公开(公告)号：US5744293A

公开(公告)日：1998-04-28

申请号：US821412

申请日：1997-03-21

申请人： Katsuya Okumura ,  Tsuyoshi Shibata

发明人： Katsuya Okumura ,  Tsuyoshi Shibata

IPC分类号： G02B1/11 ,  G03F7/09 ,  H01L21/027 ,  G03F7/11 ,  G03C1/825

CPC分类号： G03F7/091

摘要： This invention relates to an antireflective layer (ARL) which has both good absorption capability and low reflectivity at the photoresist/ARL interface. The ARL also significantly reduces CD variation in exposed photoresist film. The ARL of the present invention comprises an organic base resin having fine carbon particles dispersed therein. The combination of the organic base resin and fine carbon particles provide both good absorption and low reflectivity. The present invention is also related to a process of forming a semiconductor by applying an antireflection layer to the surface of a substrate, forming a photoresist layer on the antireflection layer, and selectively exposing the substrate to ultraviolet light, wherein the antireflective layer is an organic resin having carbon particles dispersed therein.

摘要翻译： 本发明涉及在光致抗蚀剂/ ARL界面处具有良好吸收能力和低反射率的抗反射层（ARL）。 ARL还显着降低了曝光光刻胶膜中的CD变化。 本发明的ARL包含分散有细小碳粒子的有机基础树脂。 有机基础树脂和细小颗粒的组合提供良好的吸收和低反射率。 本发明还涉及通过在基板的表面上施加抗反射层来形成半导体的方法，在抗反射层上形成光致抗蚀剂层，并且将基板选择性地暴露于紫外光，其中抗反射层是有机的 具有分散在其中的碳粒子的树脂。

公开(公告)号：US5724144A

公开(公告)日：1998-03-03

申请号：US674855

申请日：1996-07-03

申请人： Karl Paul Ludwig Muller ,  Katsuya Okumura ,  Theodore G. Van Kessel

发明人： Karl Paul Ludwig Muller ,  Katsuya Okumura ,  Theodore G. Van Kessel

IPC分类号： G01B11/06 ,  H01L21/304 ,  H01L21/66

CPC分类号： G01B11/0683

摘要： The processing of a semiconductor body front side surface can be monitored in-situ, and thickness data for a body can be obtained ex-situ, by directing an infrared beam at the back side surface of the body. The light is reflected from front and back sides of a body portion to form primary and secondary reflections which are detected. An interference signal representative of interference fringes of the primary and secondary reflections is generated, and thickness data for the body or a body portion is calculated from the interference signal. In-situ monitoring of processes such as mechanical-chemical polishing, chemical vapor deposition, and plasma or reactive ion etching is achieved by providing a light passageway through a semiconductor body support such as a chuck or electrode, e.g., a cathode. In this manner, the process monitoring does not hinder, and is not hindered by, the processing steps and equipment.

摘要翻译： 半导体本体侧表面的处理可以原位监测，通过将红外光束引导到身体的背面，可以非原位地获得身体的厚度数据。 光从身体部分的前侧和后侧反射以形成检测到的主反射和次级反射。 产生表示初级和次级反射的干涉条纹的干涉信号，并且根据干扰信号计算身体或身体部分的厚度数据。 通过提供通过诸如卡盘或电极例如阴极的半导体主体支撑件的光通道来实现诸如机械 - 化学抛光，化学气相沉积和等离子体或反应离子蚀刻的工艺的原位监测。 以这种方式，过程监控不妨碍加工步骤和设备的阻碍。

公开(公告)号：US5679610A

公开(公告)日：1997-10-21

申请号：US356541

申请日：1994-12-15

申请人： Tetsuo Matsuda ,  Katsuya Okumura

发明人： Tetsuo Matsuda ,  Katsuya Okumura

IPC分类号： H01L21/3205 ,  H01L21/3105 ,  H01L21/31

CPC分类号： H01L21/31051

摘要： The present invention relates to a simple, low cost planarization technique whereby physical pressure is used to planarize the surface of a semiconductor device. The method of the present invention planarizes a semiconductor workpiece surface and results in an increase in the productivity of the processing steps that follow. In effect, the present invention applies physical pressure to flatten the surface layers of a semiconductor workpiece. The present invention is particularly adapted for use in planarizing surface layers made of plastic materials.

摘要翻译： 本发明涉及一种简单的低成本平面化技术，其中使用物理压力来平坦化半导体器件的表面。 本发明的方法对半导体工件表面进行了平面化，并导致随后的加工步骤的生产率的提高。 实际上，本发明应用物理压力来平坦化半导体工件的表面层。 本发明特别适用于平坦化由塑料材料制成的表面层。

公开(公告)号：US5679484A

公开(公告)日：1997-10-21

申请号：US757957

申请日：1996-11-25

申请人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

发明人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/26

摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask. The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant. Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.

