公开(公告)号：US07084028B2

公开(公告)日：2006-08-01

申请号：US10636750

申请日：2003-08-08

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： H01L21/8242 ,  H01L29/94

CPC分类号： H01L29/7841 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10844 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1203

摘要： A semiconductor device comprises a semiconductor substrate having a cavity region inside; a first insulation film formed on the inner wall of the cavity region; a first electrode formed on the inner wall of the first insulation film in the cavity region, and having a hollow cavity inside; a semiconductor region overlying the cavity region and including first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type which are adjacent to each other, said semiconductor region having a bottom surface on which the first electrode is formed via the first insulation film; a second insulation film covering the top surface of the semiconductor region; and a second electrode formed on the semiconductor region via the second insulation film and electrically insulated from the semiconductor region and the first electrode.

摘要翻译： 半导体器件包括其内部具有空腔区域的半导体衬底; 形成在所述腔区域的内壁上的第一绝缘膜; 第一电极，形成在空腔区域中的第一绝缘膜的内壁上，并且在其内部具有中空腔; 覆盖所述空腔区域并且包括彼此相邻的第一导电类型的第一半导体区域和第二导电类型的第二半导体区域的半导体区域，所述半导体区域具有经由所述第一导电类型形成所述第一电极的底表面 绝缘膜; 覆盖半导体区域的顶表面的第二绝缘膜; 以及经由所述第二绝缘膜形成在所述半导体区域上并与所述半导体区域和所述第一电极电绝缘的第二电极。

公开(公告)号：US06980464B2

公开(公告)日：2005-12-27

申请号：US10310022

申请日：2002-12-05

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/16

摘要： An MRAM includes a magneto resistive element, which has a record layer and a reference layer disposed to sandwich a tunnel barrier film and is configured to store data in the record layer. An electric current drive line is disposed to selectively apply a magnetic field to the magneto resistive element. The record layer has a first ferromagnetic layer while the reference layer has a second ferromagnetic layer. Retentivity of retaining a magnetization direction of the second ferromagnetic layer is smaller than retentivity of retaining a magnetization direction of the first ferromagnetic layer, against a magnetic field applied to the magneto resistive element by the electric current drive line.

摘要翻译： MRAM包括磁阻元件，其具有设置成夹持隧道势垒膜的记录层和参考层，并被配置为将数据存储在记录层中。 设置电流驱动线以选择性地向磁阻元件施加磁场。 记录层具有第一铁磁层，而参考层具有第二铁磁层。 保持第二铁磁层的磁化方向的保持力小于通过电流驱动线施加到磁电阻元件的磁场而保持第一铁磁层的磁化方向的保持性。

公开(公告)号：US20050185459A1

公开(公告)日：2005-08-25

申请号：US11109675

申请日：2005-04-20

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： H01L27/105 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  G11C11/15

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： A semiconductor memory device includes a memory cell, a side wall insulating film, and an interlayer insulating film. A memory cell includes a first ferromagnetic film, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film. The side wall insulating film is formed so as to surround at least sides of the second ferromagnetic film. The interlayer insulating film is formed so as to cover the memory cell and the side wall insulating film.

摘要翻译： 半导体存储器件包括存储单元，侧壁绝缘膜和层间绝缘膜。 存储单元包括形成在第一铁磁膜上的第一铁磁膜，隧道阻挡膜和形成在隧道势垒膜上的第二铁磁膜。 侧壁绝缘膜形成为围绕第二铁磁性膜的至少一侧。 层间绝缘膜形成为覆盖存储单元和侧壁绝缘膜。

公开(公告)号：US06882564B2

公开(公告)日：2005-04-19

申请号：US10359151

申请日：2003-02-06

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/10 ,  H01L43/08 ,  G11C7/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/08

摘要： A magnetic memory device includes first and second magnetoresistance elements. The first and second magnetoresistance elements store information and are provided apart from each other in a first direction. A first wiring to apply a magnetic field to the first and second magnetoresistance elements is provided along the first direction. A first magnetic circuit is formed along a side of the first wiring and has a notch in its portion between the first and second magnetoresistance elements.

