公开(公告)号：US10297331B2

公开(公告)日：2019-05-21

申请号：US15333723

申请日：2016-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G11C19/00 ,  G11C19/28 ,  H01L27/12 ,  H01L29/786 ,  G09G3/36

Abstract: A highly reliable semiconductor device is provided. A semiconductor device includes a shift register including a pulse output circuit formed using transistors having the same conductivity type, or the like. A transistor including a back gate is used as a transistor in which a potential difference between a source and a drain is not generated and positive stress is applied to a gate in a non-selection period of the pulse output circuit. In the non-selection period, stress applied to the transistors is reduced by interchanging the potentials of the gates and those of the back gates.

公开(公告)号：US10249876B2

公开(公告)日：2019-04-02

申请号：US15874123

申请日：2018-01-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Tatsuya Ikenuma ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Mako Motoyoshi ,  Hiroyuki Miyake ,  Yohei Momma ,  Takuya Hirohashi ,  Satoshi Seo

IPC: H01M4/505 ,  H01M4/485 ,  H01M4/48 ,  H01M4/62 ,  H01M4/583 ,  G06F1/16 ,  G04G21/00 ,  G04C10/00 ,  H01M4/36 ,  H01M4/525 ,  H01M10/052

Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with unproved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.

公开(公告)号：US10236305B2

公开(公告)日：2019-03-19

申请号：US15677125

申请日：2017-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

公开(公告)号：US10074747B2

公开(公告)日：2018-09-11

申请号：US15372493

申请日：2016-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/78 ,  H01L29/786 ,  H01L23/66 ,  H01L29/24 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8236 ,  G06K19/077 ,  G11C7/00 ,  G11C19/28 ,  H02M3/07

CPC classification number: H01L29/78609 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US10048558B2

公开(公告)日：2018-08-14

申请号：US15450099

申请日：2017-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki ,  Hiroyuki Miyake

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3275 ,  G09G3/34 ,  G09G3/36 ,  H01L29/423 ,  H01L27/15 ,  H01L27/32

Abstract: An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed.

公开(公告)号：US10008167B2

公开(公告)日：2018-06-26

申请号：US15053557

申请日：2016-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Yoshiharu Hirakata

IPC: G09G3/36 ,  G09G3/34

CPC classification number: G09G3/3648 ,  G09G3/3406 ,  G09G2320/0686 ,  G09G2354/00

Abstract: To reduce eye fatigue of a user and perform eye-friendly display. An information processing device provided with a display portion and an input portion has a first mode in which the contrast or the brightness of a displayed image is adjusted and a second mode in which the contrast or the brightness of a displayed image is set to the initial set value. In the case where an image is displayed and a signal such as a scroll instruction is input to the input portion, the contrast or the brightness of the displayed image is adjusted depending on the content of the scroll instruction; thus, the information processing device can perform eye-friendly display.

公开(公告)号：US09911757B2

公开(公告)日：2018-03-06

申请号：US15386649

申请日：2016-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Yukinori Shima

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/005

Abstract: Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film. The second transistor comprises a first drain electrode; the second insulating film over the second drain electrode; a second oxide semiconductor film over the second insulating film; a second source electrode and a second drain electrode over the second oxide semiconductor film; a third insulating film over the second oxide semiconductor film, the second source electrode, and the second drain electrode; and a third gate electrode over the third insulating film. The first oxide semiconductor film partly overlaps with the second oxide semiconductor film.

公开(公告)号：US09870106B2

公开(公告)日：2018-01-16

申请号：US14643285

申请日：2015-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G06F3/044 ,  G06F3/042 ,  G06F3/041

CPC classification number: G06F3/044 ,  G06F3/0412 ,  G06F3/042 ,  G06F2203/04106

Abstract: A novel input device that is highly convenient or reliable or a novel input/output device that is highly convenient or reliable. The following structure is contemplated. The input device includes sensor units that are arranged in a matrix and each include a window portion which transmits visible light, a light-transmitting first sensing element which includes an insulating layer and a pair of electrodes between which the insulating layer is interposed and overlaps with the window portion, a second sensing element which includes a photoelectric conversion element and does not overlap with the window portion, and a sensing circuit which supplies a sensing signal on the basis of a change in the parasitic capacitance of the first sensing element or on the basis of the current flowing through the second sensing element; and a base layer supporting the sensor units.

公开(公告)号：US09852708B2

公开(公告)日：2017-12-26

申请号：US15433629

申请日：2017-02-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki Miyake

IPC: G06F3/038 ,  G09G3/36 ,  G11C19/28 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343

CPC classification number: G09G3/3677 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G09G2300/0814 ,  G09G2310/0286 ,  G09G2310/06 ,  G09G2310/08 ,  G09G2320/0223 ,  G09G2330/021 ,  G11C19/28 ,  G11C19/287

Abstract: A scan line to which a selection signal or a non-selection signal is input from its end, and a transistor in which a clock signal is input to a gate, the non-selection signal is input to a source, and a drain is connected to the scan line are provided. A signal input to the end of the scan line is switched from the selection signal to the non-selection signal at the same or substantially the same time as the transistor is turned on. The non-selection signal is input not only from one end but also from both ends of the scan line. This makes it possible to inhibit the potentials of portions in the scan line from being changed at different times.

公开(公告)号：US09847380B2

公开(公告)日：2017-12-19

申请号：US14551955

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Hiroyuki Miyake

IPC: G06F3/041 ,  H01L27/32 ,  H01L51/50 ,  H01L51/00 ,  H01L51/10

CPC classification number: H01L27/323 ,  G06F1/1652 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01L27/322 ,  H01L51/0097 ,  H01L51/107

Abstract: A flexible touch panel is provided. Both reduction in thickness and high sensitivity of a touch panel are achieved. The touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over the light-emitting element, a pair of sensor electrodes over the color filter, a second insulating layer over the sensor electrodes, a second flexible substrate over the second insulating layer, and a protective layer over the second substrate. A first bonding layer is between the light-emitting element and the color filter. The thickness of the first substrate and the second substrate is each 1 μm to 200 μm inclusive. The first bonding layer includes a region with a thickness of 50 nm to 10 μm inclusive.