公开(公告)号：US5010249A

公开(公告)日：1991-04-23

申请号：US406458

申请日：1989-09-13

Applicant: Akira Nishikawa

Inventor： Akira Nishikawa

IPC: G01B7/34 ,  G01N23/00 ,  G01Q60/16 ,  G01Q70/14 ,  H01J1/304 ,  H01J9/02

CPC classification number: G01Q70/16 ,  B82Y35/00 ,  G01Q70/14 ,  H01J9/025 ,  H01J2201/30457

Abstract: The present invention provides a method of manufacturing a probe having an extremely hard and acute tip, which involves the steps of precipitating a carbon film mixed with a columnar diamond crystal and an amorphous carbonic component at a tip of a probe material; and protruding the columnar diamond crystal by selectively etching the amorphous carbonic component. According to the present invention, it is possible to improve a resolving power of the analyzing device and probe durability as well.

Abstract translation: 本发明提供一种制造具有极硬尖锐尖端的探针的方法，其包括在探针材料的尖端沉淀与柱状金刚石晶体和无定形碳质成分混合的碳膜的步骤; 并通过选择性地蚀刻无定形碳质成分来突出柱状金刚石晶体。 根据本发明，也可以提高分析装置的分辨率和探针耐久性。

公开(公告)号：US4916002A

公开(公告)日：1990-04-10

申请号：US297059

申请日：1989-01-13

Applicant: Thomas E. Carver

Inventor： Thomas E. Carver

IPC: B81C1/00 ,  C23C16/04 ,  G01Q60/10 ,  G01Q60/24 ,  G01Q70/14 ,  G01Q70/16 ,  H01J9/02

CPC classification number: G01Q70/14 ,  B82Y35/00 ,  C23C16/04 ,  G01Q70/16 ,  H01J9/025 ,  H01L21/30608 ,  H01J2201/30457 ,  Y10S977/878 ,  Y10S977/879 ,  Y10T428/12486 ,  Y10T428/12611 ,  Y10T428/24339 ,  Y10T428/24917

Abstract: A microminiature tip and tip assembly is fabricated using microelectronic fabrication techniques. A masking aperture is formed in a dielectric layer which overlies a (100) silicon substrate. For a square aperture, a pyramidal pit is anisotropically etched into the surface of the silicon substrate. Tungsten is selectively deposited in the pit to form a pyramid-shaped microminiature point. Continued deposition of tungsten fills the aperture to form a base portion of the tip which integrally locks the tip to the dielectric layer, which is fabricated to form a support member for the tip.

Abstract translation: 使用微电子制造技术制造微型尖端和尖端组件。 在覆盖（100）硅衬底的电介质层中形成掩蔽孔。 对于方孔，将金字塔形凹坑各向异性地蚀刻到硅衬底的表面中。 钨选择性地沉积在凹坑中以形成棱锥形的微型点。 钨的继续沉积填充孔以形成尖端的基部，该尖端的一部分将尖端一体地锁定到电介质层，该电介质层制造成形成用于尖端的支撑构件。

公开(公告)号：US4084942A

公开(公告)日：1978-04-18

申请号：US608260

申请日：1975-08-27

Applicant: Humberto Fernandez-Moran Villalobos

Inventor： Humberto Fernandez-Moran Villalobos

IPC: B24D18/00 ,  B24D3/04 ,  B24D3/08

CPC classification number: B82Y10/00 ,  B01J2203/061 ,  B01J2203/0655 ,  H01J2201/30457 ,  Y10S505/825 ,  Y10T83/929

Abstract: Ultrasharp diamond edges and points which are usable as cutting instruments and as high intensity point sources for the emission of electrons, ions, x-rays, coherent and incoherent light and high frequency electromagnetic radiation are produced by preparing and classifying ultrafine diamond powder having a particle size of 10 to 100 angstroms placing the powder in a diamond mold defining the ultrasharp edge or point to be produced and applying a pressure of the order of 80 to 90 kb while heating the powder to a temperature of the order of 2440.degree. to 2500.degree. K in an ultrahigh vacuum or inert atmosphere after degasing to avoid oxidation of the diamond powder.

Abstract translation: Ultrasharp金刚石边缘和可用作切割仪器的点和用于发射电子，离子，x射线，相干和非相干光和高频电磁辐射的高强度点源通过制备和分级具有颗粒的超细金刚石粉末 尺寸为10至100埃，将粉末放置在限定超薄边缘或待生产点的金刚石模具中，并施加大约80至90Kb的压力，同时将粉末加热至2440℃至2500℃的温度 K在超高真空或惰性气氛中脱气以避免金刚石粉末的氧化。

公开(公告)号：US11875964B2

公开(公告)日：2024-01-16

申请号：US17366552

申请日：2021-07-02

Applicant: Physical Sciences, Inc.

Inventor： Jonathan D. Rameau ,  Nicholas R. Craig

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  B64G1/22 ,  C09D5/24 ,  C09D163/00

CPC classification number: H01J1/3044 ,  B64G1/226 ,  C09D5/24 ,  C09D163/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30411 ,  H01J2201/30457 ,  Y10S427/103

Abstract: A triple-point cathode coating and method wherein electrically conductive NEA diamond particles cast or mixed with the adhesive medium and electrically insulative NEA diamond particles are cast or mixed with the adhesive medium to form a plurality of exposed junctions between electrically conductive diamond particles and electrically insulative diamond particles to reduce any electrical charges on a structure coated with the coating.

