包括氧化物半导体膜的晶体管中使用含有铜（Cu）的金属膜用于布线，信号线等。 半导体器件包括在绝缘表面上具有导电性的氧化物半导体膜和与具有导电性的氧化物半导体膜接触的导电膜。 导电膜包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。
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公开(公告)号：US20140306201A1
公开(公告)日：2014-10-16
申请号：US14242993
申请日：2014-04-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Hisao Ikeda , Masataka Nakada , Masami Jintyou , Koji Ono
CPC classification number: H01L51/5271 , H01L27/3246 , H01L51/5218 , H01L2251/5315
Abstract: One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided.
Abstract translation: 本发明的一个实施例涉及一种包括绝缘表面的发光器件; 绝缘表面上的下电极; 绝缘表面上的突起具有朝向下电极倾斜的侧壁; 与所述下电极的端部和所述突起的侧壁重叠的透光分隔件; 以及包括下电极，与下电极重叠的上电极和在下电极和上电极之间含有发光有机化合物的层的发光元件。 在发光装置中，突起的侧壁能够反射从发光元件射出的光。 结果，提供了降低功耗的发光装置。
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