摘要翻译： 磁存储器件包括第一和第二磁阻元件。 第一和第二磁阻元件存储信息并且在第一方向彼此分开地设置。 沿着第一方向设置用于向第一和第二磁阻元件施加磁场的第一布线。 第一磁路沿着第一布线的一侧形成，并且在其第一和第二磁阻元件之间的部分具有凹口。

公开(公告)号：US20050023696A1

公开(公告)日：2005-02-03

申请号：US10927079

申请日：2004-08-27

申请人： Hiroyuki Nitta ,  Yoshiaki Fukuzumi ,  Yusuke Kohyama

发明人： Hiroyuki Nitta ,  Yoshiaki Fukuzumi ,  Yusuke Kohyama

IPC分类号： H01L21/3213 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L23/532 ,  H01L27/108 ,  H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/32134 ,  H01L21/7682 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/5329 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L2924/0002 ,  Y10S438/927 ,  H01L2924/00

摘要： In a semiconductor device, a wiring pattern groove is formed in a surface portion of a silicon oxide film provided above a semiconductor substrate. A wiring layer is buried into the wiring pattern groove with a barrier metal film interposed therebetween. The barrier metal film is selectively removed from each sidewall portion of the wiring pattern groove. In other words, the barrier metal film is left only on the bottom of the wiring pattern groove. Thus, a damascene wiring layer having a hollow section whose dielectric constant is low between each sidewall of the wiring pattern groove and each side of the wiring layer can be formed in the semiconductor device.

公开(公告)号：US20050007819A1

公开(公告)日：2005-01-13

申请号：US10915511

申请日：2004-08-10

申请人： Yoshiaki Fukuzumi

发明人： Yoshiaki Fukuzumi

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C11/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08

摘要： A magnetic memory device includes a magnetoresistance configured to store information. A first wiring is provided along a first direction. The first wiring has a function of applying a magnetic field to the magnetoresistance element. The first wiring has a first surface and a second surface. The second surface faces the magnetoresistance element and the first surface is opposite to it. The second surface is smaller in width than the first surface.

摘要翻译： 磁存储器件包括被配置为存储信息的磁阻。 沿着第一方向设置第一布线。 第一布线具有向磁阻元件施加磁场的功能。 第一布线具有第一表面和第二表面。 第二表面面对磁阻元件，第一表面与其相对。 第二表面的宽度小于第一表面。

公开(公告)号：US06593180B1

公开(公告)日：2003-07-15

申请号：US09708044

申请日：2000-11-08

申请人： Jun Lin ,  Yoshiaki Fukuzumi

发明人： Jun Lin ,  Yoshiaki Fukuzumi

IPC分类号： H01L218242

CPC分类号： H01L27/11502 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A method of manufacturing semiconductor device comprises the step of forming the transistor in the semiconductor substrate, the step of forming the capacitor conducting to the transistor, and the step of forming the insulating film to cover the transistor and the capacitor; and the step of sintering the semiconductor substrate in an atmosphere including the mixture of hydrogen, nitrogen and oxygen gases.

摘要翻译： 制造半导体器件的方法包括在半导体衬底中形成晶体管的步骤，形成对晶体管导通的电容器的步骤以及形成绝缘膜以覆盖晶体管和电容器的步骤; 以及在包括氢，氮和氧气的混合气体的气氛中烧结半导体衬底的步骤。

公开(公告)号：US08624316B2

公开(公告)日：2014-01-07

申请号：US13227882

申请日：2011-09-08

申请人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

发明人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

IPC分类号： H01L29/792

CPC分类号： H01L21/28282 ,  H01L27/11582 ,  H01L29/42352

摘要： According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.

摘要翻译： 根据一个实施例，一种半导体器件，包括衬底，在衬底上方设置的层叠体，堆叠层体彼此交替堆叠绝缘体和电极膜，含有氟的硅柱，穿透硅柱的硅柱， 设置在堆叠层体上的隧道绝缘体，设置在与层叠体主体相对的硅柱的表面上的隧道绝缘体，设置在隧道绝缘体的面向堆叠层主体的表面上的电荷存储层， 面向堆叠层体的电荷存储层的表面，块绝缘体与电极膜接触，以及设置在硅柱中的嵌入部。

公开(公告)号：US20130242670A1

公开(公告)日：2013-09-19

申请号：US13601539

申请日：2012-08-31

申请人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

发明人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

IPC分类号： H01L29/788 ,  G11C16/04

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  G11C16/0416 ,  G11C16/0483 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7881

摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

摘要翻译： 非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极 电极形成在第二绝缘膜上。 在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

公开(公告)号：US08415242B2

公开(公告)日：2013-04-09

申请号：US12886135

申请日：2010-09-20

申请人： Ichiro Mizushima ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

发明人： Ichiro Mizushima ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

IPC分类号： H01L21/3205

CPC分类号： H01L29/792 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.