公开(公告)号：US09418814B2

公开(公告)日：2016-08-16

申请号：US14594949

申请日：2015-01-12

Applicant: UChicago Argonne, LLC

Inventor： Anirudha V. Sumant ,  Sergey V. Baryshev ,  Sergey P. Antipov

IPC: C01B31/06 ,  H01J1/304 ,  H01J9/02 ,  H01J9/12 ,  H01J1/34

CPC classification number: H01J1/34 ,  H01J1/3048 ,  H01J9/025 ,  H01J9/12 ,  H01J2201/30457 ,  H01J2201/3423

Abstract: A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 1012 to about 1014 emitting sites per cm2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Abstract translation: 形成场致发射体的方法包括在衬底上设置第一层。 第一层用纳米金刚石颗粒接种。 其上设置有第一层的衬底在包括氮气的气体混合物中保持在第一温度和第一压力。 将第一层暴露于微波等离子体以在第一层上形成氮掺杂的超微晶金刚石膜，其具有在约0.05原子％至约0.5原子％范围内的氮的百分比。 场发射体每平方厘米具有约1012至约1014个发射点。 也可以类似地通过在类似于场发射体的衬底上形成氮掺杂的超微晶金刚石膜，然后氢终止膜而形成光电阴极。 光电阴极对近紫外光以及可见光有反应。

公开(公告)号：US09299526B2

公开(公告)日：2016-03-29

申请号：US14261680

申请日：2014-04-25

Applicant: UChicago Argonne, LLC

Inventor： Anirudha V. Sumant ,  Ralu Divan ,  Chrystian M. Posada ,  Carlos H. Castano ,  Edwin J. Grant ,  Hyoung K. Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01J35/06

CPC classification number: H01J1/304 ,  G21K1/025 ,  H01J3/021 ,  H01J9/025 ,  H01J35/065 ,  H01J35/14 ,  H01J2201/30457 ,  H01J2235/068

Abstract: A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube “forest” (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.

Abstract translation: 基于超纳米金刚石（UNCD）场发射体的源冷阴极场发射阵列（FEA）源。 该系统被构建为用于检测被遮蔽的物体和材料的替代物。 取决于给定情况的几何形状，平板源可用于层析成像，放射摄影或层析合成。 此外，该单元可以用作便携式电子或X射线扫描器或现有检测系统的组成部分。 UNCD场发射器显示出很大的场发射输出，并且可以沉积在大面积上，如碳纳米管“森林”（CNT）阴极的情况。 此外，与CNT提示相比，UNCD具有更好的机械和热性能，进一步延长了UNCD基于FEA的寿命。

公开(公告)号：US20150311023A1

公开(公告)日：2015-10-29

申请号：US14261680

申请日：2014-04-25

Applicant: UChicago Argonne, LLC

Inventor： Anirudha V. Samant ,  Ralu Divan ,  Chrystian M. Posada ,  Carlos H. Castano ,  Edwin J. Grant ,  Hyoung K. Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01J35/06

CPC classification number: H01J1/304 ,  G21K1/025 ,  H01J3/021 ,  H01J9/025 ,  H01J35/065 ,  H01J35/14 ,  H01J2201/30457 ,  H01J2235/068

Abstract: A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube “forest” (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.

Abstract translation: 基于超纳米金刚石（UNCD）场发射体的源冷阴极场发射阵列（FEA）源。 该系统被构建为用于检测被遮蔽的物体和材料的替代物。 取决于给定情况的几何形状，平板源可用于层析成像，放射摄影或层析合成。 此外，该单元可以用作便携式电子或X射线扫描器或现有检测系统的组成部分。 UNCD场发射器显示出很大的场发射输出，并且可以沉积在大面积上，如碳纳米管“森林”（CNT）阴极的情况。 此外，与CNT提示相比，UNCD具有更好的机械和热性能，进一步延长了UNCD基于FEA的寿命。

公开(公告)号：US20120032576A1

公开(公告)日：2012-02-09

申请号：US13204008

申请日：2011-08-05

Applicant: Roger Philips Shurter ,  David James Devlin ,  Nathan Andrew Moody ,  Jose Martin Taccetti ,  Steven John Russell

Inventor： Roger Philips Shurter ,  David James Devlin ,  Nathan Andrew Moody ,  Jose Martin Taccetti ,  Steven John Russell

IPC: H01J9/02

CPC classification number: H01J1/304 ,  H01J2201/30446 ,  H01J2201/30457 ,  H01J2201/30469

Abstract: An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

Abstract translation: 电子源包括具有用于将电源附接到后接触表面的装置的后接触表面。 电子源还包括包含与背接触表面直接接触的铂的层，嵌入铂中的与包含铂的层直接接触的单壁碳纳米管的复合层。 电子源还包括与复合层直接接触的纳米晶体金刚石层。 纳米晶金刚石层掺杂硼。 背部接触表面的一部分被去除以露出下面的铂。 电子源包含在可抽真空的容器中。

公开(公告)号：US08035291B2

公开(公告)日：2011-10-11

申请号：US12779583

申请日：2010-05-13

Applicant: Kazuhito Nishimura ,  Hideki Sasaoka

Inventor： Kazuhito Nishimura ,  Hideki Sasaoka

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J1/3048 ,  H01J2201/30457

Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5 nm to 10 nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.

Abstract translation: 在基板上形成具有X射线衍射中的金刚石图案和由多个粒径为5nm〜10nm的金刚石细晶粒形成的电子发射膜。 当电子发射膜导致发射电流流动时，电子发射膜可以将场强限制在低水平，并且具有均匀的电子发射特性。

公开(公告)号：US07898161B2

公开(公告)日：2011-03-01

申请号：US12095430

申请日：2007-06-27

Applicant: Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01J1/02

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26

Abstract: An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.

Abstract translation: 目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。 因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。 根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大 大于0.1 mm2。