公开(公告)号：US5639308A

公开(公告)日：1997-06-17

申请号：US552673

申请日：1995-11-03

申请人： Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

发明人： Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

IPC分类号： C23F4/00 ,  C23F4/02 ,  H01J27/18 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/24 ,  C23C16/48 ,  C23F1/02 ,  H01J27/20 ,  H05H1/16

CPC分类号： H01J27/18 ,  H01J37/3233 ,  H01J37/32623 ,  H01J37/3266 ,  H05H1/24

摘要： A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.

摘要翻译： 等离子体装置通过将电子束引入填充有用于用引入的电子束照射反应性气体的反应气体的处理室来产生等离子体，以通过产生的等离子体处理物质。 等离子体装置具有用于安装待处理物质的样品基底，使得物质的处理表面不指向与引入处理室的电子束的行进方向垂直的方向; 用于抑制引入到处理室中的电子束的发散的抑制部分; 以及用于控制发散抑制电子束的电流密度分布的控制部分，使得包含在等离子体中的离子的电流密度分布能够对被处理物质均匀化。

公开(公告)号：US5552628A

公开(公告)日：1996-09-03

申请号：US389563

申请日：1995-02-16

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58 ,  H01L23/48

CPC分类号： H01L23/53271 ,  H01L21/316 ,  H01L21/76819 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device of the present invention comprises a silicon substrate, a silicon oxide layer formed on the silicon substrate, first aluminum wires formed on the silicon oxide layer, a CVD SiO.sub.2 layer covering at least the first aluminum wires, and an inorganic oxide precipitated from a liquid-phase material, the inorganic oxide filling at least a gap between the first aluminum wires.

摘要翻译： 本发明的半导体器件包括硅衬底，形成在硅衬底上的氧化硅层，形成在氧化硅层上的第一铝线，至少覆盖第一铝线的CVD SiO 2层和从 液相材料，无机氧化物至少填充第一铝线之间的间隙。

公开(公告)号：US5548183A

公开(公告)日：1996-08-20

申请号：US364747

申请日：1994-12-27

申请人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

发明人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

IPC分类号： H01J37/143 ,  H01J37/06 ,  H01J37/065 ,  H01J37/073 ,  H01J37/18 ,  H01J41/12 ,  H01J41/18 ,  H01J3/20

CPC分类号： H01J37/065 ,  H01J37/18 ,  H01J41/18

摘要： In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical permanent magnets (57, 58) disposed coaxially with an optical axis (52) of the electron gun (51) in such a way as to sandwich a cylindrical ion pump anode (61) of the coaxial ion pump; the two permanent magnets are magnetized in a mutually opposing direction; a hollow cylindrical yoke (60) is disposed also coaxially with the optical axis (52) in such a way as to enclose the two permanent magnets (57, 58) within a hollow portion thereof; and the yoke (60) is formed with an annular yoke gap (63) in a radially inner circumferential surface of the yoke (60) to leak out a magnetic flux flowing through the yoke toward the optical axis. In the above-mentioned construction, the magnetic field lens can be formed efficiently with the use of the magnetic field generated by the permanent magnets for constituting the coaxial ion pump, and further the formed magnetic field lens can be superimposed upon the electron gun. Therefore, an electric field immersion type electron gun of high performance can be obtained, and further the electron gun chamber can be efficiently evacuated in the vicinity of the cathode tip of the electron gun.

摘要翻译： 在使用电镜（56）和同轴离子泵的永磁体（57,58）形成的磁场透镜的电磁枪（51）发射的电子束的磁场浸渍型电子枪中， （53）中，离子泵磁体是与电子枪（51）的光轴（52）同轴配置的一对筒状的永久磁铁（57,58），夹着圆筒状离子泵阳极 ）的同轴离子泵; 两个永磁体在相互相反的方向被磁化; 中空圆柱形磁轭（60）还与光轴（52）同轴设置，以便将两个永磁体（57,58）包围在其中空部分内; 并且轭（60）在轭（60）的径向内周面上形成有环形磁轭间隙（63），以使流过磁轭的磁通向光轴泄漏。 在上述结构中，可以通过使用由用于构成同轴离子泵的永久磁铁产生的磁场来有效地形成磁场透镜，并且还可以将形成的磁场透镜叠加在电子枪上。 因此，可以获得高性能的电场浸没型电子枪，并且可以在电子枪的阴极尖端附近有效地排出电子枪室。

