PROCESS MODELING PLATFORM FOR SUBSTRATE MANUFACTURING SYSTEMS

    公开(公告)号:US20250155883A1

    公开(公告)日:2025-05-15

    申请号:US18939065

    申请日:2024-11-06

    Abstract: In one aspect of the present disclosure, a method includes obtaining, by a processing device, input data indicative of a first set of process parameters. The method further includes providing the input data to a first process model. The method further includes obtaining, from the first process model, first predictive output indicative of performance of a first process operation in accordance with the first set of process parameters. The method further includes providing the first predictive output to a second process model. The method further includes obtaining, from the second process model, second predictive output indicative of performance of a second process operation, different than the first process operation or a repetition of the first process operation, in accordance with the first set of process parameters. The method further includes performing a corrective action in view of the second predictive output.

    GENERATE 3D PHOTORESIST PROFILES USING DIGITAL LITHOGRAPHY

    公开(公告)号:US20250155797A1

    公开(公告)日:2025-05-15

    申请号:US18715317

    申请日:2021-12-16

    Abstract: Embodiments described herein provide for a system, a software application, and a method of a lithography process to form a three-dimensional profile in a single exposure operation. An image projections system of a lithography system will provide a plurality of shots to a photoresist layer. To form a three-dimensional profile in the photoresist layer, a local shot density of a plurality of shots within an exposure area will be varied. The local shot density will determine a dose provided by the image projection system at each sub-grid of an exposure area. The dose will determine the thickness of a photoresist layer when the plurality of shots are projected to the photoresist layer.

    Modular multi-directional gas mixing block

    公开(公告)号:US12297946B2

    公开(公告)日:2025-05-13

    申请号:US18181959

    申请日:2023-03-10

    Abstract: Exemplary modular gas blocks may include a body having inlet and outlet ends. The body may define a portion of a first gas path along a length of the body and may define a second gas path along a width of the body. The first gas path may include channel segments defined within the body. The inlet end may define a gas inlet that is coupled with the first gas path. The body may define first fluid ports that are coupled with the first gas path. A fluid port of the first fluid ports may be coupled with the gas inlet. The first fluid ports may be coupled with one another via a respective channel segment. An upper surface may define a lateral fluid port that is spaced apart from a first fluid port along the width and is coupled with the first fluid port via the second gas path.

    Composite Structures for Semiconductor Process Chambers

    公开(公告)号:US20250149305A1

    公开(公告)日:2025-05-08

    申请号:US18386721

    申请日:2023-11-03

    Abstract: A method for forming a part for a process chamber incorporates a substrate core in the part. The method may include performing a silicon carbide (SIC) deposition process on a substrate to form a SiC coating of approximately 1 mm to approximately 2 mm on all sides of the substrate to form a composite SiC structure where the substrate is composed of a stack of a plurality of substrates each with a thickness of approximately 1 mm to approximately 2 mm and separating the stack of the plurality of substrates of the composite SiC structure to form multiple composite structures where each multiple composite structure has an SiC coating on a top surface and on all side surfaces and a bottom surface of exposed substrate material.

    MULTI-FLOW GAS CIRCUITS, PROCESSING CHAMBERS, AND RELATED APPARATUS AND METHODS FOR SEMICONDUCTOR MANUFACTURING

    公开(公告)号:US20250146134A1

    公开(公告)日:2025-05-08

    申请号:US18500690

    申请日:2023-11-02

    Abstract: Embodiments of the present disclosure relate to multi-flow gas circuits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body, one or more heat sources, and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves are in fluid communication with a first set of inject passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with a second set of inject passages. The second set of inject passages and the first set of inject passages alternate with respect to each other along the plurality of flow levels.

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