公开(公告)号：US5491425A

公开(公告)日：1996-02-13

申请号：US215774

申请日：1994-03-22

申请人： Toru Watanabe ,  Yuri Yonekura ,  Katsuya Okumura

发明人： Toru Watanabe ,  Yuri Yonekura ,  Katsuya Okumura

IPC分类号： G01R1/073 ,  G01R1/067 ,  G01R31/26 ,  H01L21/66 ,  G01R1/06

CPC分类号： G01R1/06783

摘要： A probe is attached to a support plate vertically to the surface of the support plate. A drop of a molten metal is formed at a tip portion of the probe. The support plate has a heater for setting the temperature of the probe and the drop of the molten metal at the tip portion of the probe. The probe is situated at a position corresponding to a position of an electrode of an LSI. The probe is connected to a measuring device for evaluating characteristics of the LSI by wiring. The drop of the molten metal connects the probe and the electrode of the LSI electrically.

摘要翻译： 探针垂直于支撑板的表面附接到支撑板。 在探针的尖端处形成一滴熔融金属。 支撑板具有用于将探针的温度和熔融金属的液滴设置在探针的尖端部分的加热器。 探针位于与LSI的电极的位置对应的位置。 探头连接到用于通过布线评估LSI的特性的测量装置。 熔融金属液滴将探针和LSI的电极电连接。

公开(公告)号：US5483568A

公开(公告)日：1996-01-09

申请号：US335384

申请日：1994-11-03

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： B24B37/005 ,  H01L21/304 ,  H01L21/321 ,  H01L21/66 ,  H01L21/306

CPC分类号： B24B37/005 ,  H01L21/3212

摘要： The invention is directed to a method for detecting the chemical mechanical polishing rate of a surface of a semi-conductor wafer. In chemical mechanical polishing, a slurry made of abrasive particles suspended in a chemically abrasive liquid is dispensed on the surface of a rotating polishing pad. The wafer to be polished is rotated and lowered into contact with the rotating polishing pad. The method includes directing an X-ray beam at an exposed surface area of the polishing pad, and detecting the intensity of the X-ray fluorescence which results from the beam illuminating the pad. Since both the CMP rate of removal of a wafer surface and the intensity of the X-ray fluorescence are functions of the density of the abrasive particles in the slurry, the CMP rate of removal can be expressed as a function of the density. Accordingly, the detected intensity of the X-ray fluorescence can be converted directly into the CMP rate, without interfering with the CMP process.

摘要翻译： 本发明涉及一种用于检测半导体晶片的表面的化学机械抛光速率的方法。 在化学机械抛光中，将悬浮在化学研磨液体中的磨料颗粒制成的浆料分配在旋转抛光垫的表面上。 要抛光的晶片被旋转和降低以与旋转的抛光垫接触。 该方法包括将X射线束引导到抛光垫的暴露表面区域，并且检测由照射衬垫的束产生的X射线荧光的强度。 由于晶片表面的CMP去除速度和X射线荧光强度都是浆料中磨料颗粒的密度的函数，所以CMP的除去速度可以表示为密度函数。 因此，可以将检测出的X射线荧光强度直接转换成CMP速率，而不会影响CMP工艺。

公开(公告)号：US5474643A

公开(公告)日：1995-12-12

申请号：US169551

申请日：1993-12-20

申请人： Junichi Arami ,  Tamio Endo ,  Shiro Koyama ,  Kazuo Kikuchi ,  Teruaki Shiraishi ,  Isahiro Hasegawa ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura

发明人： Junichi Arami ,  Tamio Endo ,  Shiro Koyama ,  Kazuo Kikuchi ,  Teruaki Shiraishi ,  Isahiro Hasegawa ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura

IPC分类号： H01J37/32 ,  H05H1/00 ,  H05H11/00

CPC分类号： H01J37/32431 ,  H01J2237/16

摘要： A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generating plasma in the process chamber. The process chamber is defined by the peripheral wall having a circular cross section. Members forming parts of the peripheral wall each have an inner face continuous with the surface of the peripheral wall and curved substantially at the same radius of curvature as the surface of the peripheral wall.

摘要翻译： 等离子体处理装置具有用于接收被处理物的处理室，形成处理室的周壁的一部分的监视窗口，压力输出端口，栅极和用于形成电场的等离子体产生装置， 在处理室中产生等离子体。 处理室由具有圆形横截面的周壁限定。 形成周壁的部件的部件各自具有与周壁的表面连续的内表面，并且基本上以与周壁的表面相同的曲率半径弯曲。